Line 181: Line 181:
| <br />
| <br />
|-
|-
| rowspan="31"| GaN template on sapphire
| rowspan="32"| GaN template on sapphire
| Bandgap(300K)<br />
| Bandgap(300K)<br />
| eV<br />
| eV<br />
Line 255: Line 255:
| rowspan="4"|ohm-cm<br />
| rowspan="4"|ohm-cm<br />
| rowspan="4"|<br />
| rowspan="4"|<br />
| <0.05(Undoped)[1]<br />
| <0.05(Undoped)[1,7]<br />
| <br />
| <br />
| rowspan="4"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]
| rowspan="4"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(4)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br/>(5)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(6)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-2.aspx MTI Corp.]<br/>(7)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]
|-
|-
| <0.05(N type)[1,2,3]<br />
| <0.05(N type)[1,2,3,5]<br />
| <br />
| <br />
|-
|-
| <1(P type)[1]<br />
| <1(P type)[1]<br />3-5(P type)[4]
| <br />
| <br />
|-
|-
| >10<sup>6</sup>(Semi insulating)[1,2,3]<br />
| >10<sup>6</sup>(Semi insulating)[1,2,3,6]<br />
| <br />
| <br />
|-
|-
| rowspan="2"| Doping concentration<br />
| rowspan="3"| Carrier concentration<br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="3"| /cm<sup>3</sup><br />
| rowspan="2"| SIMS<br />
| rowspan="3"| SIMS<br />
| ~10<sup>19</sup>(N type)*<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[2]<br />3x10<sup>17</sup>(undoped)[2]
| ~10<sup>19</sup>(N type)[4]<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[2]<br />3x10<sup>17</sup>(undoped)[2]
|<br />
|<br />
| rowspan="2"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials](3)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]
| rowspan="2"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(3)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-3.aspx MTI Corp.]<br/>(4)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]
|-
|-
| ~10<sup>17</sup>(P type)[1]<br />10<sup>17</sup>-3x10<sup>18</sup>(P type)[3]
| ~10<sup>17</sup>(P type)[1]<br />10<sup>17</sup>-3x10<sup>18</sup>(P type)[3]
| <br />
| <br />
|-
| <2x10<sup>17</sup>(undoped)[5]
| <br/>
|-
|-
| rowspan="3"|Thickness(epilayer)<br />
| rowspan="3"|Thickness(epilayer)<br />
| rowspan="3"|um<br />
| rowspan="3"|um<br />
| rowspan="3"|Ellipsometry<br />
| rowspan="3"|Ellipsometry<br />
| 3-100(N type,undoped)[1,2,3,4]<br />
| 3-100(N type,undoped)[1,2,3,4,5]<br />
| <br />
| <br />
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.pmoptics.com/gallium_nitride.html Precision Micro-Optics LLC]<br/>(5)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]
|-
|-
| 5-100(P type)[1]<br />
| 5-100(P type)[1]<br />
Line 294: Line 297:
| um<br />
| um<br />
| Ellipsometry<br />
| Ellipsometry<br />
| 430[1],330[2]<br />
| 430[1,3],330[2]<br />
| <br />
| <br />
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(3)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]
|-
|-
| Misorientation<br />
| Misorientation<br />
Line 308: Line 311:
| /cm<sup>2</sup><br />
| /cm<sup>2</sup><br />
| TEM and XRD<br />
| TEM and XRD<br />
| <10<br />
| <5[1], <10[2]<br />
| <br />
| <br />
| <br />
| (1)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-2.aspx MTI Corp.]<br />(2)[http://www.rflambda.com/pdf/gantemplates/GT.005.02.UD.B.2.pdf RF-Lambda USA LLC]
|-
|-
| Bow<br />
| Bow<br />
Line 329: Line 332:
| nm<br />
| nm<br />
| Profilometer and AFM<br />
| Profilometer and AFM<br />
| Ra<0.2;RMS<0.5(epi ready)<br />
| RMS~10[1],Ra<0.2;RMS<0.5(epi ready)<br />
| <br />
| <br />
| <br />
| (1)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-5.aspx MTI Corp.]<br />
|-
|-
| Thermal expansion coeff(300K)<br />
| Thermal expansion coeff(300K)<br />
Line 364: Line 367:
| <br />
| <br />
| X-ray diffraction<br />
| X-ray diffraction<br />
| <250[1], <300<br />
| <250[1],~350[2],<300<br />
| <br />
| <br />
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]
|-
|-
| FWHM of(002)XRD arcsec<br />
| FWHM of(002)XRD arcsec<br />
| <br />
| <br />
| X-ray diffraction<br />
| X-ray diffraction<br />
| <150[1]<br />
| <150[1],~250[2]<br />
| <br />
| <br />
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.mtixtl.com/ganepitaxialtemplateonsapphirecplanentypeundoped2x5micron-4-1-1.aspx MTI Corp.]
|}
|}


[[category:MOST literature reviews]]
[[category:MOST literature reviews]]

Revision as of 15:24, 13 October 2013

This Page is Under Construction

Figures of Merit for GaN substrates

Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
eV
PL
3.44

http://www.springer.com/materials/book/978-3-642-04828-9
Electron mobility
cm2/V s
Hall effect sensor
~150(300K)[1]

(1)Ammono S. A.
Hole mobility
cm2/V s
Hall effect sensor
13(300K)

http://www.springer.com/materials/book/978-3-642-04828-9
Melting point
K
Thermal couple
2573

http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
nm
X-ray diffraction
a=0.319;c=0.518

http://www.springer.com/materials/book/978-3-642-04828-9
Thermal conductivity(300K)
W/cm K
Time-domain thermoreflectance
2.2-2.5


Heat capacity
J/mol K
Constant presure heating
35.3

http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
GPa
Mechanical measurement
210


Dislocation density
/cm2
TEM and XRD
≤5 x 106

http://www.springer.com/materials/book/978-3-642-04828-9
Sheet carrier density
/cm2
SIMS
N/A


Sheet resistance/Resistivity
ohm-cm

0.1-1(Undoped)


<0.01(N type)

>106(Semi insulating)

Doping concentration
/cm3
SIMS
~1019(N type)[1]

(1)Ammono S. A.
N/A(P type)

Thickness
um
Ellipsometry
200-475(N type)


475(Semi insulating)

Misorientation
deg
SEM and TEM
On demand


Macro defect density
/cm2
TEM and XRD
A grade<=2; B grade>2


Bow
um
SEM or AFM
<5


Total thickness variation (TTV)
um
AFM(preferred) and SEM
<10


Surface roughness
nm
Profilometer and AFM
Ra<0.2;RMS<0.5(epi ready)


Thermal expansion coeff(300K)
/K
Thermal elastic measurement
along a0:5.59x10-6; along c0:7.75x10-6


Dielectric constant(300K)

Ellipsometry
along a0:10.4; along c0:9.5


Refractive index

Ellipsometry
2.67 at 3.38eV


Electron Effective mass


0.22


GaN template on sapphire Bandgap(300K)
eV
PL
3.44

http://www.springer.com/materials/book/978-3-642-04828-9
Electron mobility
cm2/V s
Hall effect sensor
150(300K)*

http://www.springer.com/materials/book/978-3-642-04828-9
Hole mobility
cm2/V s
Hall effect sensor
13(300K)*,20[1]

(1)MTI Corp.
Melting point
K
Thermal couple
2573

http://www.springer.com/materials/book/978-3-642-04828-9
Lattice constants
nm
X-ray diffraction
a=0.319;c=0.518

http://www.springer.com/materials/book/978-3-642-04828-9
Thermal conductivity(300K)
W/cm K
Time-domain thermoreflectance
2.3(semi insulating); 1.7(HVPE material,n=1x1017)

http://www.springer.com/materials/book/978-3-642-04828-9
Heat capacity
J/mol K
Constant presure heating
35.3

http://www.springer.com/materials/book/978-3-642-04828-9
Elastic modulus
GPa
Mechanical measurement
210

http://www.springer.com/materials/book/978-3-642-04828-9
Dislocation density
/cm2
TEM and XRD
≤1 x 108[1,2,5]
5 x 108-6 x 108(for N type and undoped)[3]
8 x 108(for semi insulating)[3]
8 x 107-9 x 107(for N type and undoped)[4]

(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Saint-Gobain Crystals-Photonic Materials
(5)Precision Micro-Optics LLC
Sheet carrier density
/cm2
SIMS
N/A


Sheet resistance/Resistivity
ohm-cm

<0.05(Undoped)[1,7]

(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Precision Micro-Optics LLC
(4)MTI Corp.
(5)MTI Corp.
(6)MTI Corp.
(7)RF-Lambda USA LLC
<0.05(N type)[1,2,3,5]

<1(P type)[1]
3-5(P type)[4]

>106(Semi insulating)[1,2,3,6]

Carrier concentration
/cm3
SIMS
~1019(N type)[4]
1x1018-3x1018(N type)[2]
3x1017(undoped)[2]

(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
(4)MTI Corp.
(5)RF-Lambda USA LLC
~1017(P type)[1]
1017-3x1018(P type)[3]

<2x1017(undoped)[5]
Thickness(epilayer)
um
Ellipsometry
3-100(N type,undoped)[1,2,3,4,5]

(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Precision Micro-Optics LLC
(5)RF-Lambda USA LLC
5-100(P type)[1]

20-90(Semi insulating)[1,2,3]

Buffer layer(sapphire) thickness
um
Ellipsometry
430[1,3],330[2]

(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
(3)MTI Corp.
Misorientation
deg
SEM and TEM
On demand


Macro defect density
/cm2
TEM and XRD
<5[1], <10[2]

(1)MTI Corp.
(2)RF-Lambda USA LLC
Bow
um
SEM or AFM
10-500


Total thickness variation (TTV)
um
AFM(prefered)and SEM
<10


Surface roughness
nm
Profilometer and AFM
RMS~10[1],Ra<0.2;RMS<0.5(epi ready)

(1)MTI Corp.
Thermal expansion coeff(300K)
/K
Thermal elaastic measurement
along a0:5.59x10-6; along c0:7.75x10-6


Dielectric constant(300K)

Ellipsometry
along a0:10.4; along c0:9.5


Refractive index

Ellipsometry
2.67 at 3.38eV


Electron Effective mass


0.22


FWHM of(102)XRD arcsec

X-ray diffraction
<250[1],~350[2],<300

(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
FWHM of(002)XRD arcsec

X-ray diffraction
<150[1],~250[2]

(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)MTI Corp.
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