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InGaN photovoltaics literature review: Revision history
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/* Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion D.V.P. McLaughlin & J.M. Pearce, "Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion", Metallurgical and Materials Transactio
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→This page describes selected literature available on InGaN photovoltaics.
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/* Substantial photo-response of InGaN p–i–n homojunction solar cellsS. W. Zeng, B. P. Zhang, J. W. Sun, J. F. Cai, C. Chen, and J. Z. Yu, “Substantial photo-response of InGaN p–i–n homojunction solar cells,” Semiconductor Science and Tec
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/* Temperature dependences of InxGa1−xN multiple quantum well solar cellsM.-J. Jeng, Y.-L. Lee, and L.-B. Chang, “Temperature dependences of InxGa1−xN multiple quantum well solar cells,” Journal of Physics D: Applied Physics, vol. 42, no. 10,
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/* Substantial photo-response of InGaN p–i–n homojunction solar cellsS. W. Zeng, B. P. Zhang, J. W. Sun, J. F. Cai, C. Chen, and J. Z. Yu, “Substantial photo-response of InGaN p–i–n homojunction solar cells,” Semiconductor Science and Tec
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/* Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cellsLai, K.Y. et al., 2010. Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells.
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→===[http://jap.aip.org/resource/1/japiau/v94/i10/p6477_s1 Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system<ref name
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/* The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devicesWierer, J.J., Fischer, A.J. & Koleske, D.D., 2010. The impact of piezoelectric polarization and nonradiative re
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/* Theoretical possibilities of InxGa1−xN tandem PV structures H. Hamzaoui, A. S. Bouazzi, and B. Rezig, “Theoretical possibilities of InxGa1−xN tandem PV structures,” Solar Energy Materials and Solar Cells, vol. 87, no. 1–4, pp. 595–603,
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→Photoconductivity in nanocrystalline GaN and amorphous GaON Koo, A. et al., 2006. Photoconductivity in nanocrystalline GaN and amorphous GaON. Journal of Applied Physics, 99, p.034312
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/* Growth, fabrication, and characterization of InGaN solar cellsX. Chen, K. D. Matthews, D. Hao, W. J. Schaff, and L. F. Eastman, “Growth, fabrication, and characterization of InGaN solar cells,” physica status solidi (a), vol. 205, no. 5, pp. 1
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→InGaN/GaN multiple quantum well concentrator solar cellsDahal, R. et al., 2010. InGaN/GaN multiple quantum well concentrator solar cells. Applied Physics Letters, 97, p.073115
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/* Growth of InGaN self-assembled quantum dots and their application to photodiodes Ji, L.W. et al., 2004. Growth of InGaN self-assembled quantum dots and their application to photodiodes. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, a
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→Growth, fabrication, and characterization of InGaN solar cellsChen, X. et al., 2008. Growth, fabrication, and characterization of InGaN solar cells. physica status solidi (a), 205(5), pp.1103-1105
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/* Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar CellsRay-Hua Horng, Shih-Ting Lin, Yu-Li Tsai, Mu-Tao Chu, Wen-Yih Liao, Ming-Hsien Wu, Ray-Ming Lin, and Yuan-Chieh Lu, “Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cel
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→Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar CellsRay-Hua Horng et al., 2009. Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells. IEEE Electron Device Letters, 30(7), pp.724-726
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/* High internal and external quantum efficiency InGaN/GaN solar cells E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and
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/* Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500 nm spectral rangeBerkman, E.A. et al., 2008. Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500 nm spectral range. Appli
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/* The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devicesWierer, J.J., Fischer, A.J. & Koleske, D.D., 2010. The impact of piezoelectric polarization and nonradiative re
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/* Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500 nm spectral rangeBerkman, E.A. et al., 2008. Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500 nm spectral range. Appli
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/* Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cellsLai, K.Y. et al., 2010. Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells.
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/* Temperature dependences of InxGa1−xN multiple quantum well solar cellsM.-J. Jeng, Y.-L. Lee, and L.-B. Chang, “Temperature dependences of InxGa1−xN multiple quantum well solar cells,” Journal of Physics D: Applied Physics, vol. 42, no. 10,
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/* Substantial photo-response of InGaN p–i–n homojunction solar cellsS. W. Zeng, B. P. Zhang, J. W. Sun, J. F. Cai, C. Chen, and J. Z. Yu, “Substantial photo-response of InGaN p–i–n homojunction solar cells,” Semiconductor Science and Tec
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/* Analytical model for the optical functions of indium gallium nitride with application to thin film solar photovoltaic cellsD. V. P. McLaughlin and J. M. Pearce, “Analytical model for the optical functions of indium gallium nitride with applicati
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/* Analytical model for the optical functions of indium gallium nitride with application to thin film solar photovoltaic cellsD. V. P. McLaughlin and J. M. Pearce, “Analytical model for the optical functions of indium gallium nitride with applicati
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→Nanowire Solar CellsE. C. Garnett, M. L. Brongersma, Y. Cui, and M. D. McGehee, “Nanowire Solar Cells,” Annual Review of Materials Research, vol. 41, no. 1, pp. 269-295, Aug. 2011
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→===[http://www.nature.com/nmat/journal/v8/n8/full/nmat2493.html Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates<ref name
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/* Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cellsLai, K.Y. et al., 2010. Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells.
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/* Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cellsLai, K.Y. et al., 2010. Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells.
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/* Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500 nm spectral rangeBerkman, E.A. et al., 2008. Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500 nm spectral range. Appli
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/* The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devicesWierer, J.J., Fischer, A.J. & Koleske, D.D., 2010. The impact of piezoelectric polarization and nonradiative re
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/* Growth of InGaN self-assembled quantum dots and their application to photodiodes Ji, L.W. et al., 2004. Growth of InGaN self-assembled quantum dots and their application to photodiodes. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, a
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