Characterizing GaN:MOST
This page will detail the methods used to characterize gallium nitride (GaN) to be used as a substrate material for the electronics industry.
It will answer the following questions
What tools are used?
[edit | edit source]Installed apparatus in the MBE facility MOST
[edit | edit source]RHEED Gun
[edit | edit source]Perkin Elmer Model 06-190 10 keV HEED Gun, Perkin Elmer 20-330 RHEED Gun Control
CCD Camera/Crystal Monitor
[edit | edit source]K-Space (KSA) BP-M1 CCD Camera, KSA 300/400 Software
Gas Analyzer/Mass Spectrometer
[edit | edit source]Inficon Transpector TH100 F&M Quadrupole Residual Gas Analyzer, Transpector Ware V2.0 Software
Available Facilities in MTU
[edit | edit source]1)Field Emission Scanning Electron Microscopy 2)Transmission Electron Microscopy 3)Atomic Force Microscopy 4)X-Ray Diffraction Facility 5)Pumping Laser Photoluminescence System
How accurate do the tools need to be?
[edit | edit source]What is the best state-of-the-art GaN material?
[edit | edit source]| Authors | |
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| License | CC-BY-SA-3.0 |
| Cite as | Jrozario (2013–2025). "Characterizing GaN:MOST". Appropedia. Retrieved June 4, 2026. |