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Figures of Merit for GaN substrates

Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
eV
PL
3.44


Electron mobility
cm2/V s

150(300K)


Hole mobility
cm2/V s

13(300K)


Melting point
K
thermal couple
2573


Lattice constants
nm
X-ray diffraction
a=0.319;c=0.518


Thermal conductivity(300K)
W/cm K

2.2-2.5


Heat capacity
J/mol K

35.3


Elastic modulus
GPa

210


Dislocation density
/cm2

≤5 x 106


Sheet carrier density
/cm2

N/A


Sheet resistance/Resistivity
ohm-cm

0.1-1(Undoped)


<0.01(N type)

>106(Semi insulating)

Doping concentration
/cm3

~1019(N type)


N/A(P type)

Thickness
um
Ellipsometry
200-475(N type)


475(Semi insulating)

Misorientation
deg

On demand


Macro defect density
/cm2

A grade<=2; B grade>2


Bow
um

<5


Total thickness variation (TTV)
um

<10


Surface roughness
nm
Profilometer
Ra<0.2;RMS<0.5(epi ready)


Thermal expansion coeff(300K)
/K

along a0:5.59x10-6; along c0:7.75x10-6


Dielectric constant(300K)

Ellipsometry
along a0:10.4; along c0:9.5


Refractive index

Ellipsometry
2.67 at 3.38eV


Electron Effective mass


0.22


GaN template on sapphire Bandgap(300K)
eV
PL
3.44


Electron mobility
cm2/V s

150(300K)


Hole mobility
cm2/V s

13(300K)


Melting point
K
thermal couple
2573


Lattice constants
nm
X-ray diffraction
a=0.319;c=0.518


Thermal conductivity(300K)
W/cm K

2.3(semi insulating); 1.7(HVPE material,n=1x1017)


Heat capacity
J/mol K

35.3


Elastic modulus
GPa

210


Dislocation density
/cm2

≤1 x 108


Sheet carrier density
/cm2

N/A


Sheet resistance/Resistivity
ohm-cm

<0.05(Undoped)


<0.05(N type)

<1(P type)

>106(Semi insulating)

Doping concentration
/cm3

~1019(N type)


~1017(P type)

Thickness(epilayer)
um
Ellipsometry
3-100(N type,undoped)


5-100(P type)

20-90(Semi insulating)

Misorientation
deg

On demand


Macro defect density
/cm2

<10


Bow
um

10-500


Total thickness variation (TTV)
um

<10


Surface roughness
nm
Profilometer
Ra<0.2;RMS<0.5(epi ready)


Thermal expansion coeff(300K)
/K

along a0:5.59x10-6; along c0:7.75x10-6


Dielectric constant(300K)

Ellipsometry
along a0:10.4; along c0:9.5


Refractive index

Ellipsometry
2.67 at 3.38eV


Electron Effective mass


0.22


FWHM of(102)XRD arcsec

X-ray diffraction
<300


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