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--[[User:J.M.Pearce|Dr. Pearce]]
--[[User:J.M.Pearce|Dr. Pearce]]
==Remark==
Please note that in the vast majority of growth processes, a large excess of As precursor to Ga precursor (that is, a high ratio of e.g. AsH3:Ga(CH3)3) is used.  This is because of the volatility of arsenic at elevated temperatures; if an excess is not provided, the resulting material will become astoichiometric and have mediocre properties.  Ratios as high as 150:1 are common.  Thus, the problem of dealing with waste is primarily a problem of dealing with arsenic rather than gallium.
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