Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. MOST uses ALD techniques to fabricate solar photovoltaic devices.

For more information on ALD http://web.archive.org/web/20190824065133/http://www.aldpulse.com:80/

MOST ALD[edit | edit source]

  • Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform.

Other MTU researchers[edit | edit source]

MSDS[edit | edit source]

As received exposed to:

See also[edit | edit source]

Page data
Published 2013
License CC-BY-SA-4.0
Impact Number of views to this page and its redirects. Updated once a month. Views by admins and bots are not counted. Multiple views during the same session are counted as one. 38
Issues Automatically detected page issues. Click on them to find out more. They may take some minutes to disappear after you fix them. No main image
Cookies help us deliver our services. By using our services, you agree to our use of cookies.