Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. MOST uses ALD techniques to fabricate solar photovoltaic devices.
For more information on ALD http://web.archive.org/web/20190824065133/http://www.aldpulse.com:80/
MOST ALD[edit | edit source]
- Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform.
Other MTU researchers[edit | edit source]
- Dr. Kathryn A. Perrine http://chem.sites.mtu.edu/perrine/
MSDS[edit | edit source]
As received exposed to:
- http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p6283d.ashx
- http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4662e.ashx
- http://web.archive.org/web/20130823201705/http://www.praxair.com:80/~/media/North%20America/US/Documents/SDS/p4562i.ashx
- http://www.ozoneapplications.com/info/ozone_msds.htm
