This page is a collaborative project in L3999 to probe the potential for 3-D printed scientific tools to be used in the cleanroom.

Micronova Cleanroom Finger[edit | edit source]

1[edit | edit source]

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2[edit | edit source]

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3[edit | edit source]

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4[edit | edit source]

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5[edit | edit source]

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6[edit | edit source]

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Finger 7[edit | edit source]

ISO level[edit | edit source]

  • 5

Processing equipment: Wet benches, oxidation furnaces[edit | edit source]

  • Wet Bench RCA 1, RCA 2
  • Oxidation furnaces

Most Common Chemicals used[edit | edit source]

  • RCA1: DI H2O, NH3 (25% solution), H2O2, temperature 80°C
  • RCA2: DI H2O, HCl (37% solution), H2O2, temperature 80°C
  • DI H2O
  • HF solution up to 5%

Requirements[edit | edit source]

  • RCA1 + RCA2 + HF dip is required before placing samples in oxidation furnaces

Finger 8[edit | edit source]

ISO level[edit | edit source]

  • 4

Processing equipment: Photoresist application tools[edit | edit source]

  • Prime Oven + HMDS
  • Spinner BLE
  • Oven 90°C
  • Mask aligner + UV exposure
  • Oven 120°C
  • Wet Bench: Development
  • Wet Bench: Oxide Etch

Most Common Chemicals used[edit | edit source]

  • HMDS primer
  • AZ5214E Photoresist
  • Acetone (in ultrasonic bath)
  • Acetone
  • Isopropanol
  • DI H2O

Finger 9[edit | edit source]

ISO level[edit | edit source]

  • 5

Processing equipment: ALD[edit | edit source]

  • ALD-1: Beneq TFS-500 (plasma capability)
  • ALD-2: Beneq TFS-500
  • ALD-3: Picosun SUNALE R-150B (plasma capability, primarily for nitride deposition)
Most Common Chemicals used[edit | edit source]
  • H2O
  • TMA
  • TiCl4
  • DEZn (ALD-1 only)
  • NH3
  • O2
  • O3
  • Carrier gas N2 or Ar (ALD-1 only)
Process conditions[edit | edit source]
  • Deposition temperature 20-450°C
  • Maximum wafer size < 200 mm. Possibility to coat samples with up to 15 mm thickness with a lifting ring for the reactor
  • Allowed materials: Si, GaN, InP, GaAs, polymers (SU-8, AZ-resists, PMMA), Al, Cr, Ge, Ti, glass
  • Forbidden materials: Noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Dc, Pb, Zn), silicones, other cleanroom incompatible materials
  • ALD-3: 80-500°C, max. 200 mm wafer. Only IC clean materials. Possibility to coat non-IC materials with a separate holder.

Processing equipment: ICP-RIE etcher[edit | edit source]

  • ICP-RIE: Oxford Plasmalab 100

Inductively coupled plasma etcher for etching silicon, compound semiconductors and polymers.

Most Common Chemicals used[edit | edit source]
  • BCl3
  • Cl2
  • SiCl4
  • SF6
  • H2
  • O2/N2/Ar
Process conditions[edit | edit source]
  • ICP source 2kW, CCP source 300W
  • Temperature range: -150°C to +400°C
  • Si etch rate 2-3 um/min
  • 100 mm Si wafer
  • Allowed materials: Si, GaN, GaAs, photoresists, Al, Cr, Ge, Ti
  • Forbidden materials: Glass, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Dc, Pb, Zn), silicones

10[edit | edit source]

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11[edit | edit source]

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12[edit | edit source]

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13[edit | edit source]

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Commercial 3-D Printing Filaments[edit | edit source]

Look here first:

Tests for Clean Room Compatibility[edit | edit source]

  • Determination of particulate generation
  • Determination of acceptability in chemical processing

Filament type, print temp, off gas, chemical compatibility[edit | edit source]

You can get outgassing information for TML/CVCM/WVR at https://outgassing.nasa.gov/


  • Total Mass Loss (TML) : The mass loss of the sample, determined from the weights before and after the 398 K exposure, expressed as a percentage. To select a sample with low outgassing, search for TML <= 1.0 percent.
  • Collected Volatile Condensable Material (CVCM): The difference between the weight of a clean collector and of the collector having condensed materials will provide the mass of condensables To select a sample with low outgassing, search for CVCM <= 0.10 percent.
  • Water Vapor Regained (WVR): This value is obtained as a percentage of the starting mass is that amount of water readsorbed/reabsorbed in 24 hours while the sample is exposed to 25° C, and 50-percent relative humidity. This determination is made after the vacuum test is completed and the values for TML and CVCM have been determined.


Low outgassing: Materials having a TML of 1.0 % or Less and a CVCM of 0.10 % or Less		
Low outgassing adhesives: http://web.archive.org/web/20090131151000/http://outgassing.nasa.gov:80/cgi/uncgi/sectionc/sectionc.sh		
Low outgassing tapes: http://web.archive.org/web/20090131151000/http://outgassing.nasa.gov:80/cgi/uncgi/sectionc/sectionc.sh		
Grease: vacuum grease (same as used in the microfab)		

You can get chemical resistance from: http://www.plasticsintl.com/plastics_chemical_resistence_chart.html

Legend:

A = No Attack, possibly slight absorption. Negligible effect on mechanical properties.
B = Slight attack by absorption. Some swelling and a small reduction in mechanical likely.
C = Moderate attack of appreciable absorption. Material will have limited life.
D = Material will decompose or dissolve in a short.

Aq. = Aqueous Solution CONC = Concentrated Aqueous Solution SAT = Saturated Aqueous Solution

  • = No data available

Where Aqueous Solutions are Shown the concentration as a weight % is given.

Start your list of 3-D printing filaments here -- for any other information not taken from the sources above include your source in a single set of square brackts [].

  1. PLA, 185-205C, 0.56%TML 0.01 %CVCM 0.33%WVR, no chemical data other than MOST internal
FA info icon.svg Angle down icon.svg Page data
Authors Ismo T.S. Heikkinen
License CC-BY-SA-3.0
Language English (en)
Related 0 subpages, 2 pages link here
Impact 293 page views
Created September 21, 2017 by Joshua M. Pearce
Modified June 13, 2023 by StandardWikitext bot
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