Line 25: Line 25:
| cm<sup>2</sup>/V s<br />
| cm<sup>2</sup>/V s<br />
| Hall effect sensor<br />
| Hall effect sensor<br />
| 150(300K)<br />
| ~150(300K)[1]<br />
| <br />
| <br />
| <br />
| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />
|-
|-
| Hole mobility<br />
| Hole mobility<br />
Line 101: Line 101:
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| SIMS<br />
| rowspan="2"| SIMS<br />
| ~10<sup>19</sup>(N type)<br />
| ~10<sup>19</sup>(N type)[1]<br />
|<br />
|<br />
| rowspan="2"| <br />
| rowspan="2"| (1)[http://ammono.com/files/products/Ammono_GaN_High-carrier-concentration_n-type_substrates_v_20110906.pdf Ammono S. A.]<br />
|-
|-
| N/A(P type)<br />
| N/A(P type)<br />
Line 181: Line 181:
| <br />
| <br />
|-
|-
| rowspan="29"| GaN template on sapphire
| rowspan="31"| GaN template on sapphire
| Bandgap(300K)<br />
| Bandgap(300K)<br />
| eV<br />
| eV<br />
Line 192: Line 192:
| cm<sup>2</sup>/V s<br />
| cm<sup>2</sup>/V s<br />
| Hall effect sensor<br />
| Hall effect sensor<br />
| 150(300K)<br />
| 150(300K)*<br />
| <br />
| <br />
| <br />
| <br />
Line 241: Line 241:
| /cm<sup>2</sup><br />
| /cm<sup>2</sup><br />
| TEM and XRD<br />
| TEM and XRD<br />
| ≤1 x 10<sup>8</sup><br />
| ≤1 x 10<sup>8</sup>[1,2]<br />
| <br />
| <br />
| <br />
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]
|-
|-
| Sheet carrier density<br />
| Sheet carrier density<br />
Line 255: Line 255:
| rowspan="4"|ohm-cm<br />
| rowspan="4"|ohm-cm<br />
| rowspan="4"|<br />
| rowspan="4"|<br />
| <0.05(Undoped)<br />
| <0.05(Undoped)[1]<br />
| <br />
| <br />
| rowspan="4"|<br />
| rowspan="4"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]
|-
|-
| <0.05(N type)<br />
| <0.05(N type)[1,2]<br />
| <br />
| <br />
|-
|-
| <1(P type)<br />
| <1(P type)[1]<br />
| <br />
| <br />
|-
|-
| >10<sup>6</sup>(Semi insulating)<br />
| >10<sup>6</sup>(Semi insulating)[1,2]<br />
| <br />
| <br />
|-
|-
Line 271: Line 271:
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| SIMS<br />
| rowspan="2"| SIMS<br />
| ~10<sup>19</sup>(N type)<br />
| ~10<sup>19</sup>(N type)*<br />
|<br />
|<br />
| rowspan="2"| <br />
| rowspan="2"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.] <br />
|-
|-
| ~10<sup>17</sup>(P type)<br />
| ~10<sup>17</sup>(P type)[1]<br />
| <br />
| <br />
|-
|-
Line 281: Line 281:
| rowspan="3"|um<br />
| rowspan="3"|um<br />
| rowspan="3"|Ellipsometry<br />
| rowspan="3"|Ellipsometry<br />
| 3-100(N type,undoped)<br />
| 3-100(N type,undoped)[1,2]<br />
| <br />
| <br />
| rowspan="3"|<br />
| rowspan="3"|(1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />(2)[http://haibeiflavor.en.alibaba.com/contactinfo.html?accountId=206042858 Anhui Haibei Import & Export Co., Ltd.]
|-
|-
| 5-100(P type)<br />
| 5-100(P type)[1]<br />
| <br />
| <br />
|-
|-
| 20-90(Semi insulating)<br />
| 20-90(Semi insulating)[1,2]<br />
| <br />
| <br />
|-
|-
Line 294: Line 294:
| um<br />
| um<br />
| Ellipsometry<br />
| Ellipsometry<br />
| 430<br />
| 430[1]<br />
| <br />
| <br />
| <br />
| (1)[http://www.powerwaywafer.com/GaN-Templates.html Xiamen Powerway Advanced Material Co., Ltd.]<br />
|-
|-
| Misorientation<br />
| Misorientation<br />
Line 364: Line 364:
| <br />
| <br />
| X-ray diffraction<br />
| X-ray diffraction<br />
| <300<br />
| <250[1], <300<br />
| <br />
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />
|-
| FWHM of(002)XRD arcsec<br />
| <br />
| <br />
| X-ray diffraction<br />
| <150[1]<br />
| <br />
| <br />
| (1)[http://www.gantemplate.com/2013/08/xrd-rocking-curve-fwhm-for-your-ganaln.html Xiamen Powerway Advanced Material Co., Ltd.]<br />
|}
|}


[[category:MOST literature reviews]]
[[category:MOST literature reviews]]

Revision as of 23:08, 12 October 2013

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Figures of Merit for GaN substrates

Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
 eV
 PL
 3.44

Electron mobility
 cm2/V s
 Hall effect sensor
 ~150(300K)[1]
(1)Ammono S. A.
Hole mobility
 cm2/V s
 Hall effect sensor
 13(300K)

Melting point
 K
 Thermal couple
 2573

Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518

Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.2-2.5

Heat capacity
 J/mol K
 Constant presure heating
 35.3

Elastic modulus
 GPa
 Mechanical measurement
 210

Dislocation density
 /cm2
 TEM and XRD
 ≤5 x 106

Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
0.1-1(Undoped)

<0.01(N type)
>106(Semi insulating)
Doping concentration
 /cm3
 SIMS
 ~1019(N type)[1]
(1)Ammono S. A.
N/A(P type)
Thickness
 um
 Ellipsometry
 200-475(N type)

475(Semi insulating)
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 A grade<=2; B grade>2

Bow
 um
 SEM or AFM
 <5

Total thickness variation (TTV)
 um
 AFM(preferred) and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 Ra<0.2;RMS<0.5(epi ready)

Thermal expansion coeff(300K)
 /K
 Thermal elastic measurement
 along a0:5.59x10-6; along c0:7.75x10-6

Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5

Refractive index
Ellipsometry
 2.67 at 3.38eV

Electron Effective mass

0.22

GaN template on sapphire Bandgap(300K)
 eV
 PL
 3.44

Electron mobility
 cm2/V s
 Hall effect sensor
 150(300K)*

Hole mobility
 cm2/V s
 Hall effect sensor
 13(300K)

Melting point
 K
 Thermal couple
 2573

Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518

Thermal conductivity(300K)
 W/cm K
 Time-domain thermoreflectance
 2.3(semi insulating); 1.7(HVPE material,n=1x1017)

Heat capacity
 J/mol K
 Constant presure heating
 35.3

Elastic modulus
 GPa
 Mechanical measurement
 210

Dislocation density
 /cm2
 TEM and XRD
 ≤1 x 108[1,2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
Sheet carrier density
 /cm2
 SIMS
 N/A

Sheet resistance/Resistivity
 ohm-cm
<0.05(Undoped)[1]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
<0.05(N type)[1,2]
<1(P type)[1]
>106(Semi insulating)[1,2]
Doping concentration
 /cm3
 SIMS
 ~1019(N type)*
(1)Xiamen Powerway Advanced Material Co., Ltd.
~1017(P type)[1]
Thickness(epilayer)
 um
 Ellipsometry
 3-100(N type,undoped)[1,2]
(1)Xiamen Powerway Advanced Material Co., Ltd.
(2)Anhui Haibei Import & Export Co., Ltd.
5-100(P type)[1]
20-90(Semi insulating)[1,2]
Buffer layer(sapphire) thickness
 um
 Ellipsometry
 430[1]
(1)Xiamen Powerway Advanced Material Co., Ltd.
Misorientation
 deg
 SEM and TEM
 On demand

Macro defect density
 /cm2
 TEM and XRD
 <10

Bow
 um
 SEM or AFM
 10-500

Total thickness variation (TTV)
 um
 AFM(prefered)and SEM
 <10

Surface roughness
 nm
 Profilometer and AFM
 Ra<0.2;RMS<0.5(epi ready)

Thermal expansion coeff(300K)
 /K
 Thermal elaastic measurement
 along a0:5.59x10-6; along c0:7.75x10-6

Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5

Refractive index
Ellipsometry
 2.67 at 3.38eV

Electron Effective mass

0.22

FWHM of(102)XRD arcsec
X-ray diffraction
 <250[1], <300
(1)Xiamen Powerway Advanced Material Co., Ltd.
FWHM of(002)XRD arcsec
X-ray diffraction
 <150[1]
(1)Xiamen Powerway Advanced Material Co., Ltd.
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