Introduction
This protocol is for wafer cleaning. Wafer no matter made of silicon or sapphire should be cleaned to remove chemical residuals and other interface defects before deposition.
Cleaning procedures
1.Materials:
a.Equipment
- 50ml empty beaker * 6
- stainless tweezers *2, Teflon wafer holders
- Thermometer(0-200C or above)
- Ultrasonic bath with heaters
b.Chemicals
- 69% HNO3 36% HCl, methanol, toluene, DI water
c.Engineering controls:
- Conduct procedure in ventilated fume hood.
- Work area must contain an eye wash and safety shower with unobstructed asscess
d.Personal protective equipment:
- Trionic gloves on top of nitrile gloves, apron, goggles, acid sleeves, and face-shield
2.Procedures:
a.Prepare the following solutions 30ml each in 200ml beaker
- 1.Toluene
- 2.Methanol*2
- 3.DI water
- 4.HNO3+HCl (1:3)
b.Procedures developed for cleaning
- 1.Toluene 100C 15min in ultrasonic bath
- 2.Methanol rinse
- 3.Methanol 100C 5min in ultrasonic bath
- 4.DI water rinse and N2 flow
- 5.68% HNO3 : 36% HCl = 1:3 130C 15min.
- 6.DI water rinse and N2 flow