Line 181: | Line 181: | ||
| <br /> | | <br /> | ||
|- | |- | ||
| rowspan=" | | rowspan="32"| GaN template on sapphire | ||
| Bandgap(300K)<br /> | | Bandgap(300K)<br /> | ||
| eV<br /> | | eV<br /> | ||
Line 255: | Line 255: | ||
| rowspan="4"|ohm-cm<br /> | | rowspan="4"|ohm-cm<br /> | ||
| rowspan="4"|<br /> | | rowspan="4"|<br /> | ||
| <0.05(Undoped)[1]<br /> | | <0.05(Undoped)[1,7]<br /> | ||
| <br /> | | <br /> | ||
| rowspan="4"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC] | | rowspan="4"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(4)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br/>(5)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(6)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-2.aspx MTI Corp.]<br/>(7)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC] | ||
|- | |- | ||
| <0.05(N type)[1,2,3]<br /> | | <0.05(N type)[1,2,3,5]<br /> | ||
| <br /> | | <br /> | ||
|- | |- | ||
| <1(P type)[1]<br /> | | <1(P type)[1]<br />3-5(P type)[4] | ||
| <br /> | | <br /> | ||
|- | |- | ||
| >10<sup>6</sup>(Semi insulating)[1,2,3]<br /> | | >10<sup>6</sup>(Semi insulating)[1,2,3,6]<br /> | ||
| <br /> | | <br /> | ||
|- | |- | ||
| rowspan=" | | rowspan="3"| Carrier concentration<br /> | ||
| rowspan=" | | rowspan="3"| /cm<sup>3</sup><br /> | ||
| rowspan=" | | rowspan="3"| SIMS<br /> | ||
| ~10<sup>19</sup>(N type) | | ~10<sup>19</sup>(N type)[4]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[2]<br />3x10<sup>17</sup>(undoped)[2] | ||
|<br /> | |<br /> | ||
| rowspan="2"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials](3)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.] | | rowspan="2"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(3)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br/>(4)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC] | ||
|- | |- | ||
| ~10<sup>17</sup>(P type)[1]<br />10<sup>17</sup>-3x10<sup>18</sup>(P type)[3] | | ~10<sup>17</sup>(P type)[1]<br />10<sup>17</sup>-3x10<sup>18</sup>(P type)[3] | ||
| <br /> | | <br /> | ||
|- | |||
| <2x10<sup>17</sup>(undoped)[5] | |||
| <br/> | |||
|- | |- | ||
| rowspan="3"|Thickness(epilayer)<br /> | | rowspan="3"|Thickness(epilayer)<br /> | ||
| rowspan="3"|um<br /> | | rowspan="3"|um<br /> | ||
| rowspan="3"|Ellipsometry<br /> | | rowspan="3"|Ellipsometry<br /> | ||
| 3-100(N type,undoped)[1,2,3,4]<br /> | | 3-100(N type,undoped)[1,2,3,4,5]<br /> | ||
| <br /> | | <br /> | ||
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC] | | rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC] | ||
|- | |- | ||
| 5-100(P type)[1]<br /> | | 5-100(P type)[1]<br /> | ||
Line 294: | Line 297: | ||
| um<br /> | | um<br /> | ||
| Ellipsometry<br /> | | Ellipsometry<br /> | ||
| 430[1],330[2]<br /> | | 430[1,3],330[2]<br /> | ||
| <br /> | | <br /> | ||
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials] | | (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(3)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.] | ||
|- | |- | ||
| Misorientation<br /> | | Misorientation<br /> | ||
Line 308: | Line 311: | ||
| /cm<sup>2</sup><br /> | | /cm<sup>2</sup><br /> | ||
| TEM and XRD<br /> | | TEM and XRD<br /> | ||
| <10 | | <5[1], <10[2]<br /> | ||
| <br /> | | <br /> | ||
| (1)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-2.aspx MTI Corp.]<br />(2)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC] | |||
|- | |- | ||
| Bow<br /> | | Bow<br /> | ||
Line 329: | Line 332: | ||
| nm<br /> | | nm<br /> | ||
| Profilometer and AFM<br /> | | Profilometer and AFM<br /> | ||
| Ra<0.2;RMS<0.5(epi ready) | | RMS~10[1],Ra<0.2;RMS<0.5(epi ready)<br /> | ||
| <br /> | | <br /> | ||
| (1)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-5.aspx MTI Corp.]<br /> | |||
|- | |- | ||
| Thermal expansion coeff(300K)<br /> | | Thermal expansion coeff(300K)<br /> | ||
Line 364: | Line 367: | ||
| <br /> | | <br /> | ||
| X-ray diffraction<br /> | | X-ray diffraction<br /> | ||
| <250[1], <300<br /> | | <250[1],~350[2],<300<br /> | ||
| <br /> | | <br /> | ||
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br /> | | (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.] | ||
|- | |- | ||
| FWHM of(002)XRD arcsec<br /> | | FWHM of(002)XRD arcsec<br /> | ||
| <br /> | | <br /> | ||
| X-ray diffraction<br /> | | X-ray diffraction<br /> | ||
| <150[1]<br /> | | <150[1],~250[2]<br /> | ||
| <br /> | | <br /> | ||
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br /> | | (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.] | ||
|} | |} | ||
[[category:MOST literature reviews]] | [[category:MOST literature reviews]] |
Revision as of 15:24, 13 October 2013
This Page is Under Construction
Figures of Merit for GaN substrates
Bulk Type | Property | Units | Characterization Method | Industry range | Goal | Reference/hyperlink |
---|---|---|---|---|---|---|
GaN freestanding substrate | Bandgap(300K) |
eV |
PL |
3.44 |
http://www.springer.com/materials/book/978-3-642-04828-9 | |
Electron mobility |
cm2/V s |
Hall effect sensor |
~150(300K)[1] |
(1)Ammono S. A. | ||
Hole mobility |
cm2/V s |
Hall effect sensor |
13(300K) |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Melting point |
K |
Thermal couple |
2573 |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518 |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Thermal conductivity(300K) |
W/cm K |
Time-domain thermoreflectance |
2.2-2.5 |
|||
Heat capacity |
J/mol K |
Constant presure heating |
35.3 |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Elastic modulus |
GPa |
Mechanical measurement |
210 |
|||
Dislocation density |
/cm2 |
TEM and XRD |
≤5 x 106 |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Sheet carrier density |
/cm2 |
SIMS |
N/A |
|||
Sheet resistance/Resistivity |
ohm-cm |
0.1-1(Undoped) |
||||
<0.01(N type) |
||||||
>106(Semi insulating) |
||||||
Doping concentration |
/cm3 |
SIMS |
~1019(N type)[1] |
(1)Ammono S. A. | ||
N/A(P type) |
||||||
Thickness |
um |
Ellipsometry |
200-475(N type) |
|||
475(Semi insulating) |
||||||
Misorientation |
deg |
SEM and TEM |
On demand |
|||
Macro defect density |
/cm2 |
TEM and XRD |
A grade<=2; B grade>2 |
|||
Bow |
um |
SEM or AFM |
<5 |
|||
Total thickness variation (TTV) |
um |
AFM(preferred) and SEM |
<10 |
|||
Surface roughness |
nm |
Profilometer and AFM |
Ra<0.2;RMS<0.5(epi ready) |
|||
Thermal expansion coeff(300K) |
/K |
Thermal elastic measurement |
along a0:5.59x10-6; along c0:7.75x10-6 |
|||
Dielectric constant(300K) |
Ellipsometry |
along a0:10.4; along c0:9.5 |
||||
Refractive index |
Ellipsometry |
2.67 at 3.38eV |
||||
Electron Effective mass |
0.22 |
|||||
GaN template on sapphire | Bandgap(300K) |
eV |
PL |
3.44 |
http://www.springer.com/materials/book/978-3-642-04828-9 | |
Electron mobility |
cm2/V s |
Hall effect sensor |
150(300K)* |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Hole mobility |
cm2/V s |
Hall effect sensor |
13(300K)*,20[1] |
(1)MTI Corp. | ||
Melting point |
K |
Thermal couple |
2573 |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518 |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Thermal conductivity(300K) |
W/cm K |
Time-domain thermoreflectance |
2.3(semi insulating); 1.7(HVPE material,n=1x1017) |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Heat capacity |
J/mol K |
Constant presure heating |
35.3 |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Elastic modulus |
GPa |
Mechanical measurement |
210 |
http://www.springer.com/materials/book/978-3-642-04828-9 | ||
Dislocation density |
/cm2 |
TEM and XRD |
≤1 x 108[1,2,5] 5 x 108-6 x 108(for N type and undoped)[3] 8 x 108(for semi insulating)[3] 8 x 107-9 x 107(for N type and undoped)[4] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Saint-Gobain Crystals-Photonic Materials (4)Saint-Gobain Crystals-Photonic Materials (5)Precision Micro-Optics LLC | ||
Sheet carrier density |
/cm2 |
SIMS |
N/A |
|||
Sheet resistance/Resistivity |
ohm-cm |
<0.05(Undoped)[1,7] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Precision Micro-Optics LLC (4)MTI Corp. (5)MTI Corp. (6)MTI Corp. (7)RF-Lambda USA LLC | |||
<0.05(N type)[1,2,3,5] |
||||||
<1(P type)[1] 3-5(P type)[4] |
||||||
>106(Semi insulating)[1,2,3,6] |
||||||
Carrier concentration |
/cm3 |
SIMS |
~1019(N type)[4] 1x1018-3x1018(N type)[2] 3x1017(undoped)[2] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Saint-Gobain Crystals-Photonic Materials (3)MTI Corp. (4)MTI Corp. (5)RF-Lambda USA LLC | ||
~1017(P type)[1] 1017-3x1018(P type)[3] |
||||||
<2x1017(undoped)[5] | ||||||
Thickness(epilayer) |
um |
Ellipsometry |
3-100(N type,undoped)[1,2,3,4,5] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Anhui Haibei Import & Export Co., Ltd. (3)Saint-Gobain Crystals-Photonic Materials (4)Precision Micro-Optics LLC (5)RF-Lambda USA LLC | ||
5-100(P type)[1] |
||||||
20-90(Semi insulating)[1,2,3] |
||||||
Buffer layer(sapphire) thickness |
um |
Ellipsometry |
430[1,3],330[2] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)Saint-Gobain Crystals-Photonic Materials (3)MTI Corp. | ||
Misorientation |
deg |
SEM and TEM |
On demand |
|||
Macro defect density |
/cm2 |
TEM and XRD |
<5[1], <10[2] |
(1)MTI Corp. (2)RF-Lambda USA LLC | ||
Bow |
um |
SEM or AFM |
10-500 |
|||
Total thickness variation (TTV) |
um |
AFM(prefered)and SEM |
<10 |
|||
Surface roughness |
nm |
Profilometer and AFM |
RMS~10[1],Ra<0.2;RMS<0.5(epi ready) |
(1)MTI Corp. | ||
Thermal expansion coeff(300K) |
/K |
Thermal elaastic measurement |
along a0:5.59x10-6; along c0:7.75x10-6 |
|||
Dielectric constant(300K) |
Ellipsometry |
along a0:10.4; along c0:9.5 |
||||
Refractive index |
Ellipsometry |
2.67 at 3.38eV |
||||
Electron Effective mass |
0.22 |
|||||
FWHM of(102)XRD arcsec |
X-ray diffraction |
<250[1],~350[2],<300 |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)MTI Corp. | |||
FWHM of(002)XRD arcsec |
X-ray diffraction |
<150[1],~250[2] |
(1)Xiamen Powerway Advanced Material Co., Ltd. (2)MTI Corp. |