{"id":12766,"key":"Metalorganic_Vapour_Phase_Epitaxy","title":"Metalorganic Vapour Phase Epitaxy","latest":{"id":1224523,"timestamp":"2026-01-09T01:01:04Z"},"content_model":"wikitext","license":{"url":"https://www.appropedia.org/Appropedia:Copyrights","title":"CC-BY-SA-4.0"},"source":"Metalorganic Vapour Phase Epitaxy- is a method of creating controllable epitaxial layered structures by atomic deposition over a substrate material. A substrate wafer is placed on a graphite susceptor and heated in a reaction vessel. Compounds are grown in a hydrogen atmosphere and then form epitaxial layers on the substrate as they decompose.\n\n[[gallium arsenide solar cells]]\n\n== External links ==\n\n* [[Wikipedia:Metalorganic Vapour Phase Epitaxy]]\n\n{{Page data\n| license = CC-BY-SA-3.0\n| description = Metalorganic Vapour Phase Epitaxy described plainly, with Appropedia showing how thin layers support advanced solar and electronics work.\n}}\n\n[[Category:Electricity]]\n[[Category:Energy]]\n[[Category:Materials processing]]\n[[Category:Nanotechnology]]"}