Characterizing GaN:MOST

This page will detail the methods used to characterize gallium nitride (GaN) to be used as a substrate material for the electronics industry.

It will answer the following questions

What tools are used?

Installed apparatus in the MBE facility MOST

RHEED Gun

Perkin Elmer Model 06-190 10 keV HEED Gun, Perkin Elmer 20-330 RHEED Gun Control

CCD Camera/Crystal Monitor

K-Space (KSA) BP-M1 CCD Camera, KSA 300/400 Software

Gas Analyzer/Mass Spectrometer

Inficon Transpector TH100 F&M Quadrupole Residual Gas Analyzer, Transpector Ware V2.0 Software

Available Facilities in MTU

1)Field Emission Scanning Electron Microscopy 2)Transmission Electron Microscopy 3)Atomic Force Microscopy 4)X-Ray Diffraction Facility 5)Pumping Laser Photoluminescence System

How accurate do the tools need to be?

What is the best state-of-the-art GaN material?

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Created	July 21, 2013 by Joshua M. Pearce
Last edit	November 27, 2025 by Maintenance script
Cite as	Jrozario (2013–2025). "Characterizing GaN:MOST". Appropedia. Retrieved October 3, 2026.
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