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* The lower the vapor pressure and/or smaller the molecular weight of the contaminant compounds, the more easily they will adsorb onto the surface.
* The lower the vapor pressure and/or smaller the molecular weight of the contaminant compounds, the more easily they will adsorb onto the surface.
* H2SO4/H2O2 and HNO3 could not completely remove a monolayer of organic contaminants. Dilute HF and O3/H2O succeeded in this. Reasons for these discussed in the paper, relates to the polarity of the molecules.
* H2SO4/H2O2 and HNO3 could not completely remove a monolayer of organic contaminants. Dilute HF and O3/H2O succeeded in this. Reasons for these discussed in the paper, relates to the polarity of the molecules.
* Oxygen purging resulted in the same amount of organic contaminants than with no purging, whereas purging with N2 reduced the amount of organic additives adsorbing on the wafer surfaces significantly. Reason for this: native oxide did not grown in N2 ambient, and the surface hence remained nonpolar. O2 oxidized the surface, which thus became polar and attracted contaminants.
* Conclusion: boxes should be filled with N2 if organic contamination should be prevented.


=== K. J. Budde, W. J. Holzapfel, and M. M. Beyer , “[http://jes.ecsdl.org/content/142/3/888.short Application of Ion Mobility Spectrometry to Semiconductor Technology: Outgassings of Advanced Polymers under Thermal Stress]” ''Journal of The Electrochemical Society'', '''142'''(3), 888-897, 1995. ===
=== K. J. Budde, W. J. Holzapfel, and M. M. Beyer , “[http://jes.ecsdl.org/content/142/3/888.short Application of Ion Mobility Spectrometry to Semiconductor Technology: Outgassings of Advanced Polymers under Thermal Stress]” ''Journal of The Electrochemical Society'', '''142'''(3), 888-897, 1995. ===
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