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==What tools are used?==
==What tools are used?==
===Installed apparatus in the MBE facility MTU===
====RHEED Gun====
Perkin Elmer Model 06-190 10 keV HEED Gun, Perkin Elmer 20-330 RHEED Gun Control
====CCD Camera/Crystal Monitor====
K-Space (KSA) BP-M1 CCD Camera, KSA 300/400 Software
====Gas Analyzer/Mass Spectrometer====
Inficon Transpector TH100 F&M Quadrupole Residual Gas Analyzer, Transpector Ware V2.0 Software
===Available External Facilities in MTU===
1)Field Emission Scanning Electron Microscopy
2)Transmission Electron Microscopy
3)Atomic Force Microscopy
4)Pumping Laser Photoluminescence System


==How accurate do the tools need to be?==
==How accurate do the tools need to be?==


==What is the best state-of-the-art GaN material?==
==What is the best state-of-the-art GaN material?==

Revision as of 20:27, 9 October 2013

This page will detail the methods used to characterize gallium nitride (GaN) to be used as a substrate material for the electronics industry.

It will answer the following questions

What tools are used?

Installed apparatus in the MBE facility MTU

RHEED Gun

Perkin Elmer Model 06-190 10 keV HEED Gun, Perkin Elmer 20-330 RHEED Gun Control

CCD Camera/Crystal Monitor

K-Space (KSA) BP-M1 CCD Camera, KSA 300/400 Software

Gas Analyzer/Mass Spectrometer

Inficon Transpector TH100 F&M Quadrupole Residual Gas Analyzer, Transpector Ware V2.0 Software

Available External Facilities in MTU

1)Field Emission Scanning Electron Microscopy 2)Transmission Electron Microscopy 3)Atomic Force Microscopy 4)Pumping Laser Photoluminescence System

How accurate do the tools need to be?

What is the best state-of-the-art GaN material?

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