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= Controlled distance nanosphere lithography literature reviews = | = Controlled distance nanosphere lithography literature reviews = | ||
====[http://scitation.aip.org/content/aip/journal/apl/71/20/10.1063/1.120220<ref name="Haginoya">Haginoya, Chiseki, Masayoshi Ishibashi, and Kazuyuki Koike. “Nanostructure Array Fabrication with a Size-Controllable Natural Lithography.” Applied Physics Letters 71, no. 20 (1997): 2934. doi:10.1063/1.120220.</ref>]==== | ====[http://scitation.aip.org/content/aip/journal/apl/71/20/10.1063/1.120220 Nanostructure Array Fabrication with a Size-Controllable Natural Lithography<ref name="Haginoya">Haginoya, Chiseki, Masayoshi Ishibashi, and Kazuyuki Koike. “Nanostructure Array Fabrication with a Size-Controllable Natural Lithography.” Applied Physics Letters 71, no. 20 (1997): 2934. doi:10.1063/1.120220.</ref>]==== | ||
'''Abstract''': A simple technique for size-controllable nanostructure array formation has been developed, using self-assembled polystyrene beads whose diameters can be arbitrarily reduced by reactive ion etching. We have produced a hole array of 83 and 157 nm diameter with 200 nm pitch on Si substrate. This technique can find potential applications in many areas of science and technology. | '''Abstract''': A simple technique for size-controllable nanostructure array formation has been developed, using self-assembled polystyrene beads whose diameters can be arbitrarily reduced by reactive ion etching. We have produced a hole array of 83 and 157 nm diameter with 200 nm pitch on Si substrate. This technique can find potential applications in many areas of science and technology. | ||
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* ''the author summarized an empirical equation to show the diameter of the hole is in relation with the etching time of the beads, d = d<sub>0</sub>cos[arcsin(kt/2d<sub>0</sub>)], d is the diameter of the hole(equivalent to the diameter of the beads after etch), d<sub>0</sub> is the initial diameter of the beads, k is a constant, depending on etching conditions and t is the bead etching time.'' | * ''the author summarized an empirical equation to show the diameter of the hole is in relation with the etching time of the beads, d = d<sub>0</sub>cos[arcsin(kt/2d<sub>0</sub>)], d is the diameter of the hole(equivalent to the diameter of the beads after etch), d<sub>0</sub> is the initial diameter of the beads, k is a constant, depending on etching conditions and t is the bead etching time.'' | ||
* ''the authors said in summary that the hole diameter being tested falls in the range of 87nm to 157nm with a pitch depth of 200nm'' | * ''the authors said in summary that the hole diameter being tested falls in the range of 87nm to 157nm with a pitch depth of 200nm'' | ||
==References== | ==References== | ||
<references/> | <references/> | ||
Revision as of 17:15, 26 January 2014
This page is the literature review of large scale plasmonic cell fabrication and severs as part of my PhD project at Michigan Tech under supervision of Dr. Pearce.
Controlled distance nanosphere lithography literature reviews
Nanostructure Array Fabrication with a Size-Controllable Natural Lithography[1]
Abstract: A simple technique for size-controllable nanostructure array formation has been developed, using self-assembled polystyrene beads whose diameters can be arbitrarily reduced by reactive ion etching. We have produced a hole array of 83 and 157 nm diameter with 200 nm pitch on Si substrate. This technique can find potential applications in many areas of science and technology.
- X-ray, e-beam and ion beam have many advantages but they are large, expensive and not easy to handle; natural lithography which relies on small structure self-organization is a relative simple and inexpensive way for large scale manufactory.
- polystyrene beads size is controlled by subsequent RIE, the array pitch is determined by the size of the sphere thus also subjected to the etch of the beads. The experiment is conducted on Si(100) with polystyrene beads with initial size of 200nm
- obtain the polystyrene beads array: Si(100) wafer rinsed in acetone then ultrasonic for 1h, the cleaned wafer was preserved in pure water to keep a hydrophilic surface. To form the array, wafer was taken out from pure water and tilted and suspension of beads diluted pure water was dropped onto it, the substrate was kept still until all the water was evaporated
- styrene beads were attenuated by oxygen RIE, the silicon wafer was not affected because the etch rate for silicon in oxygen is much smaller than the rate of the beads.
- Masking(this process can also be used for some plasmonic metal masking): The Pt-Pd mask was deposited using sputtering for about 5nm in thickness, the polystyrene beads with Pt-Pd on top were removed by rubbing the surface with acetone-soaked cotton bud.
- Lithography: The sample was etched by RIE using a mixture of oxygen and carbon fluoride(CF4:O2=9:1), since Pt-Pd mask has a much higher resistance than Si does, the Si wafer is etched and an array of Si holes formed.
- Structure nonuniformity was found in the hole size, position and shape, ascribed to the initial nonuniform bead size, rate of RIE and the non uniformity of the self-organization, however, the overall array, seeing from the SEM images attached, is quite uniform and conformal.
- By changing the RIE time for the beads, different hole diameters were obtained, by changing the time of Si etching, the pitch depth can be adjusted.
- the author summarized an empirical equation to show the diameter of the hole is in relation with the etching time of the beads, d = d0cos[arcsin(kt/2d0)], d is the diameter of the hole(equivalent to the diameter of the beads after etch), d0 is the initial diameter of the beads, k is a constant, depending on etching conditions and t is the bead etching time.
- the authors said in summary that the hole diameter being tested falls in the range of 87nm to 157nm with a pitch depth of 200nm
References
- ↑ Haginoya, Chiseki, Masayoshi Ishibashi, and Kazuyuki Koike. “Nanostructure Array Fabrication with a Size-Controllable Natural Lithography.” Applied Physics Letters 71, no. 20 (1997): 2934. doi:10.1063/1.120220.