{"Page SDG":"SDG07 Affordable and clean energy, SDG09 Industry innovation and infrastructure","Page URL":"https://www.appropedia.org/Semiconductor_recycling_plant_case_study_of_InGaN_photovoltaic_manufacturing","Page affiliations":"Category:Michigan Technological University","Page description":"The primary method for deposition of InGaN is Metal-organic Chemical Vapor Deposition (MOCVD), a form of chemical vapor deposition (CVD), pictorially discribed in Figure 1. This method creates layers of material with a thickness ranging between 15-60nm. The epitaxial layer is formed by pyrolysis of chemicals such as trimethylgallium (TMG), triethylgallium (TEG), and trimethylindium (TMI)\non GaN\nor sapphire substrates.\nUsing sapphire substrates can cause complications in determining index of refraction through spectroscopic ellipsometry due to its transparency. In these situations GaN substrates are preferable.","Page image":"File:CVD.jpg","Page is part of":"Category:MY3701","Page keywords":"industrial ecology, InGaN, Semiconductor, photovoltaics, recycling, solar cells, Energy, Energy efficiency, Environmental philosophy, Industry, Sustainability, Waste management","Page language":"en","Page license":"CC-BY-SA-3.0","Page title":"Semiconductor recycling plant case study of InGaN photovoltaic manufacturing","Page views":"145","Page year":"Saturday, 01-Jan-11 00:00:00 UTC","Project authors":"User:Mlmulder, User:Slleonar, User:Dshein, User:Ceverett","Project coordinates":"43.621194444444, -84.682433333333","Project location":"Michigan, USA","Project thumb":"https://www.appropedia.org/w/images/thumb/0/08/CVD.jpg/330px-CVD.jpg","Modification date":"Friday, 28-Nov-25 14:25:26 UTC"}