Photovoltaic Literature Reviews

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Abstract:Reasons for choosing Etching process

Reference:Award-Winning Etching Process Cuts Solar Cell Costs (Revised) (Fact Sheet), The Spectrum of Clean Energy Innovation, NREL (National Renewable Energy Laboratory) - 50063.pdf


Abstract:Comparision among Silicon oxide,titanium oxide and Pure Sillicon as ARC in Etching Process

Conclusion:Sillicon oxide is the best ARC,which enhanced 20.6% in short circuit current,decreasing reflection,thus improving efficiency.

Reference:Etching, Evaporated Contacts and Antireflection Coating on Multicrystalline Silicon Solar Cell Author:A. Ibrahim, A.A. El Amin



---etching by means of reactive ion etching with SF6, or CHF3,/SF6,. ---Two type of ARC used:

(A)Graphaite Covered with conducting Sic,the graphite acts as base contact of the cells. (B) Graphite encapsulated with insulating Sic- and Si02/SiN/Si02-layers (ONO) leads to solar cells on insulating foreign substrates in Method B,the efficiency was improved by 11%:

future scope:same experiment using wet processing

Reference:Ludemann, R., Schaefer, S., Schule, C. and Hebling, C., 1997, January. Dry processing of mc-silicon thin-film solar cells on foreign substrates leading to 11% efficiency. In Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE (pp. 159-162). IEEE.


Description:For normally incident light falling upon periodic textures, angles of 45° ensure double-bounce reflectances will occur; angles of 60° yield triple-bounce reflectances at least. As facet tilt angles decrease below a , 45°, less and less light will receive double-bounce incidence, closer to the base of the grooves, until at angles below 30°, no light will receive multiple bounce incidence in air, and reflectance levels are equivalent to that of polished silicon

references: Alkaline Etching for Reflectance Reduction in Multicrystalline Silicon Solar Cells J. D. Hylton,z A. R. Burgers, and W. C. Sinke""

Reference:Effect of Ag Particle Size in Thick-Film Ag Paste on the Electrical and Physical Properties of Screen Printed Contacts and Silicon Solar Cells Mohamed M. Hilali,a Kenta Nakayashiki,a Chandra Khadilkar,b Robert C. Reedy,c Ajeet Rohatgi,a Aziz Shaikh,d Steve Kim,d and Srinivasan Sridharanb

Result:Small to medium Ag particles reduce the series resistance,higher shunt resistance,decrease the leakage current and improve the fill factor Thus improving the efficiency by 17.4%

6 link:""

Reference:Anti-reflective coatings: A critical, in-depth review Hemant Kumar Raut,Anand Ganesh,Sreekumaran Nairb and Seeram Ramakrishna

description:abour ARC in daily life,advantage of ARC in Solar cell

you can read it for your knowledge..

6 link:""

Reference:ZnO Nanostructures as Efficient Antireflection Layers in Solar Cells Yun-Ju Lee,* Douglas S. Ruby, David W. Peters, Bonnie B. McKenzie, and Julia W. P. Hsu

description: between SiN and ZnO,Zno acts as better ARC

future scope:we may further improve ARC performance by tailoring the thickness of the bottom fused ZnO layer and through better control of tip tapering.""

Reference:Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching by P. Papet, O. Nichiporuk, Kaminski, Y. Rozier, J. Kraiem,J.-F. Lelievre, A. Chaumartin, A. Fave, M. Lemiti

finding:here TAMH is compared among NaOH and KOH. by using TMAH pyramidal texture and SiNx:H ARC, 2.7% less reflectance is obtained

Result:TMAH pyramidal texture and SiNx:H ARC is substituted traditional Alkaline now it is used in front surface to reduce reflectance and to improve light trapping.


Reference:Texture etched ZnO:Al coated glass substrates for silicon based thin Ælm solar cells O. Kluth, B. Rech, L. Houben, S. Wieder, G. Scho,C. Beneking,H. Wagner,A.Lo,H.W. Schock

description:here the substrate is etched with HCL solution and in the DC and RF sputtering,on glass substrates from ceramic (ZnO:(Al)2(O)3 and metallic (Zn:Al) targets,respectively,then it is compared with smooth ZnO substrate.

result:by this,separate optimization of the electro-optical and light scattering properties can be done

future scope:he light scattering properties of suitable Films can be controlled over a wide range simply by varying the etching time. Moreover, the electrical properties are not affected by the etching process. Thus, within certain limits a separate optimiza-tion of the electro-optical and light scattering properties is possible.