InGaN solar cells literature review: Revision history

28 February 2024

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23 October 2023

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21 April 2023

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10 October 2022

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15 May 2022

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14 May 2022

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2 March 2022

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12 January 2022

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10 January 2022

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9 January 2022

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• curprev 16:2416:24, 9 January 2022‎ Irene92 talk contribs‎ 7,263 bytes −124,660‎ Replaced content with "{{Page data | part-of = Dirk McLaughlin Thesis, Queens Applied Sustainability Group Literature Reviews | keywords = Materials processing, Photovoltaics, ingan, sollar cell..." undo Tag: Replaced

23 August 2021

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27 May 2021

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10 May 2021

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30 March 2021

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31 January 2021

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13 January 2021

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17 November 2020

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14 November 2020

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24 February 2013

• curprev 01:2801:28, 24 February 2013‎ J.M.Pearce talk contribs‎ m 130,823 bytes +19‎ /* Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion D.V.P. McLaughlin & J.M. Pearce, "Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion", Metallurgical and Materials Transactio undo
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4 February 2013

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• curprev 01:1101:11, 4 February 2013‎ J.M.Pearce talk contribs‎ m 128,954 bytes 0‎ moved InGaN Solar Cells Literature Review to InGaN solar cells literature review: naming conv undo
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14 January 2013

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24 October 2011

• curprev 10:5210:52, 24 October 2011‎ Ankitvora talk contribs‎ 128,938 bytes −1,012‎ →‎Design and characterization of GaN-InGaN solar cells undo
• curprev 10:4910:49, 24 October 2011‎ Ankitvora talk contribs‎ 129,950 bytes −1,970‎ →‎Light-emitting diode extraction efficiency. Light-emitting diode extraction efficiency. M. Boroditsky, E. Yablonovitch. Final Report 1995 for MICRO Project 95-163; Industry Sponsor: Hewlett-Packard Laboratories. undo
• curprev 09:2209:22, 24 October 2011‎ Ankitvora talk contribs‎ 131,920 bytes −2,741‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo
• curprev 09:1909:19, 24 October 2011‎ Ankitvora talk contribs‎ 134,661 bytes −2,652‎ /* High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama. Applied Physics Letters, Vol 6 undo
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17 October 2011

• curprev 11:0911:09, 17 October 2011‎ Ankitvora talk contribs‎ 140,326 bytes +1,791‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo
• curprev 10:4310:43, 17 October 2011‎ Ankitvora talk contribs‎ 138,535 bytes −1‎ →‎InGaN and Light Emitting Diodes (LED) undo
• curprev 10:4310:43, 17 October 2011‎ Ankitvora talk contribs‎ 138,536 bytes +1,663‎ /* High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama. Applied Physics Letters, Vol 6 undo
• curprev 10:1010:10, 17 October 2011‎ Ankitvora talk contribs‎ 136,873 bytes +1,030‎ →‎Light-emitting diode extraction efficiency. Light-emitting diode extraction efficiency. M. Boroditsky, E. Yablonovitch. Final Report 1995 for MICRO Project 95-163; Industry Sponsor: Hewlett-Packard Laboratories. undo
• curprev 09:2809:28, 17 October 2011‎ Ankitvora talk contribs‎ 135,843 bytes +2,021‎ →‎Optical characterization of InxGa1-xN alloys undo
• curprev 09:1409:14, 17 October 2011‎ Ankitvora talk contribs‎ 133,822 bytes +305‎ →‎Optical characterization of InxGa1-xN alloys undo
• curprev 08:4008:40, 17 October 2011‎ Ankitvora talk contribs‎ 133,517 bytes +2,199‎ →‎Magnesium Doping of In-rich InGaN undo

7 October 2011

• curprev 17:5517:55, 7 October 2011‎ Ankitvora talk contribs‎ 131,318 bytes +794‎ →‎InGaN/GaN nanowire green light emitting diodes on (001) Si substrates undo
• curprev 17:4517:45, 7 October 2011‎ Ankitvora talk contribs‎ 130,524 bytes +969‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo
• curprev 17:1217:12, 7 October 2011‎ Ankitvora talk contribs‎ 129,555 bytes +1,250‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo

6 October 2011

• curprev 17:4017:40, 6 October 2011‎ J.M.Pearce talk contribs‎ m 128,305 bytes −514‎ →‎InGaN and Light Emitting Diodes (LED): cutting image doesnt add to work undo
• curprev 07:0207:02, 6 October 2011‎ Ankitvora talk contribs‎ 128,819 bytes +447‎ →‎The Controlled growth of GaN nanowires. The controlled growth of GaN nanowires. S.D.Hersee, X. Sun, X. Wang. Nano Letters. Vol 6, No 8 (2006). undo
• curprev 06:4906:49, 6 October 2011‎ Ankitvora talk contribs‎ 128,372 bytes +468‎ →‎The Controlled growth of GaN nanowires. The controlled growth of GaN nanowires. S.D.Hersee, X. Sun, X. Wang. Nano Letters. Vol 6, No 8 (2006). undo
• curprev 05:5505:55, 6 October 2011‎ Ankitvora talk contribs‎ 127,904 bytes +359‎ →‎The Controlled growth of GaN nanowires. The controlled growth of GaN nanowires. S.D.Hersee, X. Sun, X. Wang. Nano Letters. Vol 6, No 8 (2006). undo
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• curprev 04:2104:21, 6 October 2011‎ Ankitvora talk contribs‎ 127,795 bytes +384‎ →‎The Controlled growth of GaN nanowires. The controlled growth of GaN nanowires. S.D.Hersee, X. Sun, X. Wang. Nano Letters. Vol 6, No 8 (2006). undo
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• curprev 01:1501:15, 6 October 2011‎ Ankitvora talk contribs‎ 126,907 bytes +496‎ →‎The Controlled growth of GaN nanowires. The controlled growth of GaN nanowires. S.D.Hersee, X. Sun, X. Wang. Nano Letters. Vol 6, No 8 (2006). undo

4 October 2011

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30 September 2011

• curprev 12:2012:20, 30 September 2011‎ Ankitvora talk contribs‎ 126,919 bytes +1,097‎ /* Structural and optical properties of GaN nanocolumns grown on (0 0 0 1) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy. Structural and optical properties of GaN nanocolumns grown on (0 0 0 1) sapphire substrates by rf-plasma-ass undo
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27 September 2011

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25 September 2011

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23 September 2011

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8 September 2011

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25 August 2011

• curprev 16:2116:21, 25 August 2011‎ Ankitvora talk contribs‎ 124,609 bytes −3‎ →‎Light-emitting diode extraction efficiency. Light-emitting diode extraction efficiency. M. Boroditsky, E. Yablonovitch. Final Report 1995 for MICRO Project 95-163; Industry Sponsor: Hewlett-Packard Laboratories. undo

27 April 2011

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26 April 2011

• curprev 21:3721:37, 26 April 2011‎ D. McLaughlin talk contribs‎ m 124,522 bytes −1,038‎ →‎InGaN and Light Emitting Diodes (LED) undo
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24 April 2011

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• curprev 21:5621:56, 24 April 2011‎ D. McLaughlin talk contribs‎ m 125,625 bytes −1‎ →‎[http://dx.doi.org/10.1063/1.1358368 Compositional dependence of the strain-free optical band gap in In[sub x]Ga[sub 1−x]N layers] undo
• curprev 21:5421:54, 24 April 2011‎ D. McLaughlin talk contribs‎ m 125,626 bytes +936‎ →‎Optical Modelling of Thin Film Microstructures undo
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23 April 2011

• curprev 23:0023:00, 23 April 2011‎ D. McLaughlin talk contribs‎ m 113,091 bytes +5‎ →‎InGaN Material Characterization undo
• curprev 22:3122:31, 23 April 2011‎ D. McLaughlin talk contribs‎ m 113,086 bytes −3‎ →‎Band gaps and lattice parameters of 0.9 μm thick InxGa1-xN films for 0≤x≤0.140 undo
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• curprev 22:0922:09, 23 April 2011‎ D. McLaughlin talk contribs‎ m 110,530 bytes 0‎ →‎http://resolver.scholarsportal.info.proxy.queensu.ca/resolve/03701972/v241i0012/2802_foinwifbhvpe.xml Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy] undo
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• curprev 21:3221:32, 23 April 2011‎ D. McLaughlin talk contribs‎ m 104,037 bytes −9‎ →‎[http://dx.doi.org/10.1063/1.3425761 Optical and microstructural properties versus indium content in In[sub x]Ga[sub 1−x]N films grown by metal organic chemical vapor deposition] undo
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• curprev 17:0417:04, 23 April 2011‎ D. McLaughlin talk contribs‎ 89,274 bytes +4,539‎ →‎InGaN Material Characterization undo
• curprev 16:5116:51, 23 April 2011‎ D. McLaughlin talk contribs‎ m 84,735 bytes +1‎ →‎InGaN Material Characterization undo
• curprev 15:1215:12, 23 April 2011‎ D. McLaughlin talk contribs‎ m 84,734 bytes 0‎ →‎http://resolver.scholarsportal.info.proxy.queensu.ca/resolve/01694332/v255i13-14/6705_inagbmgmsaop.xml InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties] undo

21 April 2011

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• curprev 20:2520:25, 21 April 2011‎ D. McLaughlin talk contribs‎ m 80,786 bytes +17‎ /* Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. D. G. Pacheco-Salazar, J. R. Leite, F. Cerdeira, E. A. Meneses, S. F. Li, D. J. A undo
• curprev 20:2220:22, 21 April 2011‎ D. McLaughlin talk contribs‎ m 80,769 bytes −5‎ /* Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth. S. Keating, M.G. Urquhart, D.V.P. McLaughlin and J.M. Pearce, “Effects of undo
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• curprev 17:0317:03, 21 April 2011‎ D. McLaughlin talk contribs‎ m 76,263 bytes −1‎ No edit summary undo
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• curprev 15:5215:52, 21 April 2011‎ D. McLaughlin talk contribs‎ m 76,166 bytes −31‎ No edit summary undo
• curprev 15:5015:50, 21 April 2011‎ D. McLaughlin talk contribs‎ m 76,197 bytes +31‎ No edit summary undo
• curprev 15:4915:49, 21 April 2011‎ D. McLaughlin talk contribs‎ m 76,166 bytes +521‎ No edit summary undo

8 April 2011

• curprev 19:5919:59, 8 April 2011‎ D. McLaughlin talk contribs‎ m 75,645 bytes +36‎ No edit summary undo
• curprev 15:1815:18, 8 April 2011‎ D. McLaughlin talk contribs‎ m 75,609 bytes +11‎ →‎InGaN Ellipsometry undo

7 April 2011

• curprev 21:1021:10, 7 April 2011‎ Anonymous1 talk contribs‎ 75,598 bytes 0‎ /* Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-offFabrication of thin-film InGaN light-emitting diode membranes by laser lift-off. W.S. Wong, T. Sands, N.W. Cheung, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, N.M. John undo

4 March 2011

• curprev 17:4417:44, 4 March 2011‎ D. McLaughlin talk contribs‎ 75,598 bytes −67‎ /* Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films. M.M. Giangregoria, M. L undo

28 February 2011

• curprev 22:3122:31, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,665 bytes −138‎ →‎PHOTOVOLTAICS LITERATURE SURVEY (No. 59).pdf undo
• curprev 22:2722:27, 28 February 2011‎ D. McLaughlin talk contribs‎ 75,803 bytes +1‎ →‎Optimization of GaN window layer for InGaN solar cells using polarization effect undo
• curprev 22:2722:27, 28 February 2011‎ D. McLaughlin talk contribs‎ 75,802 bytes −3‎ →‎Optimization of GaN window layer for InGaN solar cells using polarization effect undo
• curprev 22:2722:27, 28 February 2011‎ D. McLaughlin talk contribs‎ 75,805 bytes +78‎ →‎Optimization of GaN window layer for InGaN solar cells using polarization effect undo
• curprev 22:2522:25, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,727 bytes +122‎ →‎MOVPEgrowthandMgdopingofInxGa1xN (x0.4) forsolarcell undo
• curprev 22:2222:22, 28 February 2011‎ D. McLaughlin talk contribs‎ 75,605 bytes −18‎ →‎InGaN-GaN multiple quantum well solar cells with long operating wavelengths undo
• curprev 22:2122:21, 28 February 2011‎ D. McLaughlin talk contribs‎ 75,623 bytes +57‎ →‎InGaN-GaN multiple quantum well solar cells with long operating wavelengths undo
• curprev 22:2022:20, 28 February 2011‎ D. McLaughlin talk contribs‎ 75,566 bytes +37‎ →‎Growth, fabrication, and characterization of InGaN solar cells undo
• curprev 22:1922:19, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,529 bytes +58‎ →‎Design and characterization of GaN-InGaN solar cells undo
• curprev 22:1822:18, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,471 bytes +163‎ →‎Correlation of crystalline defects with photoluminescence of InGaN layers undo
• curprev 22:1622:16, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,308 bytes +95‎ →‎Characteristics of InGaN designed for photovoltaic applications undo
• curprev 21:5921:59, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,213 bytes −70‎ →‎Optical-field calculations for lossy multiple-layer AlxGax-1N/InxGa1-xN laser diodes. undo
• curprev 21:5621:56, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,283 bytes −68‎ /* Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method. Optical properties of wurtzite structure GaN on sapphire around fundament undo
• curprev 21:5421:54, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,351 bytes −69‎ /* Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys.Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys. G.M. Laws, E.C. Larkins, I. Harrison, C. Molloy and D. Somerfield. Journal of Applied Physics Vol. undo
• curprev 21:5221:52, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,420 bytes −66‎ /* Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate. Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate. C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann and A. Krost. Journal of Applied Physics. Vol. undo
• curprev 21:4921:49, 28 February 2011‎ D. McLaughlin talk contribs‎ m 75,486 bytes −69‎ →‎Determining thin film properties by fitting optical transmittance. Determining thin film properties by fitting optical transmittance. J.D. Klein, A. Yen, S.F. Cogan. Applied Physics Letters. Vol 68. Num 4. (August 1990). undo

17 February 2011

• curprev 19:0919:09, 17 February 2011‎ D. McLaughlin talk contribs‎ m 75,555 bytes −117‎ →‎InGaN Material Characterization undo
• curprev 19:0319:03, 17 February 2011‎ D. McLaughlin talk contribs‎ m 75,672 bytes +117‎ →‎InGaN Material Characterization undo
• curprev 18:5918:59, 17 February 2011‎ D. McLaughlin talk contribs‎ m 75,555 bytes +25‎ →‎Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth undo
• curprev 18:5818:58, 17 February 2011‎ D. McLaughlin talk contribs‎ 75,530 bytes +715‎ →‎InGaN Material Characterization undo
• curprev 18:1218:12, 17 February 2011‎ D. McLaughlin talk contribs‎ m 74,815 bytes +51‎ /* Complete compositional tunability of InGaN nanowires using a combinatorial approach. Complete compositional tunability of InGaN nanowires using a combinatorial approach.T. Kuykendall, Philipp Ulrich, Shaul Aloni, Peidong Yang. Nature Vol. 6 (Oct 2 undo
• curprev 18:1118:11, 17 February 2011‎ D. McLaughlin talk contribs‎ m 74,764 bytes +20‎ →‎Background undo
• curprev 18:0718:07, 17 February 2011‎ D. McLaughlin talk contribs‎ 74,744 bytes +229‎ No edit summary undo

8 February 2011

• curprev 19:2919:29, 8 February 2011‎ D. McLaughlin talk contribs‎ m 74,515 bytes −50‎ /* Growth of vacuum evaporated ultraporous silicon studied with spectroscopic ellipsometry and scanning electron microscopy Growth of vacuum evaporated ultraporous silicon studied with spectroscopic ellipsometry and scanning electron microscopy. K. K undo
• curprev 19:2619:26, 8 February 2011‎ D. McLaughlin talk contribs‎ m 74,565 bytes −50‎ /* Monoclinic optical constants, birefringence, and dichroism of slanted titanium nanocolumns determined by generalized ellipsometry. Monoclinic optical constants, birefringence, and dichroism of slanted titanium nanocolumns determined by generalized undo
• curprev 18:4018:40, 8 February 2011‎ D. McLaughlin talk contribs‎ m 74,615 bytes −50‎ /* Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen. Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by g undo
• curprev 18:1718:17, 8 February 2011‎ D. McLaughlin talk contribs‎ m 74,665 bytes −49‎ →‎Optical absorption properties of Mg-doped GaN nanocolumns. Optical absorption properties of Mg-doped GaN nanocolumns. T. Iwanaga, T. Suzuki, S. Yagi, T. Motooka. Journal of Applied Physics, Vol 98 (2005). undo

7 February 2011

• curprev 22:1822:18, 7 February 2011‎ D. McLaughlin talk contribs‎ m 74,714 bytes −22‎ →‎===Light propagation in nanorod arrays. <ref name undo
• curprev 22:0422:04, 7 February 2011‎ D. McLaughlin talk contribs‎ m 74,736 bytes −66‎ →‎Infrared and Raman spectroscopy of ZnO nanoparticles annealed in hydrogen. Infrared and Raman spectroscopy of ZnO nanoparticles annealed in hydrogen. W.M.H.Oo, M.D.McCluskey, J.Huso, L.Bergmann. Journal of Applied Physics, Vol 102 (2007). undo
• curprev 21:5421:54, 7 February 2011‎ D. McLaughlin talk contribs‎ m 74,802 bytes +19‎ →‎The measurement of absorption edge and band gap properties of novel nanocomposite materials. The measurement of absorption edge and band gap properties of novel nanocomposite materials. T.Nguyen, A.R.Hind. Varian, Inc. undo
• curprev 21:4521:45, 7 February 2011‎ D. McLaughlin talk contribs‎ m 74,783 bytes −66‎ /* Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns. Y. kawakami, S. Suzuki, M. Funato, A. Kikuchi, K Kishino. Applied Physics Letters, Vol 89 (2006) undo
• curprev 21:4321:43, 7 February 2011‎ D. McLaughlin talk contribs‎ m 74,849 bytes −68‎ /* Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. C.A. Tran, A. undo
• curprev 21:3821:38, 7 February 2011‎ D. McLaughlin talk contribs‎ m 74,917 bytes −68‎ /* Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surfaceImproved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surfac undo
• curprev 19:4619:46, 7 February 2011‎ D. McLaughlin talk contribs‎ m 74,985 bytes −68‎ /* Spontaneous emission of localized excitons in InGaN single and multiquantum well structures.Spontaneous emission of localized excitons in InGaN single and multiquantum well structures. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura. Applied Physics undo
• curprev 19:4519:45, 7 February 2011‎ D. McLaughlin talk contribs‎ 75,053 bytes −68‎ /* InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structuresInGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures. J.J. Wierer, M.R. Krames, J.E. Epler, N.F. Gardne undo
• curprev 19:4119:41, 7 February 2011‎ D. McLaughlin talk contribs‎ m 75,121 bytes 0‎ /* Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-offFabrication of thin-film InGaN light-emitting diode membranes by laser lift-off. W.S. Wong, T. Sands, N.W. Cheung, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, N.M. John undo
• curprev 19:3719:37, 7 February 2011‎ D. McLaughlin talk contribs‎ m 75,121 bytes −68‎ /* Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-offFabrication of thin-film InGaN light-emitting diode membranes by laser lift-off. W.S. Wong, T. Sands, N.W. Cheung, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, N.M. John undo
• curprev 19:3419:34, 7 February 2011‎ D. McLaughlin talk contribs‎ m 75,189 bytes −68‎ /* High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama. Applied Physics Letters, Vol 6 undo

4 February 2011

• curprev 19:0319:03, 4 February 2011‎ D. McLaughlin talk contribs‎ m 75,257 bytes +32‎ /* Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films.Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films. L.H. Robins, A.J. Paul, C.A. Parker, J. undo
• curprev 19:0119:01, 4 February 2011‎ D. McLaughlin talk contribs‎ m 75,225 bytes −141‎ →‎Overview Articles undo

10 August 2010

• curprev 21:0321:03, 10 August 2010‎ D. McLaughlin talk contribs‎ m 75,366 bytes +31‎ /* Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. D. G. Pacheco-Salazar, J. R. Leite, F. Cerdeira, E. A. Meneses, S. F. Li, D. J. A undo
• curprev 19:4119:41, 10 August 2010‎ D. McLaughlin talk contribs‎ m 75,335 bytes −78‎ /* Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers.Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN ba undo

9 August 2010

• curprev 17:2917:29, 9 August 2010‎ D. McLaughlin talk contribs‎ m 75,413 bytes +41‎ →‎Plasmon effects on infrared spectra of GaN nanocolumns. Plasmon effects on infrared spectra of GaN nanocolumns. T. Iwanaga, T. Suzuki, S. Yagi, T. Motooka. Applied Physics Letters, Vol 86 (2005). undo
• curprev 17:2817:28, 9 August 2010‎ D. McLaughlin talk contribs‎ m 75,372 bytes +35‎ Undo revision 139645 by D. McLaughlin (Talk) undo
• curprev 17:2617:26, 9 August 2010‎ D. McLaughlin talk contribs‎ m 75,337 bytes −36‎ →‎Plasmon effects on infrared spectra of GaN nanocolumns. Plasmon effects on infrared spectra of GaN nanocolumns. T. Iwanaga, T. Suzuki, S. Yagi, T. Motooka. Applied Physics Letters, Vol 86 (2005). undo
• curprev 15:4015:40, 9 August 2010‎ D. McLaughlin talk contribs‎ m 75,373 bytes +107‎ /* Complete compositional tunability of InGaN nanowires using a combinatorial approach. Complete compositional tunability of InGaN nanowires using a combinatorial approach.T. Kuykendall, Philipp Ulrich, Shaul Aloni, Peidong Yang. Nature Vol. 6 (Oct 2 undo

7 June 2010

• curprev 17:2417:24, 7 June 2010‎ ChriswaterguyBot talk contribs‎ m 75,266 bytes +9‎ adding category based on search match and manual check. undo

10 April 2010

• curprev 17:3017:30, 10 April 2010‎ ChriswaterguyBot talk contribs‎ m 75,257 bytes +335‎ rewriting {{wp}} links, to make a local wikilink followed by {{wp sup}} (superscript link to Wikipedia) undo

26 January 2010

• curprev 17:4517:45, 26 January 2010‎ D. McLaughlin talk contribs‎ 74,922 bytes +3,268‎ No edit summary undo

14 November 2009

• curprev 06:4506:45, 14 November 2009‎ ChriswaterguyBot talk contribs‎ m 71,654 bytes −28‎ Robot: Automated text replacement (-<layout name="AT device" /> +) undo

30 October 2009

• curprev 12:5112:51, 30 October 2009‎ J.M.Pearce talk contribs‎ m 71,682 bytes +15‎ No edit summary undo

22 September 2009

• curprev 17:2917:29, 22 September 2009‎ 5mjmp talk contribs‎ 71,667 bytes +229‎ →‎Searches undo

21 September 2009

• curprev 15:4315:43, 21 September 2009‎ 5mjmp talk contribs‎ 71,438 bytes +262‎ →‎InGaN PVT Searches undo
• curprev 15:2115:21, 21 September 2009‎ 5mjmp talk contribs‎ 71,176 bytes +24‎ →‎New Searches undo

16 September 2009

• curprev 16:0016:00, 16 September 2009‎ 5mjmp talk contribs‎ 71,152 bytes +882‎ →‎09_09_15_PHOTOVOLTAICS LITERATURE SURVEY (No. 59).pdf undo
• curprev 15:5915:59, 16 September 2009‎ 5mjmp talk contribs‎ 70,270 bytes +1,244‎ →‎Optimization of GaN window layer for InGaN solar cells using polarization effect undo
• curprev 15:5615:56, 16 September 2009‎ 5mjmp talk contribs‎ 69,026 bytes +1,040‎ →‎MOVPEgrowthandMgdopingofInxGa1xN (x0.4) forsolarcell undo
• curprev 15:4915:49, 16 September 2009‎ 5mjmp talk contribs‎ 67,986 bytes +786‎ →‎InGaN-GaN multiple quantum well solar cells with long operating wavelengths undo
• curprev 15:4715:47, 16 September 2009‎ 5mjmp talk contribs‎ 67,200 bytes +1,384‎ →‎Growth, fabrication, and characterization of InGaN solar cells undo
• curprev 15:4515:45, 16 September 2009‎ 5mjmp talk contribs‎ 65,816 bytes +963‎ →‎Design and characterization of GaN-InGaN solar cells undo
• curprev 15:4315:43, 16 September 2009‎ 5mjmp talk contribs‎ 64,853 bytes +955‎ →‎Correlation of crystalline defects with photoluminescence of InGaN layers undo
• curprev 15:4015:40, 16 September 2009‎ 5mjmp talk contribs‎ 63,898 bytes +53‎ →‎Characteristics of InGaN designed for photovoltaic applications undo
• curprev 15:4015:40, 16 September 2009‎ 5mjmp talk contribs‎ 63,845 bytes +1,061‎ →‎New Searches undo
• curprev 15:3515:35, 16 September 2009‎ 5mjmp talk contribs‎ 62,784 bytes +235‎ →‎Characteristics of InGaN designed for photovoltaic applications undo
• curprev 15:3215:32, 16 September 2009‎ 5mjmp talk contribs‎ 62,549 bytes +1,087‎ →‎New Searches undo
• curprev 15:2715:27, 16 September 2009‎ 5mjmp talk contribs‎ 61,462 bytes +180‎ →‎PV in the Media undo

3 September 2009

• curprev 02:0902:09, 3 September 2009‎ J.M.Pearce talk contribs‎ m 61,282 bytes 0‎ moved Literature Review on InGaN Solar Cells to InGaN Solar Cells Literature Review undo

1 July 2009

• curprev 17:0117:01, 1 July 2009‎ M. Urquhart talk contribs‎ m 61,282 bytes +429‎ →‎Optical Modelling of Thin Film Microstructures undo

29 June 2009

• curprev 20:3320:33, 29 June 2009‎ M. Urquhart talk contribs‎ 60,853 bytes +8‎ →‎Optical Modelling of Thin Film Microstructures undo
• curprev 20:3120:31, 29 June 2009‎ M. Urquhart talk contribs‎ m 60,845 bytes +919‎ →‎Optical Modelling of Thin Film Microstructures undo
• curprev 18:1318:13, 29 June 2009‎ Anonymous1 talk contribs‎ 59,926 bytes −66‎ /* Optimization of Open-Circuit Voltage in Amorphous Silicon Solar Cells with Mixed Phase (Amorphous + Nanocrystalline) p-Type Contacts of Low Nanocrystalline Content. J. M. Pearce, N. Podraza, R. W. Collins, M.M. Al-Jassim, K.M. Jones, J. Deng, and undo
• curprev 18:1218:12, 29 June 2009‎ Anonymous1 talk contribs‎ 59,992 bytes +1,066‎ →‎Optical Modelling of Thin Film Microstructures undo

26 June 2009

• curprev 18:0318:03, 26 June 2009‎ M. Urquhart talk contribs‎ m 58,926 bytes +1,082‎ →‎Optical Modelling of Thin Film Microstructures undo

25 June 2009

• curprev 19:2619:26, 25 June 2009‎ M. Urquhart talk contribs‎ m 57,844 bytes +2‎ /* Optimization of Open-Circuit Voltage in Amorphous Silicon Solar Cells with Mixed Phase (Amorphous + Nanocrystalline) p-Type Contacts of Low Nanocrystalline Content. J. M. Pearce, N. Podraza, R. W. Collins, M.M. Al-Jassim, K.M. Jones, J. Deng, and undo
• curprev 18:5618:56, 25 June 2009‎ M. Urquhart talk contribs‎ m 57,842 bytes +1,002‎ →‎Optical Modelling of Thin Film Microstructures undo

23 June 2009

• curprev 20:1120:11, 23 June 2009‎ M. Urquhart talk contribs‎ m 56,840 bytes +1,056‎ →‎Optical Modelling of Thin Film Microstructures undo

16 June 2009

• curprev 14:3914:39, 16 June 2009‎ M. Urquhart talk contribs‎ 55,784 bytes −192‎ /* Structural and optical characterization of intrinsic GaN nanocolumnsStructural and optical characterization of intrinsic GaN nanocolumns. J. Sanchez-Paramo, J.M. Calleja, M.A. Sanchez-Garcia, E. Calleja, U. Jhan. Physica E: Low-dimensional systems undo
• curprev 14:0414:04, 16 June 2009‎ M. Urquhart talk contribs‎ m 55,976 bytes −91‎ →‎Stimulated emission from GaN nanocolumnsStimulated emission from GaN nanocolumns. A. Kikuchi, K. Yamano, M. Tada, K. Kishino. Physical Status Solidi, Vol 241, Issue 12 (2004). undo

12 June 2009

• curprev 20:1020:10, 12 June 2009‎ S.Keating talk contribs‎ 56,067 bytes +4‎ No edit summary undo
• curprev 20:0920:09, 12 June 2009‎ Anonymous1 talk contribs‎ 56,063 bytes +1,213‎ No edit summary undo

9 June 2009

• curprev 21:0121:01, 9 June 2009‎ S.Keating talk contribs‎ 54,850 bytes +1,047‎ No edit summary undo
• curprev 20:3820:38, 9 June 2009‎ M. Urquhart talk contribs‎ m 53,803 bytes +554‎ No edit summary undo
• curprev 20:2220:22, 9 June 2009‎ M. Urquhart talk contribs‎ m 53,249 bytes 0‎ /* Analytical model for the optical functions of amorphous semiconductors from the near-infrared to the ultraviolet: Applications in thin film photovoltaics. Analytical model for the optical functions of amorphous semiconductors from the near-infrare undo
• curprev 19:1519:15, 9 June 2009‎ S.Keating talk contribs‎ 53,249 bytes −39‎ No edit summary undo
• curprev 19:1219:12, 9 June 2009‎ S.Keating talk contribs‎ 53,288 bytes −67‎ No edit summary undo
• curprev 19:1019:10, 9 June 2009‎ S.Keating talk contribs‎ 53,355 bytes −51,403‎ No edit summary undo
• curprev 19:0819:08, 9 June 2009‎ S.Keating talk contribs‎ 104,758 bytes +51,247‎ No edit summary undo
• curprev 18:1318:13, 9 June 2009‎ S.Keating talk contribs‎ 53,511 bytes +1,186‎ No edit summary undo
• curprev 18:1018:10, 9 June 2009‎ S.Keating talk contribs‎ 52,325 bytes +1,073‎ No edit summary undo
• curprev 18:0518:05, 9 June 2009‎ S.Keating talk contribs‎ 51,252 bytes −6‎ No edit summary undo
• curprev 17:5717:57, 9 June 2009‎ S.Keating talk contribs‎ 51,258 bytes +6‎ No edit summary undo
• curprev 17:5417:54, 9 June 2009‎ S.Keating talk contribs‎ 51,252 bytes −2‎ No edit summary undo
• curprev 17:5317:53, 9 June 2009‎ S.Keating talk contribs‎ 51,254 bytes +518‎ No edit summary undo
• curprev 17:4717:47, 9 June 2009‎ S.Keating talk contribs‎ 50,736 bytes +507‎ No edit summary undo
• curprev 17:3417:34, 9 June 2009‎ M. Urquhart talk contribs‎ 50,229 bytes +2,235‎ →‎Light-Emitting Diode Technologies undo
• curprev 17:2717:27, 9 June 2009‎ M. Urquhart talk contribs‎ 47,994 bytes +3,659‎ →‎Light-Emitting Diode Technologies undo
• curprev 17:1917:19, 9 June 2009‎ M. Urquhart talk contribs‎ 44,335 bytes +1,077‎ No edit summary undo