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Figures of Merit for GaN substrates
| Bulk Type | Property | Units | Characterization Method | Industry range | Goal | Reference/hyperlink |
|---|---|---|---|---|---|---|
| GaN Freestanding Substrate | Bandgap |
eV |
PL |
3.44 |
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| Electron mobility |
cm2/V s |
1350(300K) |
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| Hole mobility |
cm2/V s |
13(300K) |
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| Melting point |
K |
thermal couple |
2573 |
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| Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518 |
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| Thermal conductivity |
W/cm K |
2.1 |
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| Heat capacity |
J/mol K |
35.3 |
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| Elastic modulus |
GPa |
210 |
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| Dislocation density |
/cm2 |
≤5 x 106 |
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| Sheet carrier density |
/cm2 |
NA |
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| Sheet resistance/Resistivity |
ohm-cm |
0.1-1(Undoped) |
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| <0.01(N type) |
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| >106(Semi insulating) |
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| Doping concentration |
/cm3 |
~1019(N type) |
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| N/A(P type) |
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| Thickness |
um |
200-475(N type) |
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| 475(Semi insulating) |
||||||
| Misorientation |
deg |
On demand |
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| Macro defect density |
/cm2 |
A grade<=2; B grade>2 |
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| Bow |
um |
<5 |
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| Total thickness variation (TTV) |
um |
<10 |
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| RMS roughness |
nm |
210 |