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{{MOST}}
=This Page is Under Construction=
==Figures of Merit for GaN substrates==
==Figures of Merit for GaN substrates==


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! Reference/hyperlink
! Reference/hyperlink
|-
|-
| rowspan="26"| GaN freestanding substrate
| rowspan="27"| GaN freestanding substrate
| Bandgap(300K)<br />
| Bandgap(300K)<br />
| eV<br />
| eV<br />
| PL<br />
| PL<br />
| 3.44<br />
| 3.44[1,2]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />(2)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
|-
|-
| Electron mobility<br />
| Electron mobility(300K)<br />
| cm<sup>2</sup>/V s<br />
| cm<sup>2</sup>/V s<br />
| Hall effect sensor<br />
| Hall effect sensor<br />
| ~150(300K)[1]<br />
| ~150[1],~250[2]<br />1350[4]<br/>150(for n=10<sup>19</sup>)[3]<br/>240(for n=10<sup>18</sup>)[3]<br/>500(for n=10<sup>17</sup>)[3]<br />
| <br />
| <br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.qualitymaterial.net/GaN-substrate.html Kyma Technologies]<br/>(4)http://www.springer.com/materials/book/978-3-642-04828-9<br />
|-
|-
| Hole mobility<br />
| Hole mobility(300K)<br />
| cm<sup>2</sup>/V s<br />
| cm<sup>2</sup>/V s<br />
| Hall effect sensor<br />
| Hall effect sensor<br />
| 13(300K)<br />
| 13[1]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />
|-
|-
| Melting point<br />
| Melting point<br />
| K<br />
| K<br />
| Thermal couple<br />
| Thermal couple<br />
| 2573<br />
| 2573[1]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />
|-
|-
| Lattice constants<br />
| Lattice constants<br />
| nm<br />
| nm<br />
| X-ray diffraction<br />
| X-ray diffraction<br />
| a=0.319;c=0.518<br />
| a=0.319;c=0.518[1]<br />a=0.3189;c=0.5185[2]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />(2)[http://www.qualitymaterial.net/GaN-substrate.html Kyma Technologies]<br/>
|-
|-
| Thermal conductivity(300K)<br />
| Thermal conductivity(300K)<br />
| W/cm K<br />
| W/cm K<br />
| Time-domain thermoreflectance<br />
| Time-domain thermoreflectance<br />
| 2.2-2.5<br />
| 2.0-2.4[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Kyma Technologies]<br />
|-
|-
| Heat capacity<br />
| Heat capacity<br />
| J/mol K<br />
| J/mol K<br />
| Constant presure heating<br />
| Constant presure heating<br />
| 35.3<br />
| 35.3[1]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />
|-
|-
| Elastic modulus<br />
| Elastic modulus<br />
| GPa<br />
| GPa<br />
| Mechanical measurement<br />
| Mechanical measurement<br />
| 210<br />
| 210[1]<br />
| <br />
| <br />
| <br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br /><br />
|-
|-
| Dislocation density<br />
| Dislocation density<br />
| /cm<sup>2</sup><br />
| /cm<sup>2</sup><br />
| TEM and XRD<br />
| TEM and XRD<br />
| ≤5 x 10<sup>6</sup><br />
| ~5x10<sup>4</sup>[1]<br/>≤5 x 10<sup>6</sup>[2]<br />1x10<sup>7</sup>-4x10<sup>7</sup>[3]
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]
|-
|-
| Sheet carrier density<br />
| Sheet carrier density<br />
Line 88: Line 85:
| rowspan="3"|ohm-cm<br />
| rowspan="3"|ohm-cm<br />
| rowspan="3"|<br />
| rowspan="3"|<br />
| 0.1-1(Undoped)<br />
| 0.1-1(Undoped)[3]<br />
| <br />
| <br />
| rowspan="3"|<br />
| rowspan="3"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]
|-
|-
| <0.01(N type)<br />
| 10<sup>-3</sup>-10<sup>-2</sup>(N type)[1]<br/><0.01(N type)[3]<br /><0.03[4]
| <br />
| <br />
|-
|-
| >10<sup>6</sup>(Semi insulating)<br />
| 10<sup>9</sup>-10<sup>12</sup>[2]<br/>>10<sup>6</sup>(Semi insulating)[3]<br />
| <br />
| <br />
|-
|-
| rowspan="2"| Doping concentration<br />
| rowspan="2"| Carrier concentration<br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| SIMS<br />
| rowspan="2"| SIMS<br />
| ~10<sup>19</sup>(N type)[1]<br />
| ~10<sup>19</sup>(N type)[1]<br />3x10<sup>17</sup>(N type)[2]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[3]
|<br />
|<br />
| rowspan="2"| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />
| rowspan="2"| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]
|-
|-
| N/A(P type)<br />
| N/A(P type)<br />
Line 111: Line 108:
| rowspan="2"|um<br />
| rowspan="2"|um<br />
| rowspan="2"|Ellipsometry<br />
| rowspan="2"|Ellipsometry<br />
| 200-475(N type)<br />
| 300-400(N type)[1,4]<br/>475[3]<br/>200-475(N type)<br />
| <br />
| <br />
| rowspan="2"|<br />
| rowspan="2"|(1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_Ultra_High_Resistivity_SI_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-Free-Standing.aspx Saint-Gobain Crystals - Photonic Materials]
|-
|-
| 475(Semi insulating)<br />
| >300[2]<br/>475(Semi insulating)[3]<br />
| <br />
| <br />
|-
|-
| Misorientation<br />
| Misorientation<br />
| deg<br />
| deg<br/>
| SEM and TEM<br />
| SEM and TEM<br />
| On demand<br />
| On demand<br />
| <br />
| <br/>
| <br />
| <br/>
|-
|-
| Macro defect density<br />
| Macro defect density<br />
Line 129: Line 126:
| TEM and XRD<br />
| TEM and XRD<br />
| A grade<=2; B grade>2<br />
| A grade<=2; B grade>2<br />
| <br />
| <br/>
| <br />
| <br/>
|-
|-
| Bow<br />
| Bow<br />
| um<br />
| um<br />
| SEM or AFM<br />
| SEM or AFM<br />
| <5<br />
| <10[1]<br/><20[2]<br/><5<br />
| <br />
| <br/>
| <br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]
|-
|-
| Total thickness variation (TTV)<br />
| Total thickness variation (TTV)<br />
| um<br />
| um<br />
| AFM(preferred) and SEM<br />
| AFM(preferred) and SEM<br />
| <10<br />
| <40[1],~20[2]<br/><15[3]<br /><10<br />
| <br />
| <br />
| <br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />(2)[http://ammono.com/files/products/Ammono_GaN_High_Transparency_n-type_substrates_v_20110906.pdf Ammono S. A.]<br/>(3)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]
|-
|-
| Surface roughness<br />
| Surface roughness<br />
| nm<br />
| nm<br />
| Profilometer and AFM<br />
| Profilometer and AFM<br />
| Ra<0.2;RMS<0.5(epi ready)<br />
| Ra<0.2[1];RMS<0.5(epi ready)<br />
| <br />
| <br />
| <br />
| (1)[http://www.luxmaterial.com/en/products-132941-0-item-164128.html?backurl=/en/products-132941-38872.html Lux Material Co., Ltd.]<br />
|-
|-
| Thermal expansion coeff(300K)<br />
| Thermal expansion coeff(300K)<br />
| /K<br />
| /K<br />
| Thermal elastic measurement<br />
| Thermal elastic measurement<br />
| along a0:5.59x10<sup>-6</sup>; along c0:7.75x10<sup>-6</sup><br />
| along a0:5.59x10<sup>-6</sup>; along c0:7.75x10<sup>-6</sup>[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Kyma Technologies]<br />
|-
|-
| Dielectric constant(300K)<br />
| Dielectric constant(300K)<br />
| <br />
| <br />
| Ellipsometry<br />
| Ellipsometry<br />
| along a0:10.4; along c0:9.5<br />
| along a0:10.4; along c0:9.5[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Kyma Technologies]<br />
|-
|-
| Refractive index<br />
| Refractive index<br />
| <br />
| <br />
| Ellipsometry<br />
| Ellipsometry<br />
| 2.67 at 3.38eV<br />
| 2.67 at 3.38eV[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Kyma Technologies]<br />
|-
|-
| Electron Effective mass<br />
| Electron Effective mass<br />
| <br />
| <br />
| <br />
| <br />
| 0.22<br />
| 0.22[1]<br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Kyma Technologies]<br />
|-
| FWHM of X-ray rocking curve,epi-ready surface at 100 µm x 100 µm slit)<br />
| arcsec<br />
| X-ray diffraction<br />
| ~20[1]<br />
| <br />
| <br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />
|-
|-
| rowspan="32"| GaN template on sapphire
| rowspan="32"| GaN template on sapphire

Revision as of 01:13, 14 October 2013

Figures of Merit for GaN substrates

Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
 eV
 PL
 3.44[1,2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Electron mobility(300K)
 cm2/V s
 Hall effect sensor
 ~150[1],~250[2]
1350[4]
150(for n=1019)[3]
240(for n=1018)[3]
500(for n=1017)[3]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Kyma Technologies
(4)http://www.springer.com/materials/book/978-3-642-04828-9
Hole mobility(300K)
 cm2/V s
 Hall effect sensor
 13[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
 K
 Thermal couple
 2573[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518[1]
a=0.3189;c=0.5185[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Kyma Technologies
Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.0-2.4[1]
(1)Kyma Technologies
Heat capacity
 J/mol K
 Constant presure heating
 35.3[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
 GPa
 Mechanical measurement
 210[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9

Dislocation density
 /cm2
 TEM and XRD
 ~5x104[1]
≤5 x 106[2]
1x107-4x107[3]
(1)Ammono S. A.
(2)Lux Material Co., Ltd.
(3)Saint-Gobain Crystals - Photonic Materials
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
0.1-1(Undoped)[3]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
(4)Saint-Gobain Crystals - Photonic Materials
10-3-10-2(N type)[1]
<0.01(N type)[3]
<0.03[4]
109-1012[2]
>106(Semi insulating)[3]
Carrier concentration
 /cm3
 SIMS
 ~1019(N type)[1]
3x1017(N type)[2]
1x1018-3x1018(N type)[3]
(1)Ammono S. A.
(2)Ammono S. A.
(3)Saint-Gobain Crystals - Photonic Materials
N/A(P type)
Thickness
 um
 Ellipsometry
 300-400(N type)[1,4]
475[3]
200-475(N type)
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
(4)Saint-Gobain Crystals - Photonic Materials
>300[2]
475(Semi insulating)[3]
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 A grade<=2; B grade>2

Bow
 um
 SEM or AFM
 <10[1]
<20[2]
<5
(1)Ammono S. A.
(2)Lux Material Co., Ltd.
Total thickness variation (TTV)
 um
 AFM(preferred) and SEM
 <40[1],~20[2]
<15[3]
<10
(1)Ammono S. A.
(2)Ammono S. A.
(3)Lux Material Co., Ltd.
Surface roughness
 nm
 Profilometer and AFM
 Ra<0.2[1];RMS<0.5(epi ready)
(1)Lux Material Co., Ltd.
Thermal expansion coeff(300K)
 /K
 Thermal elastic measurement
 along a0:5.59x10-6; along c0:7.75x10-6[1]
(1)Kyma Technologies
Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5[1]
(1)Kyma Technologies
Refractive index
Ellipsometry
 2.67 at 3.38eV[1]
(1)Kyma Technologies
Electron Effective mass

0.22[1]
(1)Kyma Technologies
FWHM of X-ray rocking curve,epi-ready surface at 100 µm x 100 µm slit)
 arcsec
 X-ray diffraction
 ~20[1]
(1)Ammono S. A.
GaN template on sapphire Bandgap(300K)
 eV
 PL
 3.44[1,2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Electron mobility(300K)
 cm2/V s
 Hall effect sensor
 1350[1]
150(for n=1019)[2]
240(for n=1018)[2]
500(for n=1017)[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Hole mobility(300K)
 cm2/V s
 Hall effect sensor
 13[2],20[1]
(1)MTI Corp.
(2)http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
 K
 Thermal couple
 2573[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518[1]
a=0.3189;c=0.5185[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.3(semi insulating)[1]; 1.7(HVPE material,n=1x1017)[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Heat capacity
 J/mol K
 Constant presure heating
 35.3[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
 GPa
 Mechanical measurement
 210[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Dislocation density
 /cm2
 TEM and XRD
 ≤1 x 108[1,2,5,7]
5 x 108-6 x 108(for N type and undoped)[3]
8 x 108(for semi insulating)[3]
8 x 107-9 x 107(for N type and undoped)[4]
5 x 108-3 x 107(for N type,Semi insulating and undoped)[6]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Saint-Gobain Crystals-Photonic Materials
(5)Precision Micro-Optics LLC
(6)RF-Lambda USA LLC
(7)Atecom Technology Co., Ltd.
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
<0.05(Undoped)[1,7,11]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Precision Micro-Optics LLC
(4)MTI Corp.
(5)MTI Corp.
(6)MTI Corp.
(7)RF-Lambda USA LLC
(8)RF-Lambda USA LLC
(9)RF-Lambda USA LLC
(10)Atecom Technology Co., Ltd.
(11)Kyma Technologies
<0.05(N type)[1,2,3,5,10],.001-.01[8]
<1(P type)[1]
3-5(P type)[4]
>106(Semi insulating)[1,2,3,6,10],109-1012(Semi insulating)[9]
Carrier concentration
 /cm3
 SIMS
 ~1019(N type)[4]
1x1018-3x1018(N type)[2]
~1018(N type)[6]
1018(N type)[7]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
(4)MTI Corp.
(5)RF-Lambda USA LLC
(6)RF-Lambda USA LLC
(7)Kyma Technologies
~1017(P type)[1]
1017-3x1018(P type)[3]
5x1017(P type)[7]
3x1017(undoped)[2]
<2x1017(undoped)[5]
1016(undoped)[7]
Thickness(epilayer)
 um
 Ellipsometry
 3-100(N type,undoped)[1,2,3,4,5,6]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Precision Micro-Optics LLC
(5)RF-Lambda USA LLC
(6)Atecom Technology Co., Ltd.
5-100(P type)[1]
20-90(Semi insulating)[1,2,3,6]
Buffer layer(sapphire) thickness
 um
 Ellipsometry
 430[1,3],330[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 <5[1,3], <10[2]
(1)MTI Corp.
(2)RF-Lambda USA LLC
(3)Kyma Technologies
Bow
 um
 SEM or AFM
 10-500[1]
(1)RF-Lambda USA LLC
Total thickness variation (TTV)
 um
 AFM(prefered)and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 RMS~10[1],Ra<0.2;RMS<0.5(epi ready)
(1)MTI Corp.
Thermal expansion coeff(300K)
 /K
 Thermal elaastic measurement
 along a0:5.59x10-6[1]; along c0:7.75x10-6[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Dielectric constant(300K)
Ellipsometry
 along a0:10.4[1]; along c0:9.5[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Refractive index
Ellipsometry
 2.67 at 3.38eV[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Electron Effective mass

0.22[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
FWHM of(102)XRD arcsec
X-ray diffraction
 <250[1],~350[2],<300[3]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
(3)RF-Lambda USA LLC
FWHM of(002)XRD arcsec
X-ray diffraction
 <150[1],~250[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
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