Line 11: | Line 11: | ||
! Reference/hyperlink | ! Reference/hyperlink | ||
|- | |- | ||
| rowspan=" | | rowspan="29"| GaN freestanding substrate | ||
| Bandgap(300K)<br /> | | Bandgap(300K)<br /> | ||
| eV<br /> | | eV<br /> | ||
Line 50: | Line 50: | ||
| W/cm K<br /> | | W/cm K<br /> | ||
| Time-domain thermoreflectance<br /> | | Time-domain thermoreflectance<br /> | ||
| 2.0-2.4[1]<br /> | | 2.0-2.4[1]<br />2.5[2] | ||
| <br /> | | <br /> | ||
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br /> | | (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br />(2)[http://www.kymatech.com/products/bulk-products/c-plane-bulk-gan-substrates/bulk-gan-c-plane-detail Kyma Technology] | ||
|- | |- | ||
| Heat capacity<br /> | | Heat capacity<br /> | ||
Line 71: | Line 71: | ||
| /cm<sup>2</sup><br /> | | /cm<sup>2</sup><br /> | ||
| TEM and XRD<br /> | | TEM and XRD<br /> | ||
| ~5x10<sup>4</sup>[1]<br/>≤5 x 10<sup>6</sup>[2,4,5,6,7]<br />1x10<sup>7</sup>-4x10<sup>7</sup>[3]<br/><10<sup>5</sup>[8] | | ~5x10<sup>4</sup>[1]<br/>≤5 x 10<sup>6</sup>[2,4,5,6,7,9,10]<br />1x10<sup>7</sup>-4x10<sup>7</sup>[3]<br/><10<sup>5</sup>[8]<br/>10<sup>4</sup>-5x10<sup>6</sup>[11] | ||
| <br /> | | <br /> | ||
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(5)[http://www.galliumnitrides.com/N-Type-GaN.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(6)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(8)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.] | | (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(5)[http://www.galliumnitrides.com/N-Type-GaN.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(6)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(8)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]<br/>(9)[http://www.rflambda.com/pdf/gantemplates/RFGB.CP.N.B.10.pdf RF-Lambda USA LLC]<br/>(10)[http://www.atecom.com.tw/product-info.php?id=31 Atecom Technology Co., Ltd]<br/>(11)[http://www.kymatech.com/products/bulk-products/c-plane-bulk-gan-substrates/bulk-gan-c-plane-detail Kyma Technology] | ||
|- | |- | ||
| Sheet carrier density<br /> | | Sheet carrier density<br /> | ||
Line 85: | Line 85: | ||
| rowspan="4"|ohm-cm<br /> | | rowspan="4"|ohm-cm<br /> | ||
| rowspan="4"|<br /> | | rowspan="4"|<br /> | ||
| 0.1-1(Undoped)[3]<br /> | | 0.1-1(Undoped)[3]<br /><5(undoped)[14] | ||
| <br /> | | <br /> | ||
| rowspan="4"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials](5)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(6)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(8)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(9)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.] | | rowspan="4"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials](5)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(6)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(8)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(9)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]<br/>(10)[http://www.rflambda.com/pdf/gantemplates/RFGB.CP.N.B.10.pdf RF-Lambda USA LLC]<br/>(11)[http://www.rflambda.com/pdf/gantemplates/RFGB.CP.SEMI.B.10.pdf RF-Lambda USA LLC](12)[http://www.atecom.com.tw/product-info.php?id=31 Atecom Technology Co., Ltd]<br/>(13)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Substrates%20(N+).pdf Kyma Technology]<br/>(14)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Substrates%20(N-).pdf Kyma Tech.]<br/>[15][http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Substrates%20(SE).pdf Kyma Tech.] | ||
|- | |- | ||
| 10<sup>-3</sup>-10<sup>-2</sup>(N type)[1,9]<br/><0.01(N type)[3]<br /><0.03(N type)[4]<br/><0.05(N type)[5]<br/><0.5(N type)[6,7] | | 10<sup>-3</sup>-10<sup>-2</sup>(N type)[1,9]<br/><0.01(N type)[3]<br /><0.03(N type)[4]<br/><0.05(N type)[5]<br/><0.5(N type)[6,7,10,12]<br/><0.02(N type)[13] | ||
| <br /> | | <br /> | ||
|- | |- | ||
| 10<sup>9</sup>-10<sup>12</sup>[2,9]<br/>>10<sup>6</sup>(Semi insulating)[3,5,6,8]<br /> | | 10<sup>9</sup>-10<sup>12</sup>[2,9,11]<br/>>10<sup>6</sup>(Semi insulating)[3,5,6,8,12,15]<br /> | ||
| <br /> | | <br /> | ||
|- | |- | ||
| 10<sup>2</sup>-10<sup>3</sup>[9]<br/> | | 10<sup>2</sup>-10<sup>3</sup>(P type)[9]<br/> | ||
| <br/> | | <br/> | ||
|- | |- | ||
Line 101: | Line 101: | ||
| rowspan="2"| /cm<sup>3</sup><br /> | | rowspan="2"| /cm<sup>3</sup><br /> | ||
| rowspan="2"| SIMS<br /> | | rowspan="2"| SIMS<br /> | ||
| ~10<sup>19</sup>(N type)[1,4]<br />3x10<sup>17</sup>(N type)[2]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[3] | | ~10<sup>19</sup>(N type)[1,4]<br />3x10<sup>17</sup>(N type)[2]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[3]<br/>10<sup>18</sup>(N type)[5]<br/><2x10<sup>17</sup>(N type)[6] | ||
|<br /> | |<br /> | ||
| rowspan="2"| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(4)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.] | | rowspan="2"| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(4)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/RFGB.CP.N.B.10.pdf RF-Lambda USA LLC]<br/>(6)[http://www.rflambda.com/pdf/gantemplates/RFGB.CP.UD.B.30.pdf RF-Lambda USA LLC] | ||
|- | |- | ||
| 10<sup>18</sup>(P type)<br /> | | 10<sup>18</sup>(P type)<br /> | ||
Line 111: | Line 111: | ||
| rowspan="2"|um<br /> | | rowspan="2"|um<br /> | ||
| rowspan="2"|Ellipsometry<br /> | | rowspan="2"|Ellipsometry<br /> | ||
| 300-400(N type)[1,4]<br/>475[3]<br/>200-475(N type)<br />230-280[4]<br/>260[5]<br/>475[6]<br/>>300[9] | | 300-400(N type)[1,4]<br/>475[3]<br/>200-475(N type)<br />230-280(N type)[4]<br/>260(N type)[5]<br/>475(N type)[6,11]<br/>>300(N type)[9]<br/>430(N type)[9]<br/>260(N type)[10] | ||
| <br /> | | <br/> | ||
| rowspan="2"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(5)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(6)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(8)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.] | | rowspan="2"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(5)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(6)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(8)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]<br/>(9)[http://www.rflambda.com/pdf/gantemplates/RFGB.CP.N.B.10.pdf RF-Lambda USA LLC]<br/>(10)[http://www.atecom.com.tw/product-info.php?id=31 Atecom Technology Co., Ltd]<br/>(11)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Substrates%20(N+).pdf Kyma Technology] | ||
|- | |- | ||
| >300[2,9]<br/>475(Semi insulating)[3,7]<br />230-280[4]<br/>260[5] | | >300[2,9]<br/>475(Semi insulating)[3,7]<br />230-280(Semi insulating)[4]<br/>260(Semi insulating)[5]<br/>~260(Semi insulating)[10] | ||
| <br /> | | <br /> | ||
|- | |- | ||
Line 128: | Line 128: | ||
| /cm<sup>2</sup><br /> | | /cm<sup>2</sup><br /> | ||
| TEM and XRD<br /> | | TEM and XRD<br /> | ||
| <5[1,3]<br/>A grade<=2; B grade>2[2]<br /> | | <5[1,3,6]<br/>A grade<=2; B grade>2[2]<br/><10[4]<br/>A grade<=3;B grade>3[5] | ||
| <br/> | | <br/> | ||
| (1)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(2)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(3)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.] | | (1)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(2)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(3)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(4)[http://www.rflambda.com/pdf/gantemplates/RFGB.CP.N.B.10.pdf RF-Lambda USA LLC]<br/>(5)[http://www.atecom.com.tw/product-info.php?id=31 Atecom Technology Co., Ltd]<br/>(6)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Substrates%20(N+).pdf Kyma Technology] | ||
|- | |- | ||
| Bow<br /> | | Bow<br /> | ||
| um<br /> | | um<br /> | ||
| SEM or AFM<br /> | | SEM or AFM<br /> | ||
| <10[1,5]<br/><20[2,3]<br/><5[4]<br /> | | <10[1,5]<br/><20[2,3]<br/><5[4]<br/>5-50[6,8]<br/><30[7] | ||
| <br/> | | <br/> | ||
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(4)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(5)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.] | | (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(4)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(5)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]<br/>(6)[http://www.rflambda.com/product_list.jsp?catalog=9090 RF-Lambda USA LLC]<br/>(7)[http://www.atecom.com.tw/product-info.php?id=31 Atecom Technology Co., Ltd]<br/>(8)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Substrates%20(N+).pdf Kyma Technology] | ||
|- | |- | ||
| Total thickness variation (TTV)<br /> | | Total thickness variation (TTV)<br /> | ||
| um<br /> | | um<br /> | ||
| AFM(preferred) and SEM<br /> | | AFM(preferred) and SEM<br /> | ||
| <40[1,6],~20[2]<br/><15[3,4]<br /><10[5]<br /> | | <40[1,6],~20[2]<br/><15[3,4]<br/><10[5]<br/>5-25[7]<br/><20[8]<br/>10-50[9] | ||
| <br /> | | <br /> | ||
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(5)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(6)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.] | | (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(5)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(6)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]<br/>(7)[http://www.rflambda.com/product_list.jsp?catalog=9090 RF-Lambda USA LLC]<br/>(8)[http://www.atecom.com.tw/product-info.php?id=31 Atecom Technology Co., Ltd]<br/>(9)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Substrates%20(N+).pdf Kyma Technology] | ||
|- | |- | ||
| Surface roughness<br /> | | Surface roughness<br /> | ||
| nm<br /> | | nm<br /> | ||
| Profilometer and AFM<br /> | | Profilometer and AFM<br /> | ||
| Ra<0.2[1,2] | | Ra<0.2[1,2]<br/>RMS<0.5(epi ready)[3,4,5,7]<br /><br/>Ra<0.3[6] | ||
| <br /> | | <br /> | ||
| (1)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br />(2)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(3)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(4)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.] | | (1)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br />(2)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(3)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(4)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]<br/>(5)[http://www.rflambda.com/product_list.jsp?catalog=9090 RF-Lambda USA LLC]<br/>(6)[http://www.atecom.com.tw/product-info.php?id=31 Atecom Technology Co., Ltd]<br/>(7)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Substrates%20(N+).pdf Kyma Technology] | ||
|- | |- | ||
| Thermal expansion coeff(300K)<br /> | | Thermal expansion coeff(300K)<br /> | ||
Line 184: | Line 184: | ||
| arcsec<br /> | | arcsec<br /> | ||
| X-ray diffraction<br /> | | X-ray diffraction<br /> | ||
| ~20[1]<br /> | | ~20[1,2]<br /> | ||
| <br /> | |||
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.] | |||
|- | |||
| FWHM of (102) XRD arcsec<br /> | |||
| <br /> | |||
| X-ray diffraction<br /> | |||
| <300<br /> | |||
| <br /> | | <br /> | ||
| (1)[http:// | | (1)[http://www.rflambda.com/product_list.jsp?catalog=9090 RF-Lambda USA LLC]<br/> | ||
|- | |- | ||
| rowspan="32"| GaN template on sapphire | | rowspan="32"| GaN template on sapphire | ||
Line 227: | Line 234: | ||
| W/cm K<br /> | | W/cm K<br /> | ||
| Time-domain thermoreflectance<br /> | | Time-domain thermoreflectance<br /> | ||
| 2.3(semi insulating)[1]; 1.7(HVPE material,n=1x10<sup>17</sup>)[1]<br /> | | 2.3(semi insulating)[1]; 1.7(HVPE material,n=1x10<sup>17</sup>)[1]<br />1.2[2] | ||
| <br /> | | <br /> | ||
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br /> | | (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br />(2)[http://www.kymatech.com/products/bulk-products/c-plane-bulk-gan-substrates/bulk-gan-c-plane-detail Kyma Technology] | ||
|- | |- | ||
| Heat capacity<br /> | | Heat capacity<br /> | ||
Line 248: | Line 255: | ||
| /cm<sup>2</sup><br /> | | /cm<sup>2</sup><br /> | ||
| TEM and XRD<br /> | | TEM and XRD<br /> | ||
| ≤1 x 10<sup>8</sup>[1,2,5,7]<br/>5 x 10<sup>8</sup>-6 x 10<sup>8</sup>(for N type and undoped)[3]<br />8 x 10<sup>8</sup>(for semi insulating)[3]<br/>8 x 10<sup>7</sup>-9 x 10<sup>7</sup>(for N type and undoped)[4]<br/>5 x 10<sup>8</sup>-3 x 10<sup>7</sup>(for N type,Semi insulating and undoped)[6] | | ≤1 x 10<sup>8</sup>[1,2,5,7]<br/>5 x 10<sup>8</sup>-6 x 10<sup>8</sup>(for N type and undoped)[3]<br />8 x 10<sup>8</sup>(for semi insulating)[3]<br/>8 x 10<sup>7</sup>-9 x 10<sup>7</sup>(for N type and undoped)[4]<br/>5 x 10<sup>8</sup>-3 x 10<sup>7</sup>(for N type,Semi insulating and undoped)[6]<br/>5 x 10<sup>9</sup>[8] | ||
| <br /> | | <br /> | ||
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-ULD-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(5)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(6)[http://www.rflambda.com/product_list.jsp?catalog=9081 RF-Lambda USA LLC]<br/>(7)[http://www.atecom.com.tw/product-info.php?id=32 Atecom Technology Co., Ltd.] | | (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-ULD-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(5)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(6)[http://www.rflambda.com/product_list.jsp?catalog=9081 RF-Lambda USA LLC]<br/>(7)[http://www.atecom.com.tw/product-info.php?id=32 Atecom Technology Co., Ltd.]<br/>(8)[http://www.kymatech.com/products/bulk-products/c-plane-bulk-gan-substrates/bulk-gan-c-plane-detail Kyma Technology] | ||
|- | |- | ||
| Sheet carrier density<br /> | | Sheet carrier density<br /> |
Revision as of 04:20, 14 October 2013
Figures of Merit for GaN substrates
Bulk Type | Property | Units | Characterization Method | Industry range | Goal | Reference/hyperlink |
---|---|---|---|---|---|---|
GaN freestanding substrate | Bandgap(300K) |
eV |
PL |
3.44[1,2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | |
Electron mobility(300K) |
cm2/V s |
Hall effect sensor |
~150[1,5],~250[2] 1350[4] 150(for n=1019)[3] 240(for n=1018)[3] 500(for n=1017)[3] |
(1)Ammono S. A. (2)Ammono S. A. (3)Xiamen Powerway Advanced Material Co. Ltd. (4)http://www.springer.com/materials/book/978-3-642-04828-9 (5)The Roditi International Corp. Ltd. | ||
Hole mobility(300K) |
cm2/V s |
Hall effect sensor |
13[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Melting point |
K |
Thermal couple |
2573[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518[1] a=0.3189;c=0.5185[2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | ||
Thermal conductivity(300K) |
W/cm K |
Time-domain thermoreflectance |
2.0-2.4[1] 2.5[2] |
(1)Xiamen Powerway Advanced Material Co. Ltd. (2)Kyma Technology | ||
Heat capacity |
J/mol K |
Constant presure heating |
35.3[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Elastic modulus |
GPa |
Mechanical measurement |
210[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Dislocation density |
/cm2 |
TEM and XRD |
~5x104[1] ≤5 x 106[2,4,5,6,7,9,10] 1x107-4x107[3] <105[8] 104-5x106[11] |
(1)Ammono S. A. (2)Lux Material Co., Ltd. (3)Saint-Gobain Crystals - Photonic Materials (4)Precision Micro-Optics LLC (5)Xiamen Powerway Advanced Material Co. Ltd. (6)MTI Corp. (7)MTI Corp. (8)The Roditi International Corp. Ltd. (9)RF-Lambda USA LLC (10)Atecom Technology Co., Ltd (11)Kyma Technology | ||
Sheet carrier density |
/cm2 |
SIMS |
N/A |
|||
Sheet resistance/Resistivity |
ohm-cm |
0.1-1(Undoped)[3] <5(undoped)[14] |
(1)Ammono S. A. (2)Ammono S. A. (3)Lux Material Co., Ltd. (4)Saint-Gobain Crystals - Photonic Materials(5)Precision Micro-Optics LLC (6)Xiamen Powerway Advanced Material Co. Ltd. (7)MTI Corp. (8)MTI Corp. (9)The Roditi International Corp. Ltd. (10)RF-Lambda USA LLC (11)RF-Lambda USA LLC(12)Atecom Technology Co., Ltd (13)Kyma Technology (14)Kyma Tech. [15]Kyma Tech. | |||
10-3-10-2(N type)[1,9] <0.01(N type)[3] <0.03(N type)[4] <0.05(N type)[5] <0.5(N type)[6,7,10,12] <0.02(N type)[13] |
||||||
109-1012[2,9,11] >106(Semi insulating)[3,5,6,8,12,15] |
||||||
102-103(P type)[9] |
||||||
Carrier concentration |
/cm3 |
SIMS |
~1019(N type)[1,4] 3x1017(N type)[2] 1x1018-3x1018(N type)[3] 1018(N type)[5] <2x1017(N type)[6] |
(1)Ammono S. A. (2)Ammono S. A. (3)Saint-Gobain Crystals - Photonic Materials (4)The Roditi International Corp. Ltd. (5)RF-Lambda USA LLC (6)RF-Lambda USA LLC | ||
1018(P type) |
||||||
Thickness |
um |
Ellipsometry |
300-400(N type)[1,4] 475[3] 200-475(N type) 230-280(N type)[4] 260(N type)[5] 475(N type)[6,11] >300(N type)[9] 430(N type)[9] 260(N type)[10] |
(1)Ammono S. A. (2)Ammono S. A. (3)Lux Material Co., Ltd. (4)Saint-Gobain Crystals - Photonic Materials (5)Xiamen Powerway Advanced Material Co. Ltd. (6)MTI Corp. (7)MTI Corp. (8)The Roditi International Corp. Ltd. (9)RF-Lambda USA LLC (10)Atecom Technology Co., Ltd (11)Kyma Technology | ||
>300[2,9] 475(Semi insulating)[3,7] 230-280(Semi insulating)[4] 260(Semi insulating)[5] ~260(Semi insulating)[10] |
||||||
Misorientation |
deg |
SEM and TEM |
On demand |
|||
Macro defect density |
/cm2 |
TEM and XRD |
<5[1,3,6] A grade<=2; B grade>2[2] <10[4] A grade<=3;B grade>3[5] |
(1)Precision Micro-Optics LLC (2)Xiamen Powerway Advanced Material Co. Ltd. (3)MTI Corp. (4)RF-Lambda USA LLC (5)Atecom Technology Co., Ltd (6)Kyma Technology | ||
Bow |
um |
SEM or AFM |
<10[1,5] <20[2,3] <5[4] 5-50[6,8] <30[7] |
(1)Ammono S. A. (2)Lux Material Co., Ltd. (3)Xiamen Powerway Advanced Material Co. Ltd. (4)MTI Corp. (5)The Roditi International Corp. Ltd. (6)RF-Lambda USA LLC (7)Atecom Technology Co., Ltd (8)Kyma Technology | ||
Total thickness variation (TTV) |
um |
AFM(preferred) and SEM |
<40[1,6],~20[2] <15[3,4] <10[5] 5-25[7] <20[8] 10-50[9] |
(1)Ammono S. A. (2)Ammono S. A. (3)Lux Material Co., Ltd. (4)Xiamen Powerway Advanced Material Co. Ltd. (5)MTI Corp. (6)The Roditi International Corp. Ltd. (7)RF-Lambda USA LLC (8)Atecom Technology Co., Ltd (9)Kyma Technology | ||
Surface roughness |
nm |
Profilometer and AFM |
Ra<0.2[1,2] RMS<0.5(epi ready)[3,4,5,7] Ra<0.3[6] |
(1)Lux Material Co., Ltd. (2)Xiamen Powerway Advanced Material Co. Ltd. (3)MTI Corp. (4)The Roditi International Corp. Ltd. (5)RF-Lambda USA LLC (6)Atecom Technology Co., Ltd (7)Kyma Technology | ||
Thermal expansion coeff(300K) |
/K |
Thermal elastic measurement |
along a0:5.59x10-6; along c0:7.75x10-6[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | ||
Dielectric constant(300K) |
Ellipsometry |
along a0:10.4; along c0:9.5[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | |||
Refractive index |
Ellipsometry |
2.67 at 3.38eV[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | |||
Electron Effective mass |
0.22[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | ||||
FWHM of X-ray rocking curve,epi-ready surface at 100 µm x 100 µm slit) |
arcsec |
X-ray diffraction |
~20[1,2] |
(1)Ammono S. A. (2)The Roditi International Corp. Ltd. | ||
FWHM of (102) XRD arcsec |
X-ray diffraction |
<300 |
(1)RF-Lambda USA LLC | |||
GaN template on sapphire | Bandgap(300K) |
eV |
PL |
3.44[1,2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | |
Electron mobility(300K) |
cm2/V s |
Hall effect sensor |
1350[1] 150(for n=1019)[2] 240(for n=1018)[2] 500(for n=1017)[2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | ||
Hole mobility(300K) |
cm2/V s |
Hall effect sensor |
13[2],20[1] |
(1)MTI Corp. (2)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Melting point |
K |
Thermal couple |
2573[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518[1] a=0.3189;c=0.5185[2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | ||
Thermal conductivity(300K) |
W/cm K |
Time-domain thermoreflectance |
2.3(semi insulating)[1]; 1.7(HVPE material,n=1x1017)[1] 1.2[2] |
(1)Xiamen Powerway Advanced Material Co. Ltd. (2)Kyma Technology | ||
Heat capacity |
J/mol K |
Constant presure heating |
35.3[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Elastic modulus |
GPa |
Mechanical measurement |
210[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Dislocation density |
/cm2 |
TEM and XRD |
≤1 x 108[1,2,5,7] 5 x 108-6 x 108(for N type and undoped)[3] 8 x 108(for semi insulating)[3] 8 x 107-9 x 107(for N type and undoped)[4] 5 x 108-3 x 107(for N type,Semi insulating and undoped)[6] 5 x 109[8] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Saint-Gobain Crystals-Photonic Materials (4)Saint-Gobain Crystals-Photonic Materials (5)Precision Micro-Optics LLC (6)RF-Lambda USA LLC (7)Atecom Technology Co., Ltd. (8)Kyma Technology | ||
Sheet carrier density |
/cm2 |
SIMS |
N/A |
|||
Sheet resistance/Resistivity |
ohm-cm |
<0.05(Undoped)[1,7,11] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Precision Micro-Optics LLC (4)MTI Corp. (5)MTI Corp. (6)MTI Corp. (7)RF-Lambda USA LLC (8)RF-Lambda USA LLC (9)RF-Lambda USA LLC (10)Atecom Technology Co., Ltd. (11)Kyma Technologies | |||
<0.05(N type)[1,2,3,5,10],.001-.01[8] |
||||||
<1(P type)[1] 3-5(P type)[4] |
||||||
>106(Semi insulating)[1,2,3,6,10],109-1012(Semi insulating)[9] |
||||||
Carrier concentration |
/cm3 |
SIMS |
~1019(N type)[4] 1x1018-3x1018(N type)[2] ~1018(N type)[6] 1018(N type)[7] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Saint-Gobain Crystals-Photonic Materials (3)MTI Corp. (4)MTI Corp. (5)RF-Lambda USA LLC (6)RF-Lambda USA LLC (7)Kyma Technologies | ||
~1017(P type)[1] 1017-3x1018(P type)[3] 5x1017(P type)[7] |
||||||
3x1017(undoped)[2] <2x1017(undoped)[5] 1016(undoped)[7] |
||||||
Thickness(epilayer) |
um |
Ellipsometry |
3-100(N type,undoped)[1,2,3,4,5,6] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Saint-Gobain Crystals-Photonic Materials (4)Precision Micro-Optics LLC (5)RF-Lambda USA LLC (6)Atecom Technology Co., Ltd. | ||
5-100(P type)[1] |
||||||
20-90(Semi insulating)[1,2,3,6] |
||||||
Buffer layer(sapphire) thickness |
um |
Ellipsometry |
430[1,3],330[2] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Saint-Gobain Crystals-Photonic Materials (3)MTI Corp. | ||
Misorientation |
deg |
SEM and TEM |
On demand |
|||
Macro defect density |
/cm2 |
TEM and XRD |
<5[1,3], <10[2] |
(1)MTI Corp. (2)RF-Lambda USA LLC (3)Kyma Technologies | ||
Bow |
um |
SEM or AFM |
10-500[1] |
(1)RF-Lambda USA LLC | ||
Total thickness variation (TTV) |
um |
AFM(prefered)and SEM |
<10 |
|||
Surface roughness |
nm |
Profilometer and AFM |
RMS~10[1],Ra<0.2;RMS<0.5(epi ready) |
(1)MTI Corp. | ||
Thermal expansion coeff(300K) |
/K |
Thermal elaastic measurement |
along a0:5.59x10-6[1]; along c0:7.75x10-6[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | ||
Dielectric constant(300K) |
Ellipsometry |
along a0:10.4[1]; along c0:9.5[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | |||
Refractive index |
Ellipsometry |
2.67 at 3.38eV[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | |||
Electron Effective mass |
0.22[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | ||||
FWHM of(102)XRD arcsec |
X-ray diffraction |
<250[1],~350[2],<300[3] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)MTI Corp. (3)RF-Lambda USA LLC | |||
FWHM of(002)XRD arcsec |
X-ray diffraction |
<150[1],~250[2] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)MTI Corp. |