Line 241: Line 241:
| /cm<sup>2</sup><br />
| /cm<sup>2</sup><br />
| TEM and XRD<br />
| TEM and XRD<br />
| ≤1 x 10<sup>8</sup>[1,2]<br />
| ≤1 x 10<sup>8</sup>[1,2]<br/>5 x 10<sup>8</sup>-6 x 10<sup>8</sup>(for N type and undoped)[3]<br />8 x 10<sup>8</sup>(for semi insulating)[3]<br/>8 x 10<sup>7</sup>-9 x 10<sup>7</sup>(for N type and undoped)[4]
| <br />
| <br />
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]<br/>(4)[http://www.photonic.saint-gobain.com/GaN-ULD-Templates.aspx Saint-Gobain Crystals-Photonic Materials]
|-
|-
| Sheet carrier density<br />
| Sheet carrier density<br />
Line 271: Line 271:
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| SIMS<br />
| rowspan="2"| SIMS<br />
| ~10<sup>19</sup>(N type)*<br />
| ~10<sup>19</sup>(N type)*<br/>1x10<sup>18</sup>-3x10<sup>18</sup>(N type)[2]<br />3x10<sup>17</sup>(undoped)[2]
|<br />
|<br />
| rowspan="2"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />
| rowspan="2"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]
|-
|-
| ~10<sup>17</sup>(P type)[1]<br />
| ~10<sup>17</sup>(P type)[1]<br />
Line 281: Line 281:
| rowspan="3"|um<br />
| rowspan="3"|um<br />
| rowspan="3"|Ellipsometry<br />
| rowspan="3"|Ellipsometry<br />
| 3-100(N type,undoped)[1,2]<br />
| 3-100(N type,undoped)[1,2,3]<br />
| <br />
| <br />
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]<br/>(3)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]
|-
|-
| 5-100(P type)[1]<br />
| 5-100(P type)[1]<br />
| <br />
| <br />
|-
|-
| 20-90(Semi insulating)[1,2]<br />
| 20-90(Semi insulating)[1,2,3]<br />
| <br />
| <br />
|-
|-
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| um<br />
| um<br />
| Ellipsometry<br />
| Ellipsometry<br />
| 430[1]<br />
| 430[1],330[2]<br />
| <br />
| <br />
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://www.photonic.saint-gobain.com/GaN-Standard-Templates.aspx Saint-Gobain Crystals-Photonic Materials]
|-
|-
| Misorientation<br />
| Misorientation<br />

Revision as of 23:47, 12 October 2013

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Figures of Merit for GaN substrates

Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
 eV
 PL
 3.44

Electron mobility
 cm2/V s
 Hall effect sensor
 ~150(300K)[1]
(1)Ammono S. A.
Hole mobility
 cm2/V s
 Hall effect sensor
 13(300K)

Melting point
 K
 Thermal couple
 2573

Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518

Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.2-2.5

Heat capacity
 J/mol K
 Constant presure heating
 35.3

Elastic modulus
 GPa
 Mechanical measurement
 210

Dislocation density
 /cm2
 TEM and XRD
 ≤5 x 106

Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
0.1-1(Undoped)

<0.01(N type)
>106(Semi insulating)
Doping concentration
 /cm3
 SIMS
 ~1019(N type)[1]
(1)Ammono S. A.
N/A(P type)
Thickness
 um
 Ellipsometry
 200-475(N type)

475(Semi insulating)
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 A grade<=2; B grade>2

Bow
 um
 SEM or AFM
 <5

Total thickness variation (TTV)
 um
 AFM(preferred) and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 Ra<0.2;RMS<0.5(epi ready)

Thermal expansion coeff(300K)
 /K
 Thermal elastic measurement
 along a0:5.59x10-6; along c0:7.75x10-6

Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5

Refractive index
Ellipsometry
 2.67 at 3.38eV

Electron Effective mass

0.22

GaN template on sapphire Bandgap(300K)
 eV
 PL
 3.44

Electron mobility
 cm2/V s
 Hall effect sensor
 150(300K)*

Hole mobility
 cm2/V s
 Hall effect sensor
 13(300K)

Melting point
 K
 Thermal couple
 2573

Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518

Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.3(semi insulating); 1.7(HVPE material,n=1x1017)

Heat capacity
 J/mol K
 Constant presure heating
 35.3

Elastic modulus
 GPa
 Mechanical measurement
 210

Dislocation density
 /cm2
 TEM and XRD
 ≤1 x 108[1,2]
5 x 108-6 x 108(for N type and undoped)[3]
8 x 108(for semi insulating)[3]
8 x 107-9 x 107(for N type and undoped)[4]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
(4)Saint-Gobain Crystals-Photonic Materials
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
<0.05(Undoped)[1]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
<0.05(N type)[1,2]
<1(P type)[1]
>106(Semi insulating)[1,2]
Doping concentration
 /cm3
 SIMS
 ~1019(N type)*
1x1018-3x1018(N type)[2]
3x1017(undoped)[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
~1017(P type)[1]
Thickness(epilayer)
 um
 Ellipsometry
 3-100(N type,undoped)[1,2,3]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
(3)Saint-Gobain Crystals-Photonic Materials
5-100(P type)[1]
20-90(Semi insulating)[1,2,3]
Buffer layer(sapphire) thickness
 um
 Ellipsometry
 430[1],330[2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Saint-Gobain Crystals-Photonic Materials
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 <10

Bow
 um
 SEM or AFM
 10-500

Total thickness variation (TTV)
 um
 AFM(prefered)and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 Ra<0.2;RMS<0.5(epi ready)

Thermal expansion coeff(300K)
 /K
 Thermal elaastic measurement
 along a0:5.59x10-6; along c0:7.75x10-6

Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5

Refractive index
Ellipsometry
 2.67 at 3.38eV

Electron Effective mass

0.22

FWHM of(102)XRD arcsec
X-ray diffraction
 <250[1], <300
(1)Xiamen Powerway Advanced Material Co., Ltd.
FWHM of(002)XRD arcsec
X-ray diffraction
 <150[1]
(1)Xiamen Powerway Advanced Material Co., Ltd.
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