Line 11: Line 11:
! Reference/hyperlink
! Reference/hyperlink
|-
|-
| rowspan="27"| GaN freestanding substrate
| rowspan="28"| GaN freestanding substrate
| Bandgap(300K)<br />
| Bandgap(300K)<br />
| eV<br />
| eV<br />
Line 22: Line 22:
| cm<sup>2</sup>/V s<br />
| cm<sup>2</sup>/V s<br />
| Hall effect sensor<br />
| Hall effect sensor<br />
| ~150[1],~250[2]<br />1350[4]<br/>150(for n=10<sup>19</sup>)[3]<br/>240(for n=10<sup>18</sup>)[3]<br/>500(for n=10<sup>17</sup>)[3]<br />
| ~150[1,5],~250[2]<br />1350[4]<br/>150(for n=10<sup>19</sup>)[3]<br/>240(for n=10<sup>18</sup>)[3]<br/>500(for n=10<sup>17</sup>)[3]<br />
| <br />
| <br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(4)http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(4)http://www.springer.com/materials/book/978-3-642-04828-9<br />(5)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]
|-
|-
| Hole mobility(300K)<br />
| Hole mobility(300K)<br />
Line 71: Line 71:
| /cm<sup>2</sup><br />
| /cm<sup>2</sup><br />
| TEM and XRD<br />
| TEM and XRD<br />
| ~5x10<sup>4</sup>[1]<br/>≤5 x 10<sup>6</sup>[2,4,5]<br />1x10<sup>7</sup>-4x10<sup>7</sup>[3]
| ~5x10<sup>4</sup>[1]<br/>≤5 x 10<sup>6</sup>[2,4,5,6,7]<br />1x10<sup>7</sup>-4x10<sup>7</sup>[3]<br/><10<sup>5</sup>[8]
| <br />
| <br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(5)[http://www.galliumnitrides.com/N-Type-GaN.html Xiamen Powerway Advanced Material Co. Ltd.]
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(5)[http://www.galliumnitrides.com/N-Type-GaN.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(6)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(8)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]
|-
|-
| Sheet carrier density<br />
| Sheet carrier density<br />
Line 82: Line 82:
| <br />
| <br />
|-
|-
| rowspan="3"|Sheet resistance/Resistivity<br />
| rowspan="4"|Sheet resistance/Resistivity<br />
| rowspan="3"|ohm-cm<br />
| rowspan="4"|ohm-cm<br />
| rowspan="3"|<br />
| rowspan="4"|<br />
| 0.1-1(Undoped)[3]<br />
| 0.1-1(Undoped)[3]<br />
| <br />
| <br />
| rowspan="3"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials](5)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(6)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
| rowspan="4"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials](5)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(6)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(8)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(9)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]
|-
|-
| 10<sup>-3</sup>-10<sup>-2</sup>(N type)[1]<br/><0.01(N type)[3]<br /><0.03(N type)[4]<br/><0.05(N type)[5]<br/><0.5(N type)[6]
| 10<sup>-3</sup>-10<sup>-2</sup>(N type)[1,9]<br/><0.01(N type)[3]<br /><0.03(N type)[4]<br/><0.05(N type)[5]<br/><0.5(N type)[6,7]
| <br />
| <br />
|-
|-
| 10<sup>9</sup>-10<sup>12</sup>[2]<br/>>10<sup>6</sup>(Semi insulating)[3,5,6]<br />
| 10<sup>9</sup>-10<sup>12</sup>[2,9]<br/>>10<sup>6</sup>(Semi insulating)[3,5,6,8]<br />
| <br />
| <br />
|-
| 10<sup>2</sup>-10<sup>3</sup>[9]<br/>
| <br/>
|-
|-
| rowspan="2"| Carrier concentration<br />
| rowspan="2"| Carrier concentration<br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| SIMS<br />
| rowspan="2"| SIMS<br />
| ~10<sup>19</sup>(N type)[1]<br />3x10<sup>17</sup>(N type)[2]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[3]
| ~10<sup>19</sup>(N type)[1,4]<br />3x10<sup>17</sup>(N type)[2]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[3]
|<br />
|<br />
| rowspan="2"| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]
| rowspan="2"| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(4)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]
|-
|-
| N/A(P type)<br />
| 10<sup>18</sup>(P type)<br />
| <br />
| <br />
|-
|-
Line 108: Line 111:
| rowspan="2"|um<br />
| rowspan="2"|um<br />
| rowspan="2"|Ellipsometry<br />
| rowspan="2"|Ellipsometry<br />
| 300-400(N type)[1,4]<br/>475[3]<br/>200-475(N type)<br />230-280[4]<br/>260[5]
| 300-400(N type)[1,4]<br/>475[3]<br/>200-475(N type)<br />230-280[4]<br/>260[5]<br/>475[6]<br/>>300[9]
| <br />
| <br />
| rowspan="2"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(5)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
| rowspan="2"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]<br/>(5)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(6)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(7)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmsemi-insulating1sp.aspx MTI Corp.]<br/>(8)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]
|-
|-
| >300[2]<br/>475(Semi insulating)[3]<br />230-280[4]<br/>260[5]
| >300[2,9]<br/>475(Semi insulating)[3,7]<br />230-280[4]<br/>260[5]
| <br />
| <br />
|-
|-
Line 125: Line 128:
| /cm<sup>2</sup><br />
| /cm<sup>2</sup><br />
| TEM and XRD<br />
| TEM and XRD<br />
| <5[1]<br/>A grade<=2; B grade>2[2]<br />
| <5[1,3]<br/>A grade<=2; B grade>2[2]<br />
| <br/>
| <br/>
| (1)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(2)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
| (1)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(2)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(3)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]
|-
|-
| Bow<br />
| Bow<br />
| um<br />
| um<br />
| SEM or AFM<br />
| SEM or AFM<br />
| <10[1]<br/><20[2,3]<br/><5<br />
| <10[1,5]<br/><20[2,3]<br/><5[4]<br />
| <br/>
| <br/>
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(4)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(5)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]
|-
|-
| Total thickness variation (TTV)<br />
| Total thickness variation (TTV)<br />
| um<br />
| um<br />
| AFM(preferred) and SEM<br />
| AFM(preferred) and SEM<br />
| <40[1],~20[2]<br/><15[3,4]<br /><10<br />
| <40[1,6],~20[2]<br/><15[3,4]<br /><10[5]<br />
| <br />
| <br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(5)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(6)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]
|-
|-
| Surface roughness<br />
| Surface roughness<br />
| nm<br />
| nm<br />
| Profilometer and AFM<br />
| Profilometer and AFM<br />
| Ra<0.2[1,2];RMS<0.5(epi ready)<br />
| Ra<0.2[1,2];RMS<0.5(epi ready)[3,4]<br />
| <br />
| <br />
| (1)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br />(2)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
| (1)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br />(2)[http://www.powerwaywafer.com/GaN-Substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br/>(3)[http://www.mtixtl.com/gan-singlecrystalsubstrate000110x10x0475mmn-type1sp.aspx MTI Corp.]<br/>(4)[http://www.roditi.com/docs/GaN-Substrate-C-plane.pdf The Roditi International Corp. Ltd.]
|-
|-
| Thermal expansion coeff(300K)<br />
| Thermal expansion coeff(300K)<br />

Revision as of 02:27, 14 October 2013

Figures of Merit for GaN substrates

Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
 eV
 PL
 3.44[1,2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Electron mobility(300K)
 cm2/V s
 Hall effect sensor
 ~150[1,5],~250[2]
1350[4]
150(for n=1019)[3]
240(for n=1018)[3]
500(for n=1017)[3]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Xiamen Powerway Advanced Material Co. Ltd.
(4)http://www.springer.com/materials/book/978-3-642-04828-9
(5)The Roditi International Corp. Ltd.
Hole mobility(300K)
 cm2/V s
 Hall effect sensor
 13[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
 K
 Thermal couple
 2573[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518[1]
a=0.3189;c=0.5185[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.0-2.4[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Heat capacity
 J/mol K
 Constant presure heating
 35.3[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
 GPa
 Mechanical measurement
 210[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9

Dislocation density
 /cm2
 TEM and XRD
 ~5x104[1]
≤5 x 106[2,4,5,6,7]
1x107-4x107[3]
<105[8]
(1)Ammono S. A.
(2)Lux Material Co., Ltd.
(3)Saint-Gobain Crystals - Photonic Materials
(4)Precision Micro-Optics LLC
(5)Xiamen Powerway Advanced Material Co. Ltd.
(6)MTI Corp.
(7)MTI Corp.
(8)The Roditi International Corp. Ltd.
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
0.1-1(Undoped)[3]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
(4)Saint-Gobain Crystals - Photonic Materials(5)Precision Micro-Optics LLC
(6)Xiamen Powerway Advanced Material Co. Ltd.
(7)MTI Corp.
(8)MTI Corp.
(9)The Roditi International Corp. Ltd.
10-3-10-2(N type)[1,9]
<0.01(N type)[3]
<0.03(N type)[4]
<0.05(N type)[5]
<0.5(N type)[6,7]
109-1012[2,9]
>106(Semi insulating)[3,5,6,8]
102-103[9]
Carrier concentration
 /cm3
 SIMS
 ~1019(N type)[1,4]
3x1017(N type)[2]
1x1018-3x1018(N type)[3]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Saint-Gobain Crystals - Photonic Materials
(4)The Roditi International Corp. Ltd.
1018(P type)
Thickness
 um
 Ellipsometry
 300-400(N type)[1,4]
475[3]
200-475(N type)
230-280[4]
260[5]
475[6]
>300[9]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
(4)Saint-Gobain Crystals - Photonic Materials
(5)Xiamen Powerway Advanced Material Co. Ltd.
(6)MTI Corp.
(7)MTI Corp.
(8)The Roditi International Corp. Ltd.
>300[2,9]
475(Semi insulating)[3,7]
230-280[4]
260[5]
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 <5[1,3]
A grade<=2; B grade>2[2]
(1)Precision Micro-Optics LLC
(2)Xiamen Powerway Advanced Material Co. Ltd.
(3)MTI Corp.
Bow
 um
 SEM or AFM
 <10[1,5]
<20[2,3]
<5[4]
(1)Ammono S. A.
(2)Lux Material Co., Ltd.
(3)Xiamen Powerway Advanced Material Co. Ltd.
(4)MTI Corp.
(5)The Roditi International Corp. Ltd.
Total thickness variation (TTV)
 um
 AFM(preferred) and SEM
 <40[1,6],~20[2]
<15[3,4]
<10[5]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
(4)Xiamen Powerway Advanced Material Co. Ltd.
(5)MTI Corp.
(6)The Roditi International Corp. Ltd.
Surface roughness
 nm
 Profilometer and AFM
 Ra<0.2[1,2];RMS<0.5(epi ready)[3,4]
(1)Lux Material Co., Ltd.
(2)Xiamen Powerway Advanced Material Co. Ltd.
(3)MTI Corp.
(4)The Roditi International Corp. Ltd.
Thermal expansion coeff(300K)
 /K
 Thermal elastic measurement
 along a0:5.59x10-6; along c0:7.75x10-6[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Refractive index
Ellipsometry
 2.67 at 3.38eV[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Electron Effective mass

0.22[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
FWHM of X-ray rocking curve,epi-ready surface at 100 µm x 100 µm slit)
 arcsec
 X-ray diffraction
 ~20[1]
(1)Ammono S. A.
GaN template on sapphire Bandgap(300K)
 eV
 PL
 3.44[1,2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Electron mobility(300K)
 cm2/V s
 Hall effect sensor
 1350[1]
150(for n=1019)[2]
240(for n=1018)[2]
500(for n=1017)[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Hole mobility(300K)
 cm2/V s
 Hall effect sensor
 13[2],20[1]
(1)MTI Corp.
(2)http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
 K
 Thermal couple
 2573[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518[1]
a=0.3189;c=0.5185[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.3(semi insulating)[1]; 1.7(HVPE material,n=1x1017)[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Heat capacity
 J/mol K
 Constant presure heating
 35.3[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
 GPa
 Mechanical measurement
 210[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Dislocation density
 /cm2
 TEM and XRD
 ≤1 x 108[1,2,5,7]
5 x 108-6 x 108(for N type and undoped)[3]
8 x 108(for semi insulating)[3]
8 x 107-9 x 107(for N type and undoped)[4]
5 x 108-3 x 107(for N type,Semi insulating and undoped)[6]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Saint-Gobain Crystals-Photonic Materials
(5)Precision Micro-Optics LLC
(6)RF-Lambda USA LLC
(7)Atecom Technology Co., Ltd.
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
<0.05(Undoped)[1,7,11]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Precision Micro-Optics LLC
(4)MTI Corp.
(5)MTI Corp.
(6)MTI Corp.
(7)RF-Lambda USA LLC
(8)RF-Lambda USA LLC
(9)RF-Lambda USA LLC
(10)Atecom Technology Co., Ltd.
(11)Kyma Technologies
<0.05(N type)[1,2,3,5,10],.001-.01[8]
<1(P type)[1]
3-5(P type)[4]
>106(Semi insulating)[1,2,3,6,10],109-1012(Semi insulating)[9]
Carrier concentration
 /cm3
 SIMS
 ~1019(N type)[4]
1x1018-3x1018(N type)[2]
~1018(N type)[6]
1018(N type)[7]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
(4)MTI Corp.
(5)RF-Lambda USA LLC
(6)RF-Lambda USA LLC
(7)Kyma Technologies
~1017(P type)[1]
1017-3x1018(P type)[3]
5x1017(P type)[7]
3x1017(undoped)[2]
<2x1017(undoped)[5]
1016(undoped)[7]
Thickness(epilayer)
 um
 Ellipsometry
 3-100(N type,undoped)[1,2,3,4,5,6]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Precision Micro-Optics LLC
(5)RF-Lambda USA LLC
(6)Atecom Technology Co., Ltd.
5-100(P type)[1]
20-90(Semi insulating)[1,2,3,6]
Buffer layer(sapphire) thickness
 um
 Ellipsometry
 430[1,3],330[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 <5[1,3], <10[2]
(1)MTI Corp.
(2)RF-Lambda USA LLC
(3)Kyma Technologies
Bow
 um
 SEM or AFM
 10-500[1]
(1)RF-Lambda USA LLC
Total thickness variation (TTV)
 um
 AFM(prefered)and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 RMS~10[1],Ra<0.2;RMS<0.5(epi ready)
(1)MTI Corp.
Thermal expansion coeff(300K)
 /K
 Thermal elaastic measurement
 along a0:5.59x10-6[1]; along c0:7.75x10-6[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Dielectric constant(300K)
Ellipsometry
 along a0:10.4[1]; along c0:9.5[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Refractive index
Ellipsometry
 2.67 at 3.38eV[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Electron Effective mass

0.22[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
FWHM of(102)XRD arcsec
X-ray diffraction
 <250[1],~350[2],<300[3]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
(3)RF-Lambda USA LLC
FWHM of(002)XRD arcsec
X-ray diffraction
 <150[1],~250[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
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