InGaN material characterization literature review: Revision history

14 April 2023

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15 May 2022

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13 January 2022

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18 October 2021

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10 May 2021

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18 March 2021

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3 March 2021

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4 February 2013

• curprev 01:3801:38, 4 February 2013‎ J.M.Pearce talk contribs‎ m 140,741 bytes −53‎ →‎This page describes selected literature available on InGaN Material Characterization. undo

14 January 2013

• curprev 01:3101:31, 14 January 2013‎ J.M.Pearce talk contribs‎ m 140,794 bytes +8‎ No edit summary undo

5 December 2012

• curprev 01:2001:20, 5 December 2012‎ Chenlong talk contribs‎ 140,786 bytes +1,106‎ →‎Optical and microstructural properties versus indium content in InxGa1−xN films grown by metal organic chemical vapor deposition undo
• curprev 00:4900:49, 5 December 2012‎ Chenlong talk contribs‎ 139,680 bytes +1,240‎ →‎Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys undo

30 November 2012

• curprev 03:5003:50, 30 November 2012‎ Chenlong talk contribs‎ 138,440 bytes +1,119‎ /* Investigation on the Correlation Between the Crystalline and Optical Properties of InGaN Using Near-Field Scanning Optical MicroscopyLin, T.Y. et al., 2007. Investigation on the Correlation Between the Crystalline and Optical Properties of InGaN U undo

29 November 2012

• curprev 23:3823:38, 29 November 2012‎ Chenlong talk contribs‎ 137,321 bytes +1,264‎ →‎InxGa1−xN refractive index calculations undo
• curprev 22:1322:13, 29 November 2012‎ Chenlong talk contribs‎ 136,057 bytes +1,134‎ →‎Luminescences from localized states in InGaN epilayers undo

17 October 2012

• curprev 00:1900:19, 17 October 2012‎ Chenlong talk contribs‎ 134,923 bytes +141‎ →‎Electrical and optical properties of p-type InGaNPantha, B.N. et al., 2009. Electrical and optical properties of p-type InGaN. Applied Physics Letters, 95(26), p.261904 undo

16 October 2012

• curprev 22:4622:46, 16 October 2012‎ Chenlong talk contribs‎ 134,782 bytes +14‎ /* Efficient radiative recombination from 〈11-22〉 -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth techniqueNishizuka, K. et al., 2004. Efficient radiative recombination from 〈112〉 -oriented InxGa1−xN multiple quantum undo
• curprev 22:4122:41, 16 October 2012‎ Chenlong talk contribs‎ 134,768 bytes +14‎ /* Efficient radiative recombination from 〈11-22〉 -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth techniqueNishizuka, K. et al., 2004. Efficient radiative recombination from 〈112〉 -oriented InxGa1−xN multiple quantum undo
• curprev 22:4022:40, 16 October 2012‎ Chenlong talk contribs‎ 134,754 bytes +1,536‎ /* Efficient radiative recombination from 〈11-22〉 -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth techniqueNishizuka, K. et al., 2004. Efficient radiative recombination from 〈112〉 -oriented InxGa1−xN multiple quantum undo

11 October 2012

• curprev 02:0802:08, 11 October 2012‎ Chenlong talk contribs‎ 133,218 bytes +13‎ /* Epitaxial growth and optical properties of semipolar (11-22) GaN and InGaN/GaN quantum wells on GaN bulk substratesUeda, M. et al., 2006. Epitaxial growth and optical properties of semipolar (112) GaN and InGaN/GaN quantum wells on GaN bulk substr undo
• curprev 02:0702:07, 11 October 2012‎ Chenlong talk contribs‎ 133,205 bytes +16‎ /* Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxyKurouchi, M. et al., 2005. Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy. Journal of Crystal Growt undo
• curprev 02:0302:03, 11 October 2012‎ Chenlong talk contribs‎ 133,189 bytes +749‎ /* Epitaxial growth and optical properties of semipolar (11-22) GaN and InGaN/GaN quantum wells on GaN bulk substratesUeda, M. et al., 2006. Epitaxial growth and optical properties of semipolar (112) GaN and InGaN/GaN quantum wells on GaN bulk substr undo
• curprev 01:2101:21, 11 October 2012‎ Chenlong talk contribs‎ 132,440 bytes +1,049‎ /* Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxyKurouchi, M. et al., 2005. Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy. Journal of Crystal Growt undo

4 October 2012

• curprev 19:1219:12, 4 October 2012‎ Chenlong talk contribs‎ 131,391 bytes +825‎ →‎Nitrogen supply rate dependence of InGaN growth properties, by RF-MBEKomaki, H. et al., 2007. Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE. Journal of Crystal Growth, 305(1), pp.12-18 undo
• curprev 02:1802:18, 4 October 2012‎ Chenlong talk contribs‎ 130,566 bytes +38‎ /* Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescenceLin, H.-C. et al., 1998. Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescence. Journal of Crystal Growth, 189-190(0), pp.57-60 undo
• curprev 02:1602:16, 4 October 2012‎ Chenlong talk contribs‎ 130,528 bytes +16‎ /* Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor depositionPantha, B.N. et al., 2008. Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor deposition. Applie undo
• curprev 02:1502:15, 4 October 2012‎ Chenlong talk contribs‎ 130,512 bytes +5‎ /* Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor depositionPantha, B.N. et al., 2008. Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor deposition. Applie undo
• curprev 02:1402:14, 4 October 2012‎ Chenlong talk contribs‎ 130,507 bytes +486‎ /* Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescenceLin, H.-C. et al., 1998. Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescence. Journal of Crystal Growth, 189-190(0), pp.57-60 undo
• curprev 01:3101:31, 4 October 2012‎ Chenlong talk contribs‎ 130,021 bytes +1,028‎ /* Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor depositionPantha, B.N. et al., 2008. Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor deposition. Applie undo

3 October 2012

• curprev 04:0004:00, 3 October 2012‎ Chenlong talk contribs‎ 128,993 bytes +1,418‎ /* Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {11-22} microfacetsNishizuka, K. et al., 2005. Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112} microfacets. App undo

19 September 2012

• curprev 19:3519:35, 19 September 2012‎ Chenlong talk contribs‎ 127,575 bytes +632‎ →‎Strain relaxation and quantum confinement in InGaN/GaN nanopostsChen, H.-S. et al., 2006. Strain relaxation and quantum confinement in InGaN/GaN nanoposts. Nanotechnology, 17(5), pp.1454-1458 undo
• curprev 17:2017:20, 19 September 2012‎ Chenlong talk contribs‎ 126,943 bytes +313‎ →‎===[http://www.sciencedirect.com/science/article/pii/S0022024808007161 The critical thickness of InGaN on (0 0 0 1)GaN<ref name undo
• curprev 16:1416:14, 19 September 2012‎ Chenlong talk contribs‎ 126,630 bytes +484‎ →‎===[http://apl.aip.org/resource/1/applab/v75/i18/p2776_s1 Determination of the critical layer thickness in the InGaN/GaN heterostructures<ref name undo
• curprev 03:4303:43, 19 September 2012‎ Chenlong talk contribs‎ 126,146 bytes +1,387‎ →‎===[http://www.sciencedirect.com/science/article/pii/S0022024810007803 Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy<ref name undo

18 September 2012

• curprev 02:1102:11, 18 September 2012‎ Chenlong talk contribs‎ 124,759 bytes +449‎ →‎===[http://iopscience.iop.org/0268-1242/21/7/003/ Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate<ref name undo

17 September 2012

• curprev 21:4421:44, 17 September 2012‎ 141.219.66.41 talk‎ 124,310 bytes +1,514‎ →‎===[http://iopscience.iop.org/0268-1242/21/7/003/ Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate<ref name undo Tag: n

13 September 2012

• curprev 19:2019:20, 13 September 2012‎ Chenlong talk contribs‎ 122,796 bytes +159‎ →‎===[http://www.sciencedirect.com/science/article/pii/S0039602807003020 Structural and optical properties of an InxGa1-xN/GaN nanostructure<ref name undo
• curprev 19:1819:18, 13 September 2012‎ Chenlong talk contribs‎ 122,637 bytes +70‎ →‎===[http://apl.aip.org/resource/1/applab/v73/i12/p1715_s1 Spectroscopic ellipsometry characterization of (InGa)N on GaN<ref name undo
• curprev 19:1719:17, 13 September 2012‎ Chenlong talk contribs‎ 122,567 bytes +90‎ →‎[http://apl.aip.org/resource/1/applab/v80/i25/p4741_s1 Small band gap bowing in In1-xGaxN alloysWu, J. et al., 2002. Small band gap bowing in In[sub 1-x]Ga[sub x]N alloys. Applied Physics Letters, 80, p.4741] undo
• curprev 19:1619:16, 13 September 2012‎ Chenlong talk contribs‎ 122,477 bytes +72‎ →‎===[http://apl.aip.org/resource/1/applab/v73/i14/p1994_s1 Optical band gap in Ga1-xInxN (0<x<0.2) on GaN by photoreflection spectroscopy<ref name undo
• curprev 19:1519:15, 13 September 2012‎ Chenlong talk contribs‎ 122,405 bytes +78‎ →‎Optical characterization of InxGa1-xN alloysGartner, M. et al., 2006. Optical characterization of InxGa1-xN alloys. Applied Surface Science, 253(1), pp.254-257 undo
• curprev 19:1319:13, 13 September 2012‎ Chenlong talk contribs‎ 122,327 bytes +70‎ →‎Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal GrowthKeating, S. et al., 2010. Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth. Crystal Growth & Design, 11(2), pp.565-568 undo

12 September 2012

• curprev 21:0321:03, 12 September 2012‎ 141.219.66.38 talk‎ 122,257 bytes +1,618‎ →‎===[http://www.sciencedirect.com/science/article/pii/S0039602807003020 Structural and optical properties of an InxGa1-xN/GaN nanostructure<ref name undo Tag: n
• curprev 17:4317:43, 12 September 2012‎ 141.219.66.38 talk‎ 120,639 bytes +278‎ →‎[http://apl.aip.org/resource/1/applab/v80/i25/p4741_s1 Small band gap bowing in In1-xGaxN alloysWu, J. et al., 2002. Small band gap bowing in In[sub 1-x]Ga[sub x]N alloys. Applied Physics Letters, 80, p.4741] undo Tag: n
• curprev 17:1817:18, 12 September 2012‎ 141.219.66.38 talk‎ 120,361 bytes +12‎ →‎[http://apl.aip.org/resource/1/applab/v80/i25/p4741_s1 Small band gap bowing in In1-xGaxN alloysWu, J. et al., 2002. Small band gap bowing in In[sub 1-x]Ga[sub x]N alloys. Applied Physics Letters, 80, p.4741] undo Tag: n

11 September 2012

• curprev 04:1804:18, 11 September 2012‎ 141.219.178.35 talk‎ 120,349 bytes +8‎ →‎===[http://apl.aip.org/resource/1/applab/v73/i14/p1994_s1 Optical band gap in Ga1-xInxN (0<x<0.2) on GaN by photoreflection spectroscopy<ref name undo Tag: n