Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. MOST uses ALD techniques to fabricate solar photovoltaic devices.

For more information on ALD

MOST ALD[edit | edit source]

  • Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform.

Other MTU researchers[edit | edit source]

MSDS[edit | edit source]

As received exposed to:

See also[edit | edit source]

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Created May 7, 2013 by Joshua M. Pearce
Modified November 8, 2022 by Irene Delgado
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