In a series of ten chapters by leading experts, this volume reviews the well-established foundations as well as recent advances that define the current status of applied science and engineering in the field of hydrogenated silicon (Si:H) based thin film semiconductors. The field of amorphous and nanocrystalline Si:H (a-Si:H and nc-Si:H) has reached maturity with the seminal work having been published more than 40 years ago on the topics of plasma enhanced chemical vapor deposition (PEVCD) and sputtering, silicon-hydrogen bonding analysis, bandgap determination, doping, and transistor and solar cell fabrication. Tens of thousands of papers have been published since then that expand on this work and comprise the progress of the science and engineering in numerous aspects of the field. In fact, even today, progress continues to be made in materials fabrication and metrology, including analysis of structural, optical, electronic, and magnetic properties, as well as in device applications. As a result, students and newcomers to the field may find it daunting to accumulate and assimilate the vast literature and identify the state of the art in experimental fabrication and measurement techniques, data interpretation methodologies, and overall scientific understanding. The purpose of this text is to serve as a valuable resource for the knowledge base and to provide an up-to-date status for practitioners new to the field.

The following sections are included:

  • Introduction
  • Carrier Transport in a-Si:H
  • Recombination in a-Si:H
  • Stability in a-Si:H
  • References

Keywords[edit | edit source]

Solar cells ; Semiconductors ; Optoelectronic devices; amorphous silicon; photovoltaic

See also[edit | edit source]

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