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InGaN material characterization literature review: Revision history
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→This page describes selected literature available on InGaN Material Characterization.
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→Optical and microstructural properties versus indium content in InxGa1−xN films grown by metal organic chemical vapor deposition
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→Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys
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/* Investigation on the Correlation Between the Crystalline and Optical Properties of InGaN Using Near-Field Scanning Optical MicroscopyLin, T.Y. et al., 2007. Investigation on the Correlation Between the Crystalline and Optical Properties of InGaN U
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29 November 2012
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→InxGa1−xN refractive index calculations
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→Luminescences from localized states in InGaN epilayers
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00:19, 17 October 2012
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→Electrical and optical properties of p-type InGaNPantha, B.N. et al., 2009. Electrical and optical properties of p-type InGaN. Applied Physics Letters, 95(26), p.261904
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16 October 2012
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22:46, 16 October 2012
Chenlong
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/* Efficient radiative recombination from 〈11-22〉 -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth techniqueNishizuka, K. et al., 2004. Efficient radiative recombination from 〈112〉 -oriented InxGa1−xN multiple quantum
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/* Efficient radiative recombination from 〈11-22〉 -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth techniqueNishizuka, K. et al., 2004. Efficient radiative recombination from 〈112〉 -oriented InxGa1−xN multiple quantum
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Chenlong
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/* Efficient radiative recombination from 〈11-22〉 -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth techniqueNishizuka, K. et al., 2004. Efficient radiative recombination from 〈112〉 -oriented InxGa1−xN multiple quantum
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11 October 2012
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02:08, 11 October 2012
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/* Epitaxial growth and optical properties of semipolar (11-22) GaN and InGaN/GaN quantum wells on GaN bulk substratesUeda, M. et al., 2006. Epitaxial growth and optical properties of semipolar (112) GaN and InGaN/GaN quantum wells on GaN bulk substr
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02:07, 11 October 2012
Chenlong
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/* Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxyKurouchi, M. et al., 2005. Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy. Journal of Crystal Growt
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02:03, 11 October 2012
Chenlong
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/* Epitaxial growth and optical properties of semipolar (11-22) GaN and InGaN/GaN quantum wells on GaN bulk substratesUeda, M. et al., 2006. Epitaxial growth and optical properties of semipolar (112) GaN and InGaN/GaN quantum wells on GaN bulk substr
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01:21, 11 October 2012
Chenlong
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/* Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxyKurouchi, M. et al., 2005. Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy. Journal of Crystal Growt
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19:12, 4 October 2012
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→Nitrogen supply rate dependence of InGaN growth properties, by RF-MBEKomaki, H. et al., 2007. Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE. Journal of Crystal Growth, 305(1), pp.12-18
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02:18, 4 October 2012
Chenlong
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/* Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescenceLin, H.-C. et al., 1998. Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescence. Journal of Crystal Growth, 189-190(0), pp.57-60
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02:16, 4 October 2012
Chenlong
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/* Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor depositionPantha, B.N. et al., 2008. Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor deposition. Applie
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/* Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor depositionPantha, B.N. et al., 2008. Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor deposition. Applie
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/* Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescenceLin, H.-C. et al., 1998. Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescence. Journal of Crystal Growth, 189-190(0), pp.57-60
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Chenlong
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/* Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor depositionPantha, B.N. et al., 2008. Single phase InxGa1−xN 0.25 ≤ x ≤ 0.63 alloys synthesized by metal organic chemical vapor deposition. Applie
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/* Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {11-22} microfacetsNishizuka, K. et al., 2005. Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112} microfacets. App
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→Strain relaxation and quantum confinement in InGaN/GaN nanopostsChen, H.-S. et al., 2006. Strain relaxation and quantum confinement in InGaN/GaN nanoposts. Nanotechnology, 17(5), pp.1454-1458
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→===[http://www.sciencedirect.com/science/article/pii/S0022024808007161 The critical thickness of InGaN on (0 0 0 1)GaN<ref name
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→===[http://apl.aip.org/resource/1/applab/v75/i18/p2776_s1 Determination of the critical layer thickness in the InGaN/GaN heterostructures<ref name
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→===[http://www.sciencedirect.com/science/article/pii/S0022024810007803 Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy<ref name
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→===[http://iopscience.iop.org/0268-1242/21/7/003/ Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate<ref name
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→===[http://www.sciencedirect.com/science/article/pii/S0039602807003020 Structural and optical properties of an InxGa1-xN/GaN nanostructure<ref name
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→===[http://apl.aip.org/resource/1/applab/v73/i12/p1715_s1 Spectroscopic ellipsometry characterization of (InGa)N on GaN<ref name
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→[http://apl.aip.org/resource/1/applab/v80/i25/p4741_s1 Small band gap bowing in In1-xGaxN alloysWu, J. et al., 2002. Small band gap bowing in In[sub 1-x]Ga[sub x]N alloys. Applied Physics Letters, 80, p.4741]
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→===[http://apl.aip.org/resource/1/applab/v73/i14/p1994_s1 Optical band gap in Ga1-xInxN (0<x<0.2) on GaN by photoreflection spectroscopy<ref name
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→Optical characterization of InxGa1-xN alloysGartner, M. et al., 2006. Optical characterization of InxGa1-xN alloys. Applied Surface Science, 253(1), pp.254-257
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→Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal GrowthKeating, S. et al., 2010. Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth. Crystal Growth & Design, 11(2), pp.565-568
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→[http://apl.aip.org/resource/1/applab/v80/i25/p4741_s1 Small band gap bowing in In1-xGaxN alloysWu, J. et al., 2002. Small band gap bowing in In[sub 1-x]Ga[sub x]N alloys. Applied Physics Letters, 80, p.4741]
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