Figures of Merit for GaN substrates
| Bulk Type | Property | Units | Characterization Method | Industry range | Goal | Reference/hyperlink |
|---|---|---|---|---|---|---|
| GaN freestanding substrate | Bandgap(300K) |
eV |
PL |
3.44[1,2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | |
| Electron mobility(300K) |
cm2/V s |
Hall effect sensor |
~150[1],~250[2] 1350[4] 150(for n=1019)[3] 240(for n=1018)[3] 500(for n=1017)[3] |
(1)Ammono S. A. (2)Ammono S. A. (3)Kyma Technologies (4)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Hole mobility(300K) |
cm2/V s |
Hall effect sensor |
13[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Melting point |
K |
Thermal couple |
2573[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518[1] a=0.3189;c=0.5185[2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Kyma Technologies | ||
| Thermal conductivity(300K) |
W/cm K |
Time-domain thermoreflectance |
2.0-2.4[1] |
(1)Kyma Technologies | ||
| Heat capacity |
J/mol K |
Constant presure heating |
35.3[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Elastic modulus |
GPa |
Mechanical measurement |
210[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Dislocation density |
/cm2 |
TEM and XRD |
~5x104[1] ≤5 x 106[2] 1x107-4x107[3] |
(1)Ammono S. A. (2)Lux Material Co., Ltd. (3)Saint-Gobain Crystals - Photonic Materials | ||
| Sheet carrier density |
/cm2 |
SIMS |
N/A |
|||
| Sheet resistance/Resistivity |
ohm-cm |
0.1-1(Undoped)[3] |
(1)Ammono S. A. (2)Ammono S. A. (3)Lux Material Co., Ltd. (4)Saint-Gobain Crystals - Photonic Materials | |||
| 10-3-10-2(N type)[1] <0.01(N type)[3] <0.03[4] |
||||||
| 109-1012[2] >106(Semi insulating)[3] |
||||||
| Carrier concentration |
/cm3 |
SIMS |
~1019(N type)[1] 3x1017(N type)[2] 1x1018-3x1018(N type)[3] |
(1)Ammono S. A. (2)Ammono S. A. (3)Saint-Gobain Crystals - Photonic Materials | ||
| N/A(P type) |
||||||
| Thickness |
um |
Ellipsometry |
300-400(N type)[1,4] 475[3] 200-475(N type) |
(1)Ammono S. A. (2)Ammono S. A. (3)Lux Material Co., Ltd. (4)Saint-Gobain Crystals - Photonic Materials | ||
| >300[2] 475(Semi insulating)[3] |
||||||
| Misorientation |
deg |
SEM and TEM |
On demand |
|||
| Macro defect density |
/cm2 |
TEM and XRD |
A grade<=2; B grade>2 |
|||
| Bow |
um |
SEM or AFM |
<10[1] <20[2] <5 |
(1)Ammono S. A. (2)Lux Material Co., Ltd. | ||
| Total thickness variation (TTV) |
um |
AFM(preferred) and SEM |
<40[1],~20[2] <15[3] <10 |
(1)Ammono S. A. (2)Ammono S. A. (3)Lux Material Co., Ltd. | ||
| Surface roughness |
nm |
Profilometer and AFM |
Ra<0.2[1];RMS<0.5(epi ready) |
(1)Lux Material Co., Ltd. | ||
| Thermal expansion coeff(300K) |
/K |
Thermal elastic measurement |
along a0:5.59x10-6; along c0:7.75x10-6[1] |
(1)Kyma Technologies | ||
| Dielectric constant(300K) |
Ellipsometry |
along a0:10.4; along c0:9.5[1] |
(1)Kyma Technologies | |||
| Refractive index |
Ellipsometry |
2.67 at 3.38eV[1] |
(1)Kyma Technologies | |||
| Electron Effective mass |
0.22[1] |
(1)Kyma Technologies | ||||
| FWHM of X-ray rocking curve,epi-ready surface at 100 µm x 100 µm slit) |
arcsec |
X-ray diffraction |
~20[1] |
(1)Ammono S. A. | ||
| GaN template on sapphire | Bandgap(300K) |
eV |
PL |
3.44[1,2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | |
| Electron mobility(300K) |
cm2/V s |
Hall effect sensor |
1350[1] 150(for n=1019)[2] 240(for n=1018)[2] 500(for n=1017)[2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | ||
| Hole mobility(300K) |
cm2/V s |
Hall effect sensor |
13[2],20[1] |
(1)MTI Corp. (2)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Melting point |
K |
Thermal couple |
2573[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518[1] a=0.3189;c=0.5185[2] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 (2)Xiamen Powerway Advanced Material Co. Ltd. | ||
| Thermal conductivity(300K) |
W/cm K |
Time-domain thermoreflectance |
2.3(semi insulating)[1]; 1.7(HVPE material,n=1x1017)[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | ||
| Heat capacity |
J/mol K |
Constant presure heating |
35.3[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Elastic modulus |
GPa |
Mechanical measurement |
210[1] |
(1)http://www.springer.com/materials/book/978-3-642-04828-9 | ||
| Dislocation density |
/cm2 |
TEM and XRD |
≤1 x 108[1,2,5,7] 5 x 108-6 x 108(for N type and undoped)[3] 8 x 108(for semi insulating)[3] 8 x 107-9 x 107(for N type and undoped)[4] 5 x 108-3 x 107(for N type,Semi insulating and undoped)[6] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Saint-Gobain Crystals-Photonic Materials (4)Saint-Gobain Crystals-Photonic Materials (5)Precision Micro-Optics LLC (6)RF-Lambda USA LLC (7)Atecom Technology Co., Ltd. | ||
| Sheet carrier density |
/cm2 |
SIMS |
N/A |
|||
| Sheet resistance/Resistivity |
ohm-cm |
<0.05(Undoped)[1,7,11] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Precision Micro-Optics LLC (4)MTI Corp. (5)MTI Corp. (6)MTI Corp. (7)RF-Lambda USA LLC (8)RF-Lambda USA LLC (9)RF-Lambda USA LLC (10)Atecom Technology Co., Ltd. (11)Kyma Technologies | |||
| <0.05(N type)[1,2,3,5,10],.001-.01[8] |
||||||
| <1(P type)[1] 3-5(P type)[4] |
||||||
| >106(Semi insulating)[1,2,3,6,10],109-1012(Semi insulating)[9] |
||||||
| Carrier concentration |
/cm3 |
SIMS |
~1019(N type)[4] 1x1018-3x1018(N type)[2] ~1018(N type)[6] 1018(N type)[7] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Saint-Gobain Crystals-Photonic Materials (3)MTI Corp. (4)MTI Corp. (5)RF-Lambda USA LLC (6)RF-Lambda USA LLC (7)Kyma Technologies | ||
| ~1017(P type)[1] 1017-3x1018(P type)[3] 5x1017(P type)[7] |
||||||
| 3x1017(undoped)[2] <2x1017(undoped)[5] 1016(undoped)[7] |
||||||
| Thickness(epilayer) |
um |
Ellipsometry |
3-100(N type,undoped)[1,2,3,4,5,6] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Saint-Gobain Crystals-Photonic Materials (4)Precision Micro-Optics LLC (5)RF-Lambda USA LLC (6)Atecom Technology Co., Ltd. | ||
| 5-100(P type)[1] |
||||||
| 20-90(Semi insulating)[1,2,3,6] |
||||||
| Buffer layer(sapphire) thickness |
um |
Ellipsometry |
430[1,3],330[2] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Saint-Gobain Crystals-Photonic Materials (3)MTI Corp. | ||
| Misorientation |
deg |
SEM and TEM |
On demand |
|||
| Macro defect density |
/cm2 |
TEM and XRD |
<5[1,3], <10[2] |
(1)MTI Corp. (2)RF-Lambda USA LLC (3)Kyma Technologies | ||
| Bow |
um |
SEM or AFM |
10-500[1] |
(1)RF-Lambda USA LLC | ||
| Total thickness variation (TTV) |
um |
AFM(prefered)and SEM |
<10 |
|||
| Surface roughness |
nm |
Profilometer and AFM |
RMS~10[1],Ra<0.2;RMS<0.5(epi ready) |
(1)MTI Corp. | ||
| Thermal expansion coeff(300K) |
/K |
Thermal elaastic measurement |
along a0:5.59x10-6[1]; along c0:7.75x10-6[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | ||
| Dielectric constant(300K) |
Ellipsometry |
along a0:10.4[1]; along c0:9.5[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | |||
| Refractive index |
Ellipsometry |
2.67 at 3.38eV[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | |||
| Electron Effective mass |
0.22[1] |
(1)Xiamen Powerway Advanced Material Co. Ltd. | ||||
| FWHM of(102)XRD arcsec |
X-ray diffraction |
<250[1],~350[2],<300[3] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)MTI Corp. (3)RF-Lambda USA LLC | |||
| FWHM of(002)XRD arcsec |
X-ray diffraction |
<150[1],~250[2] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)MTI Corp. |