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Abstract

Tco-zo.png

Novel aluminum and indium doped zinc oxide (ZnO) bilayer transparent conducting oxide thin films was fabricated by simple sol-gel spin coating method and post-annealed at 500 °C for an hour under nitrogen ambient towards solar cell applications. The structural, electrical and optical properties of both the as-deposited and annealed bilayer thin films were characterized. X-ray diffraction studies show hexagonal wurtzite-type structure of ZnO with (002) orientation, which enhanced with annealing. In atomic force microscopy studies, minimum surface roughness was attained for Al-doped ZnO (AZO)/In-doped ZnO (IZO) bilayer TCO film compared to IZO/AZO bilayer film. The AZO/IZO film sheet resistance improved to 0.057 M ohm/square after post-annealing, while the single layer AZO film sheet resistance degraded upon annealing in nitrogen atmosphere. All the films had an average transmittance in the visible region over 96%.

Highlights[edit | edit source]

  • Synthesis of novel TCO electrodes using simple sol-gel method.
  • Bilayer transparent conducting oxide based electrodes were prepared.
  • Electrical and optical properties were investigated towards solar cell applications.

Keywords[edit | edit source]

   Al doped ZnO (AZO); In doped ZnO (IZO); Sol-gel spin coating; electrical and optical properties; bilayer films

See also[edit | edit source]

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