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Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
 eV
 PL
 3.44[1,2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Electron mobility(300K)
 cm2/V s
 Hall effect sensor
 ~150[1,5],~250[2]
1350[4]
150(for n=1019)[3]
240(for n=1018)[3]
500(for n=1017)[3]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Xiamen Powerway Advanced Material Co. Ltd.
(4)http://www.springer.com/materials/book/978-3-642-04828-9
(5)The Roditi International Corp. Ltd.
Hole mobility(300K)
 cm2/V s
 Hall effect sensor
 13[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
 K
 Thermal couple
 2573[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518[1]
a=0.3189;c=0.5185[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.0-2.4[1]
2.5[2]
(1)Xiamen Powerway Advanced Material Co. Ltd.
(2)Kyma Technology
Heat capacity
 J/mol K
 Constant presure heating
 35.3[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
 GPa
 Mechanical measurement
 210[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9

Dislocation density
 /cm2
 TEM and XRD
 ~5x104[1]
≤5 x 106[2,4,5,6,7,9,10]
1x107-4x107[3]
<105[8]
104-5x106[11]
(1)Ammono S. A.
(2)Lux Material Co., Ltd.
(3)Saint-Gobain Crystals - Photonic Materials
(4)Precision Micro-Optics LLC
(5)Xiamen Powerway Advanced Material Co. Ltd.
(6)MTI Corp.
(7)MTI Corp.
(8)The Roditi International Corp. Ltd.
(9)RF-Lambda USA LLC
(10)Atecom Technology Co., Ltd
(11)Kyma Technology
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
0.1-1(Undoped)[3]
<5(undoped)[14]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
(4)Saint-Gobain Crystals - Photonic Materials(5)Precision Micro-Optics LLC
(6)Xiamen Powerway Advanced Material Co. Ltd.
(7)MTI Corp.
(8)MTI Corp.
(9)The Roditi International Corp. Ltd.
(10)RF-Lambda USA LLC
(11)RF-Lambda USA LLC(12)Atecom Technology Co., Ltd
(13)Kyma Technology
(14)Kyma Tech.
[15]Kyma Tech.
10-3-10-2(N type)[1,9]
<0.01(N type)[3]
<0.03(N type)[4]
<0.05(N type)[5]
<0.5(N type)[6,7,10,12]
<0.02(N type)[13]
109-1012[2,9,11]
>106(Semi insulating)[3,5,6,8,12,15]
102-103(P type)[9]
Carrier concentration
 /cm3
 SIMS
 ~1019(N type)[1,4]
3x1017(N type)[2]
1x1018-3x1018(N type)[3]
1018(N type)[5]
<2x1017(N type)[6]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Saint-Gobain Crystals - Photonic Materials
(4)The Roditi International Corp. Ltd.
(5)RF-Lambda USA LLC
(6)RF-Lambda USA LLC
1018(P type)
Thickness
 um
 Ellipsometry
 300-400(N type)[1,4]
475[3]
200-475(N type)
230-280(N type)[4]
260(N type)[5]
475(N type)[6,11]
>300(N type)[9]
430(N type)[9]
260(N type)[10]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
(4)Saint-Gobain Crystals - Photonic Materials
(5)Xiamen Powerway Advanced Material Co. Ltd.
(6)MTI Corp.
(7)MTI Corp.
(8)The Roditi International Corp. Ltd.
(9)RF-Lambda USA LLC
(10)Atecom Technology Co., Ltd
(11)Kyma Technology
>300[2,9]
475(Semi insulating)[3,7]
230-280(Semi insulating)[4]
260(Semi insulating)[5]
~260(Semi insulating)[10]
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 <5[1,3,6]
A grade<=2; B grade>2[2]
<10[4]
A grade<=3;B grade>3[5]
(1)Precision Micro-Optics LLC
(2)Xiamen Powerway Advanced Material Co. Ltd.
(3)MTI Corp.
(4)RF-Lambda USA LLC
(5)Atecom Technology Co., Ltd
(6)Kyma Technology
Bow
 um
 SEM or AFM
 <10[1,5]
<20[2,3]
<5[4]
5-50[6,8]
<30[7]
(1)Ammono S. A.
(2)Lux Material Co., Ltd.
(3)Xiamen Powerway Advanced Material Co. Ltd.
(4)MTI Corp.
(5)The Roditi International Corp. Ltd.
(6)RF-Lambda USA LLC
(7)Atecom Technology Co., Ltd
(8)Kyma Technology
Total thickness variation (TTV)
 um
 AFM(preferred) and SEM
 <40[1,6],~20[2]
<15[3,4]
<10[5]
5-25[7]
<20[8]
10-50[9]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
(4)Xiamen Powerway Advanced Material Co. Ltd.
(5)MTI Corp.
(6)The Roditi International Corp. Ltd.
(7)RF-Lambda USA LLC
(8)Atecom Technology Co., Ltd
(9)Kyma Technology
Surface roughness
 nm
 Profilometer and AFM
 Ra<0.2[1,2]
RMS<0.5(epi ready)[3,4,5,7]

Ra<0.3[6]
(1)Lux Material Co., Ltd.
(2)Xiamen Powerway Advanced Material Co. Ltd.
(3)MTI Corp.
(4)The Roditi International Corp. Ltd.
(5)RF-Lambda USA LLC
(6)Atecom Technology Co., Ltd
(7)Kyma Technology
Thermal expansion coeff(300K)
 /K
 Thermal elastic measurement
 along a0:5.59x10-6; along c0:7.75x10-6[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Refractive index
Ellipsometry
 2.67 at 3.38eV[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Electron Effective mass

0.22[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
FWHM of X-ray rocking curve,epi-ready surface at 100 µm x 100 µm slit)
 arcsec
 X-ray diffraction
 ~20[1,2]
(1)Ammono S. A.
(2)The Roditi International Corp. Ltd.
FWHM of (102) XRD arcsec
X-ray diffraction
 <300
(1)RF-Lambda USA LLC
GaN template on sapphire Bandgap(300K)
 eV
 PL
 3.44[1,2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Electron mobility(300K)
 cm2/V s
 Hall effect sensor
 1350[1]
150(for n=1019)[2]
240(for n=1018)[2]
500(for n=1017)[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Hole mobility(300K)
 cm2/V s
 Hall effect sensor
 13[2],20[1]
(1)MTI Corp.
(2)http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
 K
 Thermal couple
 2573[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518[1]
a=0.3189;c=0.5185[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.3(semi insulating)[1]; 1.7(HVPE material,n=1x1017)[1]
1.2[2]
(1)Xiamen Powerway Advanced Material Co. Ltd.
(2)Kyma Technology
Heat capacity
 J/mol K
 Constant presure heating
 35.3[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
 GPa
 Mechanical measurement
 210[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Dislocation density
 /cm2
 TEM and XRD
 ≤1 x 108[1,2,5,7]
5 x 108-6 x 108(for N type and undoped)[3]
8 x 108(for semi insulating)[3]
8 x 107-9 x 107(for N type and undoped)[4]
5 x 108-3 x 107(for N type,Semi insulating and undoped)[6]
5 x 109[8]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Saint-Gobain Crystals-Photonic Materials
(5)Precision Micro-Optics LLC
(6)RF-Lambda USA LLC
(7)Atecom Technology Co., Ltd.
(8)Kyma Technology
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
<0.05(Undoped)[1,7,11]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Precision Micro-Optics LLC
(4)MTI Corp.
(5)MTI Corp.
(6)MTI Corp.
(7)RF-Lambda USA LLC
(8)RF-Lambda USA LLC
(9)RF-Lambda USA LLC
(10)Atecom Technology Co., Ltd.
(11)Kyma Technologies
<0.05(N type)[1,2,3,5,10],.001-.01[8]
<1(P type)[1]
3-5(P type)[4]
>106(Semi insulating)[1,2,3,6,10],109-1012(Semi insulating)[9]
Carrier concentration
 /cm3
 SIMS
 ~1019(N type)[4]
1x1018-3x1018(N type)[2]
~1018(N type)[6]
1018(N type)[7]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
(4)MTI Corp.
(5)RF-Lambda USA LLC
(6)RF-Lambda USA LLC
(7)Kyma Technologies
~1017(P type)[1]
1017-3x1018(P type)[3]
5x1017(P type)[7]
3x1017(undoped)[2]
<2x1017(undoped)[5]
1016(undoped)[7]
Thickness(epilayer)
 um
 Ellipsometry
 3-100(N type,undoped)[1,2,3,4,5,6]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Precision Micro-Optics LLC
(5)RF-Lambda USA LLC
(6)Atecom Technology Co., Ltd.
5-100(P type)[1]
20-90(Semi insulating)[1,2,3,6]
Buffer layer(sapphire) thickness
 um
 Ellipsometry
 430[1,3],330[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 <5[1,3], <10[2]
(1)MTI Corp.
(2)RF-Lambda USA LLC
(3)Kyma Technologies
Bow
 um
 SEM or AFM
 10-500[1]
(1)RF-Lambda USA LLC
Total thickness variation (TTV)
 um
 AFM(prefered)and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 RMS~10[1],Ra<0.2;RMS<0.5(epi ready)
(1)MTI Corp.
Thermal expansion coeff(300K)
 /K
 Thermal elaastic measurement
 along a0:5.59x10-6[1]; along c0:7.75x10-6[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Dielectric constant(300K)
Ellipsometry
 along a0:10.4[1]; along c0:9.5[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Refractive index
Ellipsometry
 2.67 at 3.38eV[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Electron Effective mass

0.22[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
FWHM of(102)XRD arcsec
X-ray diffraction
 <250[1],~350[2],<300[3]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
(3)RF-Lambda USA LLC
FWHM of(002)XRD arcsec
X-ray diffraction
 <150[1],~250[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
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Authors Joseph Rozario, Chenlong Zhang
License CC-BY-SA-3.0
Language English (en)
Related 0 subpages, 2 pages link here
Impact 243 page views
Created October 8, 2013 by Joshua M. Pearce
Modified August 15, 2023 by StandardWikitext bot
Cite as Joseph Rozario, Chenlong Zhang (2013–2023). "Figures of merit for GaN substrates". Appropedia. Retrieved April 19, 2024.
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