Photovoltaic Literature Reviews

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Abstract:Reasons for choosing Etching process

Reference:Award-Winning Etching Process Cuts Solar Cell Costs (Revised) (Fact Sheet), The Spectrum of Clean Energy Innovation, NREL (National Renewable Energy Laboratory) - 50063.pdf


Abstract:Comparision among Silicon oxide,titanium oxide and Pure Sillicon as ARC in Etching Process

Conclusion:Sillicon oxide is the best ARC,which enhanced 20.6% in short circuit current,decreasing reflection,thus improving efficiency.

Reference:Etching, Evaporated Contacts and Antireflection Coating on Multicrystalline Silicon Solar Cell Author:A. Ibrahim, A.A. El Amin



---etching by means of reactive ion etching with SF6, or CHF3,/SF6,. ---Two type of ARC used:

(A)Graphaite Covered with conducting Sic,the graphite acts as base contact of the cells. (B) Graphite encapsulated with insulating Sic- and Si02/SiN/Si02-layers (ONO) leads to solar cells on insulating foreign substrates in Method B,the efficiency was improved by 11%:

future scope:same experiment using wet processing

Reference:Ludemann, R., Schaefer, S., Schule, C. and Hebling, C., 1997, January. Dry processing of mc-silicon thin-film solar cells on foreign substrates leading to 11% efficiency. In Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE (pp. 159-162). IEEE.