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=== Background === | === Background === | ||
In<sub>x</sub>Ga<sub>1−x</sub>N is a III-V [[semiconductor]] alloy with optoelectronic properties that are well-suited for application in solar [[photovoltaic]] (PV) cells. By altering the indium content in the alloy, the band gap of In<sub>x</sub>Ga<sub>1−x</sub>N can be tuned from 0.7 eV to 3.4 eV spanning nearly the entire solar spectrum. However, due to a variety of factors such as atomic lattice mismatch between InN and GaN, it is difficult to grow high-quality In<sub>x</sub>Ga<sub>1−x</sub>N films with a medium-high indium content using conventional deposition techniques. The In<sub>x</sub>Ga<sub>1−x</sub>N thin films characterized in this paper could be deposited on an inexpensive silicon dioxide (SiO<sub>2</sub>) substrate | In<sub>x</sub>Ga<sub>1−x</sub>N is a III-V [[semiconductor]] alloy with optoelectronic properties that are well-suited for application in solar [[photovoltaic]] (PV) cells. By altering the indium content in the alloy, the band gap of In<sub>x</sub>Ga<sub>1−x</sub>N can be tuned from 0.7 eV to 3.4 eV spanning nearly the entire solar spectrum. However, due to a variety of factors such as atomic lattice mismatch between InN and GaN, it is difficult to grow high-quality In<sub>x</sub>Ga<sub>1−x</sub>N films with a medium-high indium content using conventional deposition techniques. The In<sub>x</sub>Ga<sub>1−x</sub>N thin films characterized in this paper could be deposited on an inexpensive silicon dioxide (SiO<sub>2</sub>) substrate using a novel plasma-enhanced evaporation deposition system. This paper presents the results of optical characterization using spectroscopic ellipsometry of wurtzite In<sub>x</sub>Ga<sub>1−x</sub>N thin films with medium indium content (0.38<x<0.68) and proposes a Kramers-Kronig consistent parametric model for the optical functions of In<sub>x</sub>Ga<sub>1−x</sub>N. | ||
=== Experimental === | === Experimental === |