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| Buffer layer(sapphire) thickness<br /> | |||
| um<br /> | |||
| Ellipsometry<br /> | |||
| 430<br /> | |||
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Revision as of 19:21, 12 October 2013
This Page is Under Construction
Figures of Merit for GaN substrates
| Bulk Type | Property | Units | Characterization Method | Industry range | Goal | Reference/hyperlink |
|---|---|---|---|---|---|---|
| GaN freestanding substrate | Bandgap(300K) |
eV |
PL |
3.44 |
||
| Electron mobility |
cm2/V s |
Hall effect sensor |
150(300K) |
|||
| Hole mobility |
cm2/V s |
Hall effect sensor |
13(300K) |
|||
| Melting point |
K |
Thermal couple |
2573 |
|||
| Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518 |
|||
| Thermal conductivity(300K) |
W/cm K |
Time-domain thermoreflectance |
2.2-2.5 |
|||
| Heat capacity |
J/mol K |
Constant presure heating |
35.3 |
|||
| Elastic modulus |
GPa |
Mechanical measurement |
210 |
|||
| Dislocation density |
/cm2 |
TEM and XRD |
≤5 x 106 |
|||
| Sheet carrier density |
/cm2 |
SIMS |
N/A |
|||
| Sheet resistance/Resistivity |
ohm-cm |
0.1-1(Undoped) |
||||
| <0.01(N type) |
||||||
| >106(Semi insulating) |
||||||
| Doping concentration |
/cm3 |
SIMS |
~1019(N type) |
|||
| N/A(P type) |
||||||
| Thickness |
um |
Ellipsometry |
200-475(N type) |
|||
| 475(Semi insulating) |
||||||
| Misorientation |
deg |
SEM and TEM |
On demand |
|||
| Macro defect density |
/cm2 |
TEM and XRD |
A grade<=2; B grade>2 |
|||
| Bow |
um |
SEM or AFM |
<5 |
|||
| Total thickness variation (TTV) |
um |
AFM(preferred) and SEM |
<10 |
|||
| Surface roughness |
nm |
Profilometer and AFM |
Ra<0.2;RMS<0.5(epi ready) |
|||
| Thermal expansion coeff(300K) |
/K |
Thermal elastic measurement |
along a0:5.59x10-6; along c0:7.75x10-6 |
|||
| Dielectric constant(300K) |
Ellipsometry |
along a0:10.4; along c0:9.5 |
||||
| Refractive index |
Ellipsometry |
2.67 at 3.38eV |
||||
| Electron Effective mass |
0.22 |
|||||
| GaN template on sapphire | Bandgap(300K) |
eV |
PL |
3.44 |
||
| Electron mobility |
cm2/V s |
Hall effect sensor |
150(300K) |
|||
| Hole mobility |
cm2/V s |
Hall effect sensor |
13(300K) |
|||
| Melting point |
K |
Thermal couple |
2573 |
|||
| Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518 |
|||
| Thermal conductivity(300K) |
W/cm K |
Time-domain thermoreflectance |
2.3(semi insulating); 1.7(HVPE material,n=1x1017) |
|||
| Heat capacity |
J/mol K |
Constant presure heating |
35.3 |
|||
| Elastic modulus |
GPa |
Mechanical measurement |
210 |
|||
| Dislocation density |
/cm2 |
TEM and XRD |
≤1 x 108 |
|||
| Sheet carrier density |
/cm2 |
SIMS |
N/A |
|||
| Sheet resistance/Resistivity |
ohm-cm |
<0.05(Undoped) |
||||
| <0.05(N type) |
||||||
| <1(P type) |
||||||
| >106(Semi insulating) |
||||||
| Doping concentration |
/cm3 |
SIMS |
~1019(N type) |
|||
| ~1017(P type) |
||||||
| Thickness(epilayer) |
um |
Ellipsometry |
3-100(N type,undoped) |
|||
| 5-100(P type) |
||||||
| 20-90(Semi insulating) |
||||||
| Buffer layer(sapphire) thickness |
um |
Ellipsometry |
430 |
|||
| Misorientation |
deg |
SEM and TEM |
On demand |
|||
| Macro defect density |
/cm2 |
TEM and XRD |
<10 |
|||
| Bow |
um |
SEM or AFM |
10-500 |
|||
| Total thickness variation (TTV) |
um |
AFM(prefered)and SEM |
<10 |
|||
| Surface roughness |
nm |
Profilometer and AFM |
Ra<0.2;RMS<0.5(epi ready) |
|||
| Thermal expansion coeff(300K) |
/K |
Thermal elaastic measurement |
along a0:5.59x10-6; along c0:7.75x10-6 |
|||
| Dielectric constant(300K) |
Ellipsometry |
along a0:10.4; along c0:9.5 |
||||
| Refractive index |
Ellipsometry |
2.67 at 3.38eV |
||||
| Electron Effective mass |
0.22 |
|||||
| FWHM of(102)XRD arcsec |
X-ray diffraction |
<300 |