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InGaN solar cells literature review: Revision history
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→[http://dx.doi.org/10.1063/1.1358368 Compositional dependence of the strain-free optical band gap in In[sub x]Ga[sub 1−x]N layers]
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→http://resolver.scholarsportal.info.proxy.queensu.ca/resolve/03701972/v241i0012/2802_foinwifbhvpe.xml Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy]
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→http://resolver.scholarsportal.info.proxy.queensu.ca/resolve/01694332/v255i13-14/6705_inagbmgmsaop.xml InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties]
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/* Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. D. G. Pacheco-Salazar, J. R. Leite, F. Cerdeira, E. A. Meneses, S. F. Li, D. J. A
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/* Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth. S. Keating, M.G. Urquhart, D.V.P. McLaughlin and J.M. Pearce, “Effects of
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