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Type Paper
Cite as Citation reference for the source document. Sangeetha Periasamy, Sasirekha Venkidusamy, Ragavendran Venkatesan, Jeyanthinath Mayandi, Joshua Pearce, Josefine Helene Selj, Ramakrishnan Veerabahu. Micro-Raman Scattering of Nanoscale Silicon in Amorphous and Porous Silicon. Zeitschrift für Physikalische Chemie.231(9), pp. 1585-1598 (2017). DOI: https://doi.org/10.1515/zpch-2016-0961 open access

The size effect of nanoscale silicon in both amorphous and porous silicon was investigated with micro-Raman spectroscopy. Silicon nanostructures in amorphous silicon were deposited on quartz substrates by plasma enhanced chemical vapor deposition (PECVD) with deposition powers of 15, 30 and 50 W. Micro-Raman spectra of the nanostructured silicon show the T2g Raman active mode shifting from the 521 cm−1 crystalline Si Raman line to 494, 499 and 504 cm−1 as deposition power increased. Large Raman mode shifts, up to 27 cm−1 and broadening up to 23 cm−1 of the T2g Raman-active mode is attributed to a phonon confinement effect. The analysis of micro-Raman scattering data is useful to understand the role of deposition condition of the silicon sample. In addition, micro-Raman scattering intensity of porous silicon prepared using various current densities such as 10, 50 and 125 mA/cm2 has also been investigated. The effect of phonon confinement on the nanoscale porous silicon has been quantified. The relationship between Raman shift and stress on the porous silicon has been evaluated.

Keywords[edit | edit source]

amorphous silicon; micro-Raman; porous silicon; Raman shift and stress; scattering

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Authors Joshua M. Pearce
License CC-BY-SA-3.0
Language English (en)
Related 0 subpages, 4 pages link here
Impact 335 page views
Created March 30, 2017 by Joshua M. Pearce
Modified July 14, 2023 by StandardWikitext bot
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