| Line 7: | Line 7: | ||
|- | |- | ||
! Bulk Type | ! Bulk Type | ||
! Property | ! Property | ||
! Units | ! Units | ||
| Line 15: | Line 14: | ||
! Reference/hyperlink | ! Reference/hyperlink | ||
|- | |- | ||
| rowspan=" | | rowspan="22"| GaN Freestanding Substrate | ||
| Bandgap<br /> | | Bandgap<br /> | ||
| eV<br /> | | eV<br /> | ||
| Line 76: | Line 74: | ||
| /cm<sup>2</sup><br /> | | /cm<sup>2</sup><br /> | ||
| <br /> | | <br /> | ||
| | | ≤5 x 10<sup>6</sup><br /> | ||
| <br /> | | <br /> | ||
| <br /> | | <br /> | ||
| Line 83: | Line 81: | ||
| /cm<sup>2</sup><br /> | | /cm<sup>2</sup><br /> | ||
| <br /> | | <br /> | ||
| | | NA<br /> | ||
| <br /> | | <br /> | ||
| <br /> | | <br /> | ||
|- | |- | ||
| Sheet resistance<br /> | | rowspan="3"|Sheet resistance/Resistivity<br /> | ||
| ohm-cm<br /> | | rowspan="3"|ohm-cm<br /> | ||
| rowspan="3"|<br /> | |||
| 0.1-1(Undoped)<br /> | |||
| <br /> | | <br /> | ||
| | | rowspan="3"|<br /> | ||
|- | |||
| <0.01(N type)<br /> | |||
| <br /> | | <br /> | ||
|- | |||
| >10<sup>6</sup>(Semi insulating)<br /> | |||
| <br /> | | <br /> | ||
|- | |- | ||
| Doping concentration<br /> | | rowspan="2"| Doping concentration<br /> | ||
| /cm<sup>3</sup><br /> | | rowspan="2"| /cm<sup>3</sup><br /> | ||
| <br /> | | rowspan="2"| <br /> | ||
| | | (N type)<br /> | ||
|<br /> | |||
| rowspan="2"| <br /> | |||
|- | |||
| (P type)<br /> | |||
| <br /> | | <br /> | ||
|- | |||
| rowspan="2"|Thickness<br /> | |||
| rowspan="2"|um<br /> | |||
| rowspan="2"|<br /> | |||
| (N type)<br /> | |||
| <br /> | | <br /> | ||
| rowspan="2"|<br /> | |||
|- | |- | ||
| | | (Semi insulating)<br /> | ||
| <br /> | | <br /> | ||
|- | |- | ||
| Line 118: | Line 128: | ||
| /cm<sup>2</sup><br /> | | /cm<sup>2</sup><br /> | ||
| <br /> | | <br /> | ||
| | | A grade<=2; B grade>2<br /> | ||
| <br /> | | <br /> | ||
| <br /> | | <br /> | ||
Revision as of 16:42, 11 October 2013
This Page is Under Construction
Figures of Merit for GaN substrates
| Bulk Type | Property | Units | Characterization Method | Industry range | Goal | Reference/hyperlink |
|---|---|---|---|---|---|---|
| GaN Freestanding Substrate | Bandgap |
eV |
PL |
3.44 |
||
| Electron mobility |
cm2/V s |
1350(300K) |
||||
| Hole mobility |
cm2/V s |
13(300K) |
||||
| Melting point |
K |
thermal couple |
2573 |
|||
| Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518 |
|||
| Thermal conductivity |
W/cm K |
2.1 |
||||
| Heat capacity |
J/mol K |
35.3 |
||||
| Elastic modulus |
GPa |
210 |
||||
| Dislocation density |
/cm2 |
≤5 x 106 |
||||
| Sheet carrier density |
/cm2 |
NA |
||||
| Sheet resistance/Resistivity |
ohm-cm |
0.1-1(Undoped) |
||||
| <0.01(N type) |
||||||
| >106(Semi insulating) |
||||||
| Doping concentration |
/cm3 |
(N type) |
||||
| (P type) |
||||||
| Thickness |
um |
(N type) |
||||
| (Semi insulating) |
||||||
| Misorientation |
deg |
210 |
||||
| Macro defect density |
/cm2 |
A grade<=2; B grade>2 |
||||
| Bow |
um |
210 |
||||
| Total thickness variation (TTV) |
um |
210 |
||||
| RMS roughness |
nm |
210 |