{"id":49174,"key":"Characterizing_GaN:MOST","title":"Characterizing GaN:MOST","latest":{"id":1205826,"timestamp":"2025-11-27T19:00:53Z"},"content_model":"wikitext","license":{"url":"https://www.appropedia.org/Appropedia:Copyrights","title":"CC-BY-SA-4.0"},"source":"{{MOST}}\n\nThis page will detail the methods used to characterize gallium nitride (GaN) to be used as a substrate material for the electronics industry.\n\nIt will answer the following questions\n\n== What tools are used? ==\n\n=== Installed apparatus in the MBE facility MOST ===\n\n==== RHEED Gun ====\n\nPerkin Elmer Model 06-190 10 keV HEED Gun, Perkin Elmer 20-330 RHEED Gun Control\n\n==== CCD Camera/Crystal Monitor ====\n\nK-Space (KSA) BP-M1 CCD Camera, KSA 300/400 Software\n\n==== Gas Analyzer/Mass Spectrometer ====\n\nInficon Transpector TH100 F&M Quadrupole Residual Gas Analyzer, Transpector Ware V2.0 Software\n\n=== Available Facilities in MTU ===\n\n1)Field Emission Scanning Electron Microscopy\n2)Transmission Electron Microscopy\n3)Atomic Force Microscopy\n4)X-Ray Diffraction Facility\n5)Pumping Laser Photoluminescence System\n\n== How accurate do the tools need to be? ==\n\n== What is the best state-of-the-art GaN material? ==\n\n{{Page data\n| license = CC-BY-SA-3.0\n}}\n\n[[Category:MOST methods]]"}