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==See also== | ==See also== | ||
* [[Atomic layer deposition literature review]] | * [[Atomic layer deposition literature review]] | ||
* [http://mcff.mtu.edu/mff/ MTU MFF] | |||
Revision as of 01:16, 7 May 2013
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. MOST uses ALD techniques to fabricate solar photovoltaic devices.
MOST ALD
- Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform.