Line 185: Line 185:
| eV<br />
| eV<br />
| PL<br />
| PL<br />
| 3.44<br />
| 3.44[1,2]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />(2)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
|-
|-
| Electron mobility<br />
| Electron mobility(300K)<br />
| cm<sup>2</sup>/V s<br />
| cm<sup>2</sup>/V s<br />
| Hall effect sensor<br />
| Hall effect sensor<br />
| 150(300K)*<br />
| 1350[1]<br/>150(for n=10<sup>19</sup>)[2]<br/>240(for n=10<sup>18</sup>)[2]<br/>500(for n=10<sup>17</sup>)[2]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />(2)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
|-
|-
| Hole mobility<br />
| Hole mobility(300K)<br />
| cm<sup>2</sup>/V s<br />
| cm<sup>2</sup>/V s<br />
| Hall effect sensor<br />
| Hall effect sensor<br />
| 13(300K)*,20[1]<br />
| 13[2],20[1]<br />
| <br />
| <br />
| (1)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br />
| (1)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br />(2)http://www.springer.com/materials/book/978-3-642-04828-9<br />
|-
|-
| Melting point<br />
| Melting point<br />
| K<br />
| K<br />
| Thermal couple<br />
| Thermal couple<br />
| 2573<br />
| 2573[1]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />
|-
|-
| Lattice constants<br />
| Lattice constants<br />
| nm<br />
| nm<br />
| X-ray diffraction<br />
| X-ray diffraction<br />
| a=0.319;c=0.518<br />
| a=0.319;c=0.518[1]<br />a=0.3189;c=0.5185[2]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />(2)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]
|-
|-
| Thermal conductivity(300K)<br />
| Thermal conductivity(300K)<br />
| W/cm K<br />
| W/cm K<br />
| Time-domain thermoreflectance<br />
| Time-domain thermoreflectance<br />
| 2.3(semi insulating); 1.7(HVPE material,n=1x10<sup>17</sup>)<br />
| 2.3(semi insulating)[1]; 1.7(HVPE material,n=1x10<sup>17</sup>)[1]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br />
|-
|-
| Heat capacity<br />
| Heat capacity<br />
| J/mol K<br />
| J/mol K<br />
| Constant presure heating<br />
| Constant presure heating<br />
| 35.3<br />
| 35.3[1]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />
|-
|-
| Elastic modulus<br />
| Elastic modulus<br />
| GPa<br />
| GPa<br />
| Mechanical measurement<br />
| Mechanical measurement<br />
| 210<br />
| 210[1]<br />
| <br />
| <br />
| http://www.springer.com/materials/book/978-3-642-04828-9<br />
| (1)http://www.springer.com/materials/book/978-3-642-04828-9<br />
|-
|-
| Dislocation density<br />
| Dislocation density<br />
| /cm<sup>2</sup><br />
| /cm<sup>2</sup><br />
| TEM and XRD<br />
| TEM and XRD<br />
| ≤1 x 10<sup>8</sup>[1,2,5]<br/>5 x 10<sup>8</sup>-6 x 10<sup>8</sup>(for N type and undoped)[3]<br />8 x 10<sup>8</sup>(for semi insulating)[3]<br/>8 x 10<sup>7</sup>-9 x 10<sup>7</sup>(for N type and undoped)[4]
| ≤1 x 10<sup>8</sup>[1,2,5,7]<br/>5 x 10<sup>8</sup>-6 x 10<sup>8</sup>(for N type and undoped)[3]<br />8 x 10<sup>8</sup>(for semi insulating)[3]<br/>8 x 10<sup>7</sup>-9 x 10<sup>7</sup>(for N type and undoped)[4]<br/>5 x 10<sup>8</sup>-3 x 10<sup>7</sup>(for N type,Semi insulating and undoped)[6]
| <br />
| <br />
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-ULD-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(5)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-ULD-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(5)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(6)[http://www.rflambda.com/product_list.jsp?catalog=9081 RF-Lambda USA LLC]<br/>(7)[http://www.atecom.com.tw/product-info.php?id=32 Atecom Technology Co., Ltd.]
|-
|-
| Sheet carrier density<br />
| Sheet carrier density<br />
Line 255: Line 255:
| rowspan="4"|ohm-cm<br />
| rowspan="4"|ohm-cm<br />
| rowspan="4"|<br />
| rowspan="4"|<br />
| <0.05(Undoped)[1,7]<br />
| <0.05(Undoped)[1,7,11]<br />
| <br />
| <br />
| rowspan="4"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(4)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br/>(5)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(6)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-2.aspx MTI Corp.]<br/>(7)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]
| rowspan="4"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(4)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br/>(5)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(6)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-2.aspx MTI Corp.]<br/>(7)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]<br/>(8)[http://www.rflambda.com/product_list.jsp?catalog=9071 RF-Lambda USA LLC]<br/>(9)[http://www.rflambda.com/product_list.jsp?catalog=9081 RF-Lambda USA LLC]<br/>(10)[http://www.atecom.com.tw/product-info.php?id=32 Atecom Technology Co., Ltd.]<br/>(11)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Templates%20on%20Sapphire.pdf Kyma Technologies]
|-
|-
| <0.05(N type)[1,2,3,5]<br />
| <0.05(N type)[1,2,3,5,10],.001-.01[8]<br />
| <br />
| <br />
|-
|-
Line 265: Line 265:
| <br />
| <br />
|-
|-
| >10<sup>6</sup>(Semi insulating)[1,2,3,6]<br />
| >10<sup>6</sup>(Semi insulating)[1,2,3,6,10],10<sup>9</sup>-10<sup>12</sup>(Semi insulating)[9]<br />
| <br />
| <br />
|-
|-
Line 271: Line 271:
| rowspan="3"| /cm<sup>3</sup><br />
| rowspan="3"| /cm<sup>3</sup><br />
| rowspan="3"| SIMS<br />
| rowspan="3"| SIMS<br />
| ~10<sup>19</sup>(N type)[4]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[2]<br />3x10<sup>17</sup>(undoped)[2]
| ~10<sup>19</sup>(N type)[4]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[2]<br />~10<sup>18</sup>(N type)[6]<br/>10<sup>18</sup>(N type)[7]
|<br />
|<br />
| rowspan="2"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(3)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br/>(4)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(3)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br/>(4)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]<br/>(6)[http://www.rflambda.com/product_list.jsp?catalog=9071 RF-Lambda USA LLC]<br/>(7)[http://www.kymatech.com/products/materials/gan-sims-detail Kyma Technologies]
|-
|-
| ~10<sup>17</sup>(P type)[1]<br />10<sup>17</sup>-3x10<sup>18</sup>(P type)[3]
| ~10<sup>17</sup>(P type)[1]<br />10<sup>17</sup>-3x10<sup>18</sup>(P type)[3]<br/>5x10<sup>17</sup>(P type)[7]
| <br />
| <br />
|-
|-
| <2x10<sup>17</sup>(undoped)[5]
| 3x10<sup>17</sup>(undoped)[2]<br/><2x10<sup>17</sup>(undoped)[5]<br/>10<sup>16</sup>(undoped)[7]
| <br/>
| <br/>
|-
|-
Line 284: Line 284:
| rowspan="3"|um<br />
| rowspan="3"|um<br />
| rowspan="3"|Ellipsometry<br />
| rowspan="3"|Ellipsometry<br />
| 3-100(N type,undoped)[1,2,3,4,5]<br />
| 3-100(N type,undoped)[1,2,3,4,5,6]<br />
| <br />
| <br />
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]<br/>(6)[http://www.atecom.com.tw/product-info.php?id=32 Atecom Technology Co., Ltd.]
|-
|-
| 5-100(P type)[1]<br />
| 5-100(P type)[1]<br />
| <br />
| <br />
|-
|-
| 20-90(Semi insulating)[1,2,3]<br />
| 20-90(Semi insulating)[1,2,3,6]<br />
| <br />
| <br />
|-
|-
Line 311: Line 311:
| /cm<sup>2</sup><br />
| /cm<sup>2</sup><br />
| TEM and XRD<br />
| TEM and XRD<br />
| <5[1], <10[2]<br />
| <5[1,3], <10[2]<br />
| <br />
| <br />
| (1)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-2.aspx MTI Corp.]<br />(2)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]
| (1)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-2.aspx MTI Corp.]<br />(2)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]<br/>(3)[http://www.kymatech.com/documents/Specifications/Kyma%20Technologies%20-%20Specification%20Sheet%20-%20GaN%20Templates%20on%20Sapphire.pdf Kyma Technologies]
|-
|-
| Bow<br />
| Bow<br />
| um<br />
| um<br />
| SEM or AFM<br />
| SEM or AFM<br />
| 10-500<br />
| 10-500[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.rflambda.com/product_list.jsp?catalog=9071 RF-Lambda USA LLC]<br />
|-
|-
| Total thickness variation (TTV)<br />
| Total thickness variation (TTV)<br />
Line 339: Line 339:
| /K<br />
| /K<br />
| Thermal elaastic measurement<br />
| Thermal elaastic measurement<br />
| along a0:5.59x10<sup>-6</sup>; along c0:7.75x10<sup>-6</sup><br />
| along a0:5.59x10<sup>-6</sup>[1]; along c0:7.75x10<sup>-6</sup>[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br />
|-
|-
| Dielectric constant(300K)<br />
| Dielectric constant(300K)<br />
| <br />
| <br />
| Ellipsometry<br />
| Ellipsometry<br />
| along a0:10.4; along c0:9.5<br />
| along a0:10.4[1]; along c0:9.5[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br />
|-
|-
| Refractive index<br />
| Refractive index<br />
| <br />
| <br />
| Ellipsometry<br />
| Ellipsometry<br />
| 2.67 at 3.38eV<br />
| 2.67 at 3.38eV[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br />
|-
|-
| Electron Effective mass<br />
| Electron Effective mass<br />
| <br />
| <br />
| <br />
| <br />
| 0.22<br />
| 0.22[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.qualitymaterial.net/GaN-substrate.html Xiamen Powerway Advanced Material Co. Ltd.]<br />
|-
|-
| FWHM of(102)XRD arcsec<br />
| FWHM of(102)XRD arcsec<br />
| <br />
| <br />
| X-ray diffraction<br />
| X-ray diffraction<br />
| <250[1],~350[2],<300<br />
| <250[1],~350[2],<300[3]<br />
| <br />
| <br />
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(3)[http://www.rflambda.com/product_list.jsp?catalog=9071 RF-Lambda USA LLC]
|-
|-
| FWHM of(002)XRD arcsec<br />
| FWHM of(002)XRD arcsec<br />

Revision as of 17:23, 13 October 2013

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This Page is Under Construction

Figures of Merit for GaN substrates

Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
 eV
 PL
 3.44
http://www.springer.com/materials/book/978-3-642-04828-9
Electron mobility
 cm2/V s
 Hall effect sensor
 ~150(300K)[1]
(1)Ammono S. A.
Hole mobility
 cm2/V s
 Hall effect sensor
 13(300K)
http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
 K
 Thermal couple
 2573
http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518
http://www.springer.com/materials/book/978-3-642-04828-9
Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.2-2.5

Heat capacity
 J/mol K
 Constant presure heating
 35.3
http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
 GPa
 Mechanical measurement
 210

Dislocation density
 /cm2
 TEM and XRD
 ≤5 x 106
http://www.springer.com/materials/book/978-3-642-04828-9
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
0.1-1(Undoped)

<0.01(N type)
>106(Semi insulating)
Doping concentration
 /cm3
 SIMS
 ~1019(N type)[1]
(1)Ammono S. A.
N/A(P type)
Thickness
 um
 Ellipsometry
 200-475(N type)

475(Semi insulating)
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 A grade<=2; B grade>2

Bow
 um
 SEM or AFM
 <5

Total thickness variation (TTV)
 um
 AFM(preferred) and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 Ra<0.2;RMS<0.5(epi ready)

Thermal expansion coeff(300K)
 /K
 Thermal elastic measurement
 along a0:5.59x10-6; along c0:7.75x10-6

Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5

Refractive index
Ellipsometry
 2.67 at 3.38eV

Electron Effective mass

0.22

GaN template on sapphire Bandgap(300K)
 eV
 PL
 3.44[1,2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Electron mobility(300K)
 cm2/V s
 Hall effect sensor
 1350[1]
150(for n=1019)[2]
240(for n=1018)[2]
500(for n=1017)[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Hole mobility(300K)
 cm2/V s
 Hall effect sensor
 13[2],20[1]
(1)MTI Corp.
(2)http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
 K
 Thermal couple
 2573[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518[1]
a=0.3189;c=0.5185[2]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
(2)Xiamen Powerway Advanced Material Co. Ltd.
Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.3(semi insulating)[1]; 1.7(HVPE material,n=1x1017)[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Heat capacity
 J/mol K
 Constant presure heating
 35.3[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
 GPa
 Mechanical measurement
 210[1]
(1)http://www.springer.com/materials/book/978-3-642-04828-9
Dislocation density
 /cm2
 TEM and XRD
 ≤1 x 108[1,2,5,7]
5 x 108-6 x 108(for N type and undoped)[3]
8 x 108(for semi insulating)[3]
8 x 107-9 x 107(for N type and undoped)[4]
5 x 108-3 x 107(for N type,Semi insulating and undoped)[6]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Saint-Gobain Crystals-Photonic Materials
(5)Precision Micro-Optics LLC
(6)RF-Lambda USA LLC
(7)Atecom Technology Co., Ltd.
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
<0.05(Undoped)[1,7,11]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Precision Micro-Optics LLC
(4)MTI Corp.
(5)MTI Corp.
(6)MTI Corp.
(7)RF-Lambda USA LLC
(8)RF-Lambda USA LLC
(9)RF-Lambda USA LLC
(10)Atecom Technology Co., Ltd.
(11)Kyma Technologies
<0.05(N type)[1,2,3,5,10],.001-.01[8]
<1(P type)[1]
3-5(P type)[4]
>106(Semi insulating)[1,2,3,6,10],109-1012(Semi insulating)[9]
Carrier concentration
 /cm3
 SIMS
 ~1019(N type)[4]
1x1018-3x1018(N type)[2]
~1018(N type)[6]
1018(N type)[7]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
(4)MTI Corp.
(5)RF-Lambda USA LLC
(6)RF-Lambda USA LLC
(7)Kyma Technologies
~1017(P type)[1]
1017-3x1018(P type)[3]
5x1017(P type)[7]
3x1017(undoped)[2]
<2x1017(undoped)[5]
1016(undoped)[7]
Thickness(epilayer)
 um
 Ellipsometry
 3-100(N type,undoped)[1,2,3,4,5,6]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Precision Micro-Optics LLC
(5)RF-Lambda USA LLC
(6)Atecom Technology Co., Ltd.
5-100(P type)[1]
20-90(Semi insulating)[1,2,3,6]
Buffer layer(sapphire) thickness
 um
 Ellipsometry
 430[1,3],330[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 <5[1,3], <10[2]
(1)MTI Corp.
(2)RF-Lambda USA LLC
(3)Kyma Technologies
Bow
 um
 SEM or AFM
 10-500[1]
(1)RF-Lambda USA LLC
Total thickness variation (TTV)
 um
 AFM(prefered)and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 RMS~10[1],Ra<0.2;RMS<0.5(epi ready)
(1)MTI Corp.
Thermal expansion coeff(300K)
 /K
 Thermal elaastic measurement
 along a0:5.59x10-6[1]; along c0:7.75x10-6[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Dielectric constant(300K)
Ellipsometry
 along a0:10.4[1]; along c0:9.5[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Refractive index
Ellipsometry
 2.67 at 3.38eV[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
Electron Effective mass

0.22[1]
(1)Xiamen Powerway Advanced Material Co. Ltd.
FWHM of(102)XRD arcsec
X-ray diffraction
 <250[1],~350[2],<300[3]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
(3)RF-Lambda USA LLC
FWHM of(002)XRD arcsec
X-ray diffraction
 <150[1],~250[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
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