InGaN based Light Emitting Diodes (LED) literature review: Revision history

9 June 2023

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14 April 2023

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3 May 2022

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2 March 2022

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13 December 2021

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10 May 2021

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18 March 2021

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3 March 2021

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4 February 2013

• curprev 01:3901:39, 4 February 2013‎ J.M.Pearce talk contribs‎ m 45,779 bytes −53‎ →‎This page describes selected literature available on InGaN based LED and LASER devices. undo

14 January 2013

• curprev 01:3001:30, 14 January 2013‎ J.M.Pearce talk contribs‎ m 45,832 bytes +8‎ No edit summary undo

28 January 2012

• curprev 07:4907:49, 28 January 2012‎ Ankitvora talk contribs‎ 45,824 bytes +1,015‎ /* InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si SubstrateA. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Japanese undo

6 January 2012

• curprev 06:3106:31, 6 January 2012‎ Ankitvora talk contribs‎ 44,809 bytes −3‎ /* InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si SubstrateA. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Japanese undo
• curprev 06:3006:30, 6 January 2012‎ Ankitvora talk contribs‎ 44,812 bytes +1,297‎ →‎CW lasing of current injection blue GaN-based vertical cavity surface emitting laser undo

1 January 2012

• curprev 21:3121:31, 1 January 2012‎ Ankitvora talk contribs‎ 43,515 bytes +7,633‎ →‎InGaN‐Based Nanorod Array Light Emitting DiodesH. Kim, Y. H. Cho, D. Y. Kim, T. W. Kang, and K. S. Chung, “InGaN‐Based Nanorod Array Light Emitting Diodes,” AIP Conference Proceedings, vol. 772, no. 1, pp. 1515-1516, Jun. 2005 undo

30 December 2011

• curprev 20:3720:37, 30 December 2011‎ Ankitvora talk contribs‎ 35,882 bytes +1,267‎ →‎Stimulated emission from GaN nanocolumnsA. Kikuchi, K. Yamano, M. Tada, and K. Kishino, “Stimulated emission from GaN nanocolumns,” physica status solidi (b), vol. 241, no. 12, pp. 2754-2758, Oct. 2004 undo

29 December 2011

• curprev 23:4823:48, 29 December 2011‎ Ankitvora talk contribs‎ 34,615 bytes +1,325‎ →‎Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etchingChiu, C.H. et al., 2007. Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching. Nanotechnology, 18(33), p.335706 undo

18 December 2011

• curprev 22:3022:30, 18 December 2011‎ Ankitvora talk contribs‎ 33,290 bytes −914‎ /* InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen annealOliver, R.A. et al., 2003. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Le undo
• curprev 22:2822:28, 18 December 2011‎ Ankitvora talk contribs‎ 34,204 bytes +914‎ →‎Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etchingChiu, C.H. et al., 2007. Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching. Nanotechnology, 18(33), p.335706 undo

17 December 2011

• curprev 19:3019:30, 17 December 2011‎ Ankitvora talk contribs‎ 33,290 bytes +1,229‎ →‎===[http://iopscience.iop.org/0957-4484/18/44/445201/ Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands<ref name undo
• curprev 19:1419:14, 17 December 2011‎ Ankitvora talk contribs‎ 32,061 bytes +5‎ /* Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesFunato, M. et al., 2006. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates. Japanese Journal of Applied Ph undo
• curprev 19:1119:11, 17 December 2011‎ Ankitvora talk contribs‎ 32,056 bytes +1,211‎ /* Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesFunato, M. et al., 2006. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates. Japanese Journal of Applied Ph undo

8 December 2011

• curprev 01:1701:17, 8 December 2011‎ Ankitvora talk contribs‎ 30,845 bytes +1,152‎ →‎GaN-based light-emitting diodes with SiONx on sidewallsZhu, Y. et al., 2007. GaN-based light-emitting diodes with SiONx on sidewalls. Semiconductor Science and Technology, 22, pp.659-662 undo
• curprev 00:0100:01, 8 December 2011‎ Ankitvora talk contribs‎ 29,693 bytes +1,434‎ →‎Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-offWong, W.S. et al., 1999. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off. Applied Physics Letters, 75, p.1360 undo

7 December 2011

• curprev 21:0221:02, 7 December 2011‎ Ankitvora talk contribs‎ 28,259 bytes +765‎ /* Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopyKawakami, Y. et al., 2007. Efficient green emission from (1122) InGaN∕GaN quantum wells on GaN microfacets probed by undo
• curprev 20:4820:48, 7 December 2011‎ Ankitvora talk contribs‎ 27,494 bytes +1,457‎ /* Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopyKawakami, Y. et al., 2007. Efficient green emission from (1122) InGaN∕GaN quantum wells on GaN microfacets probed by undo
• curprev 08:2508:25, 7 December 2011‎ Ankitvora talk contribs‎ 26,037 bytes +1,002‎ →‎===[http://onlinelibrary.wiley.com/doi/10.1002/pssa.200674834/abstract Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy<ref name undo
• curprev 07:4007:40, 7 December 2011‎ Ankitvora talk contribs‎ 25,035 bytes +1,819‎ →‎===[http://pubs.acs.org/doi/abs/10.1021/nl101027x Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy<ref name undo
• curprev 03:3003:30, 7 December 2011‎ Ankitvora talk contribs‎ 23,216 bytes −198‎ →‎References undo

6 December 2011

• curprev 19:2719:27, 6 December 2011‎ Ankitvora talk contribs‎ 23,414 bytes −7‎ /* Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesFunato, M. et al., 2006. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates. Japanese Journal of Applied Ph undo
• curprev 19:2619:26, 6 December 2011‎ Ankitvora talk contribs‎ 23,421 bytes +1,977‎ /* Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesFunato, M. et al., 2006. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates. Japanese Journal of Applied Ph undo

22 November 2011

• curprev 20:3620:36, 22 November 2011‎ Ankitvora talk contribs‎ 21,444 bytes +169‎ →‎InGaN-Based Multi-Quantum-Well-Structure Laser Diodes undo
• curprev 20:3520:35, 22 November 2011‎ Ankitvora talk contribs‎ 21,275 bytes +224‎ →‎III-V concentrator solar cell reliability prediction based on quantitative LED reliability data undo
• curprev 20:3220:32, 22 November 2011‎ Ankitvora talk contribs‎ 21,051 bytes +179‎ →‎High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes undo
• curprev 20:3020:30, 22 November 2011‎ Ankitvora talk contribs‎ 20,872 bytes +248‎ →‎High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures undo
• curprev 20:2720:27, 22 November 2011‎ Ankitvora talk contribs‎ 20,624 bytes +203‎ →‎High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures undo
• curprev 20:2020:20, 22 November 2011‎ Ankitvora talk contribs‎ 20,421 bytes +196‎ →‎High brightness green light emitting diodes with charge asymmetric resonance tunneling structure undo

18 November 2011

• curprev 18:4918:49, 18 November 2011‎ Ankitvora talk contribs‎ 20,225 bytes −1‎ →‎Light-emitting diode extraction efficiencyBoroditsky, M. & Yablonovitch, E., 1997. Light-emitting diode extraction efficiency. Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series, 3002, pp.119-122. undo
• curprev 18:4818:48, 18 November 2011‎ Ankitvora talk contribs‎ 20,226 bytes +153‎ →‎GaN-based light-emitting diodes with SiONx on sidewalls undo
• curprev 18:4718:47, 18 November 2011‎ Ankitvora talk contribs‎ 20,073 bytes +164‎ →‎Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off undo
• curprev 18:4618:46, 18 November 2011‎ Ankitvora talk contribs‎ 19,909 bytes +223‎ →‎Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy undo
• curprev 18:4418:44, 18 November 2011‎ Ankitvora talk contribs‎ 19,686 bytes +193‎ →‎Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy undo
• curprev 18:4218:42, 18 November 2011‎ Ankitvora talk contribs‎ 19,493 bytes +193‎ →‎Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy undo