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Gallium arsenide (GaAs) is a semiconductor material that is used in a wide variety of applications ranging from circuits to solar cells.  GaAs is most useful for solar cell applications in a thin film form, which can be obtained in several ways.
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The most common ways of producing GaAs films are Vapour Phase Epitaxy (VPE), Metalorganic Chemical Vapour Deposition (MOCVD), and Molecular Beam Epitaxy (MBE).
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Revision as of 16:39, 21 September 2011

Gallium arsenide (GaAs) is a semiconductor material that is used in a wide variety of applications ranging from circuits to solar cells. GaAs is most useful for solar cell applications in a thin film form, which can be obtained in several ways.


The most common ways of producing GaAs films are Vapour Phase Epitaxy (VPE), Metalorganic Chemical Vapour Deposition (MOCVD), and Molecular Beam Epitaxy (MBE).


Asi.png This page was part of a project for MY3701 -- an MTU class on semiconductors.

This page is now open edit -- please fix mistakes or feel free to leave comments using the discussion tab.