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Figure 3 shows the detailed structure of a GaInP (1.8 eV) / GaInAs (1.4 eV) / Ge (0.67 eV) triple-junction solar cell. In this design a wide band gap (transparent) window layer is used to lower a cell's series resistance. It does so by enhancing the lateral flow of photogenerated electrons trying to reach an electrical contact or '''tunnel junction''' (see Tunnel Junctions). A buffer layer is also used between the bottom and middle layers to reduce lattice mismatch effects (see Lattice Constant Matching). | Figure 3 shows the detailed structure of a GaInP (1.8 eV) / GaInAs (1.4 eV) / Ge (0.67 eV) triple-junction solar cell. In this design a wide band gap (transparent) window layer is used to lower a cell's series resistance. It does so by enhancing the lateral flow of photogenerated electrons trying to reach an electrical contact or '''tunnel junction''' (see Tunnel Junctions). A buffer layer is also used between the bottom and middle layers to reduce lattice mismatch effects (see Lattice Constant Matching). | ||
[[File:MJcellj.png|center|thumb|Figure 3: Structure of triplet solar cell | [[File:MJcellj.png|center|thumb|Figure 3: Structure of triplet solar cell]] | ||
=== Fabrication === | === Fabrication === |