InGaN solar cells literature review: Revision history

28 February 2024

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23 October 2023

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21 April 2023

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10 October 2022

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15 May 2022

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14 May 2022

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2 March 2022

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12 January 2022

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10 January 2022

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9 January 2022

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• curprev 16:2416:24, 9 January 2022‎ Irene92 talk contribs‎ 7,263 bytes −124,660‎ Replaced content with "{{Page data | part-of = Dirk McLaughlin Thesis, Queens Applied Sustainability Group Literature Reviews | keywords = Materials processing, Photovoltaics, ingan, sollar cell..." undo Tag: Replaced

23 August 2021

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27 May 2021

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10 May 2021

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30 March 2021

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31 January 2021

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13 January 2021

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17 November 2020

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14 November 2020

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24 February 2013

• curprev 01:2801:28, 24 February 2013‎ J.M.Pearce talk contribs‎ m 130,823 bytes +19‎ /* Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion D.V.P. McLaughlin & J.M. Pearce, "Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion", Metallurgical and Materials Transactio undo
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4 February 2013

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• curprev 01:1101:11, 4 February 2013‎ J.M.Pearce talk contribs‎ m 128,954 bytes 0‎ moved InGaN Solar Cells Literature Review to InGaN solar cells literature review: naming conv undo
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14 January 2013

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24 October 2011

• curprev 10:5210:52, 24 October 2011‎ Ankitvora talk contribs‎ 128,938 bytes −1,012‎ →‎Design and characterization of GaN-InGaN solar cells undo
• curprev 10:4910:49, 24 October 2011‎ Ankitvora talk contribs‎ 129,950 bytes −1,970‎ →‎Light-emitting diode extraction efficiency. Light-emitting diode extraction efficiency. M. Boroditsky, E. Yablonovitch. Final Report 1995 for MICRO Project 95-163; Industry Sponsor: Hewlett-Packard Laboratories. undo
• curprev 09:2209:22, 24 October 2011‎ Ankitvora talk contribs‎ 131,920 bytes −2,741‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo
• curprev 09:1909:19, 24 October 2011‎ Ankitvora talk contribs‎ 134,661 bytes −2,652‎ /* High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama. Applied Physics Letters, Vol 6 undo
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17 October 2011

• curprev 11:0911:09, 17 October 2011‎ Ankitvora talk contribs‎ 140,326 bytes +1,791‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo
• curprev 10:4310:43, 17 October 2011‎ Ankitvora talk contribs‎ 138,535 bytes −1‎ →‎InGaN and Light Emitting Diodes (LED) undo
• curprev 10:4310:43, 17 October 2011‎ Ankitvora talk contribs‎ 138,536 bytes +1,663‎ /* High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama. Applied Physics Letters, Vol 6 undo
• curprev 10:1010:10, 17 October 2011‎ Ankitvora talk contribs‎ 136,873 bytes +1,030‎ →‎Light-emitting diode extraction efficiency. Light-emitting diode extraction efficiency. M. Boroditsky, E. Yablonovitch. Final Report 1995 for MICRO Project 95-163; Industry Sponsor: Hewlett-Packard Laboratories. undo
• curprev 09:2809:28, 17 October 2011‎ Ankitvora talk contribs‎ 135,843 bytes +2,021‎ →‎Optical characterization of InxGa1-xN alloys undo
• curprev 09:1409:14, 17 October 2011‎ Ankitvora talk contribs‎ 133,822 bytes +305‎ →‎Optical characterization of InxGa1-xN alloys undo
• curprev 08:4008:40, 17 October 2011‎ Ankitvora talk contribs‎ 133,517 bytes +2,199‎ →‎Magnesium Doping of In-rich InGaN undo

7 October 2011

• curprev 17:5517:55, 7 October 2011‎ Ankitvora talk contribs‎ 131,318 bytes +794‎ →‎InGaN/GaN nanowire green light emitting diodes on (001) Si substrates undo
• curprev 17:4517:45, 7 October 2011‎ Ankitvora talk contribs‎ 130,524 bytes +969‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo
• curprev 17:1217:12, 7 October 2011‎ Ankitvora talk contribs‎ 129,555 bytes +1,250‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo

6 October 2011

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• curprev 07:0207:02, 6 October 2011‎ Ankitvora talk contribs‎ 128,819 bytes +447‎ →‎The Controlled growth of GaN nanowires. The controlled growth of GaN nanowires. S.D.Hersee, X. Sun, X. Wang. Nano Letters. Vol 6, No 8 (2006). undo
• curprev 06:4906:49, 6 October 2011‎ Ankitvora talk contribs‎ 128,372 bytes +468‎ →‎The Controlled growth of GaN nanowires. The controlled growth of GaN nanowires. S.D.Hersee, X. Sun, X. Wang. Nano Letters. Vol 6, No 8 (2006). undo
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• curprev 01:1501:15, 6 October 2011‎ Ankitvora talk contribs‎ 126,907 bytes +496‎ →‎The Controlled growth of GaN nanowires. The controlled growth of GaN nanowires. S.D.Hersee, X. Sun, X. Wang. Nano Letters. Vol 6, No 8 (2006). undo

4 October 2011

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30 September 2011

• curprev 12:2012:20, 30 September 2011‎ Ankitvora talk contribs‎ 126,919 bytes +1,097‎ /* Structural and optical properties of GaN nanocolumns grown on (0 0 0 1) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy. Structural and optical properties of GaN nanocolumns grown on (0 0 0 1) sapphire substrates by rf-plasma-ass undo
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27 September 2011

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25 September 2011

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23 September 2011

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8 September 2011

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25 August 2011

• curprev 16:2116:21, 25 August 2011‎ Ankitvora talk contribs‎ 124,609 bytes −3‎ →‎Light-emitting diode extraction efficiency. Light-emitting diode extraction efficiency. M. Boroditsky, E. Yablonovitch. Final Report 1995 for MICRO Project 95-163; Industry Sponsor: Hewlett-Packard Laboratories. undo

27 April 2011

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26 April 2011

• curprev 21:3721:37, 26 April 2011‎ D. McLaughlin talk contribs‎ m 124,522 bytes −1,038‎ →‎InGaN and Light Emitting Diodes (LED) undo
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24 April 2011

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• curprev 21:5621:56, 24 April 2011‎ D. McLaughlin talk contribs‎ m 125,625 bytes −1‎ →‎[http://dx.doi.org/10.1063/1.1358368 Compositional dependence of the strain-free optical band gap in In[sub x]Ga[sub 1−x]N layers] undo
• curprev 21:5421:54, 24 April 2011‎ D. McLaughlin talk contribs‎ m 125,626 bytes +936‎ →‎Optical Modelling of Thin Film Microstructures undo
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23 April 2011

• curprev 23:0023:00, 23 April 2011‎ D. McLaughlin talk contribs‎ m 113,091 bytes +5‎ →‎InGaN Material Characterization undo
• curprev 22:3122:31, 23 April 2011‎ D. McLaughlin talk contribs‎ m 113,086 bytes −3‎ →‎Band gaps and lattice parameters of 0.9 μm thick InxGa1-xN films for 0≤x≤0.140 undo
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• curprev 22:0922:09, 23 April 2011‎ D. McLaughlin talk contribs‎ m 110,530 bytes 0‎ →‎http://resolver.scholarsportal.info.proxy.queensu.ca/resolve/03701972/v241i0012/2802_foinwifbhvpe.xml Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy] undo
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