Revision as of 19:04, 12 October 2013

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Figures of Merit for GaN substrates

Bulk Type	Property	Units	Characterization Method	Industry range
GaN freestanding substrate	Bandgap(300K)	eV	PL	3.44
	Electron mobility	cm²/V s	Hall effect sensor	150(300K)
	Hole mobility	cm²/V s	Hall effect sensor	13(300K)
	Melting point	K	Thermal couple	2573
	Lattice constants	nm	X-ray diffraction	a=0.319;c=0.518
	Thermal conductivity(300K)	W/cm K	Time-domain thermoreflectance	2.2-2.5
	Heat capacity	J/mol K	Constant presure heating	35.3
	Elastic modulus	GPa	Mechanical measurement	210
	Dislocation density	/cm²	TEM and XRD	≤5 x 10⁶
	Sheet carrier density	/cm²	SIMS	N/A
	Sheet resistance/Resistivity	ohm-cm		0.1-1(Undoped)
				<0.01(N type)
				>10⁶(Semi insulating)
	Doping concentration	/cm³	SIMS	~10¹⁹(N type)
	Doping concentration	/cm³	SIMS	N/A(P type)
	Thickness	um	Ellipsometry	200-475(N type)
	Thickness	um	Ellipsometry	475(Semi insulating)
	Misorientation	deg	SEM and TEM	On demand
	Macro defect density	/cm²	TEM and XRD	A grade<=2; B grade>2
	Bow	um	SEM or AFM	<5
	Total thickness variation (TTV)	um	AFM(preferred) and SEM	<10
	Surface roughness	nm	Profilometer and AFM	Ra<0.2;RMS<0.5(epi ready)
	Thermal expansion coeff(300K)	/K	Thermal elastic measurement	along a0:5.59x10^-6; along c0:7.75x10^-6
	Dielectric constant(300K)		Ellipsometry	along a0:10.4; along c0:9.5
	Refractive index		Ellipsometry	2.67 at 3.38eV
	Electron Effective mass			0.22
GaN template on sapphire	Bandgap(300K)	eV	PL	3.44
	Electron mobility	cm²/V s	Hall effect sensor	150(300K)
	Hole mobility	cm²/V s	Hall effect sensor	13(300K)
	Melting point	K	Thermal couple	2573
	Lattice constants	nm	X-ray diffraction	a=0.319;c=0.518
	Thermal conductivity(300K)	W/cm K	Time-domain thermoreflectance	2.3(semi insulating); 1.7(HVPE material,n=1x10¹⁷)
	Heat capacity	J/mol K	Constant presure heating	35.3
	Elastic modulus	GPa	Mechanical measurement	210
	Dislocation density	/cm²	TEM and XRD	≤1 x 10⁸
	Sheet carrier density	/cm²	SIMS	N/A
	Sheet resistance/Resistivity	ohm-cm		<0.05(Undoped)
				<0.05(N type)
				<1(P type)
				>10⁶(Semi insulating)
	Doping concentration	/cm³	SIMS	~10¹⁹(N type)
	Doping concentration	/cm³	SIMS	~10¹⁷(P type)
	Thickness(epilayer)	um	Ellipsometry	3-100(N type,undoped)
				5-100(P type)
				20-90(Semi insulating)
	Misorientation	deg	SEM and TEM	On demand
	Macro defect density	/cm²	TEM and XRD	<10
	Bow	um	SEM or AFM	10-500
	Total thickness variation (TTV)	um	AFM(prefered)and SEM	<10
	Surface roughness	nm	Profilometer and AFM	Ra<0.2;RMS<0.5(epi ready)
	Thermal expansion coeff(300K)	/K	Thermal elaastic measurement	along a0:5.59x10^-6; along c0:7.75x10^-6
	Dielectric constant(300K)		Ellipsometry	along a0:10.4; along c0:9.5
	Refractive index		Ellipsometry	2.67 at 3.38eV
	Electron Effective mass			0.22
	FWHM of(102)XRD arcsec		X-ray diffraction	<300

@@ Line 24: / Line 24: @@
 | Electron mobility<br />
 | cm<sup>2</sup>/V s<br />
-| Hall effect<br />
+| Hall effect sensor<br />
 | 150(300K)<br />
 | <br />
@@ Line 31: / Line 31: @@
 | Hole mobility<br />
 | cm<sup>2</sup>/V s<br />
-| Hall effect<br />
+| Hall effect sensor<br />
 | 13(300K)<br />
 | <br />
@@ Line 38: / Line 38: @@
 | Melting point<br />
 | K<br />
-| thermal couple<br />
+| Thermal couple<br />
 | 2573<br />
 | <br />
@@ Line 59: / Line 59: @@
 | Heat capacity<br />
 | J/mol K<br />
-| constant presure heating<br />
+| Constant presure heating<br />
 | 35.3<br />
 | <br />
@@ Line 191: / Line 191: @@
 | Electron mobility<br />
 | cm<sup>2</sup>/V s<br />
-| <br />
+| Hall effect sensor<br />
 | 150(300K)<br />
 | <br />
@@ Line 198: / Line 198: @@
 | Hole mobility<br />
 | cm<sup>2</sup>/V s<br />
-| <br />
+| Hall effect sensor<br />
 | 13(300K)<br />
 | <br />
@@ Line 205: / Line 205: @@
 | Melting point<br />
 | K<br />
-| thermal couple<br />
+| Thermal couple<br />
 | 2573<br />
 | <br />
@@ Line 219: / Line 219: @@
 | Thermal conductivity(300K)<br />
 | W/cm K<br />
-| <br />
+| Time-domain thermoreflectance<br />
 | 2.3(semi insulating); 1.7(HVPE material,n=1x10<sup>17</sup>)<br />
 | <br />
@@ Line 226: / Line 226: @@
 | Heat capacity<br />
 | J/mol K<br />
-| <br />
+| Constant presure heating<br />
 | 35.3<br />
 | <br />
@@ Line 233: / Line 233: @@
 | Elastic modulus<br />
 | GPa<br />
-| <br />
+| Mechanical measurement<br />
 | 210<br />
 | <br />
@@ Line 240: / Line 240: @@
 | Dislocation density<br />
 | /cm<sup>2</sup><br />
-| <br />
+| TEM and XRD<br />
 | ≤1 x 10<sup>8</sup><br />
 | <br />
@@ Line 247: / Line 247: @@
 | Sheet carrier density<br />
 | /cm<sup>2</sup><br />
-| <br />
+| SIMS<br />
 | N/A<br />
 | <br />
@@ Line 270: / Line 270: @@
 | rowspan="2"| Doping concentration<br />
 | rowspan="2"| /cm<sup>3</sup><br />
-| rowspan="2"| <br />
+| rowspan="2"| SIMS<br />
 | ~10<sup>19</sup>(N type)<br />
 |<br />
@@ Line 293: / Line 293: @@
 | Misorientation<br />
 | deg<br />
-| <br />
+| SEM and TEM<br />
 | On demand<br />
 | <br />
@@ Line 300: / Line 300: @@
 | Macro defect density<br />
 | /cm<sup>2</sup><br />
-| <br />
+| TEM and XRD<br />
 | <10<br />
 | <br />
@@ Line 307: / Line 307: @@
 | Bow<br />
 | um<br />
-| <br />
+| SEM or AFM<br />
 | 10-500<br />
 | <br />
@@ Line 314: / Line 314: @@
 | Total thickness variation (TTV)<br />
 | um<br />
-| <br />
+| AFM(prefered)and SEM<br />
 | <10<br />
 | <br />
@@ Line 321: / Line 321: @@
 | Surface roughness<br />
 | nm<br />
-| Profilometer<br />
+| Profilometer and AFM<br />
 | Ra<0.2;RMS<0.5(epi ready)<br />
 | <br />
@@ Line 328: / Line 328: @@
 | Thermal expansion coeff(300K)<br />
 | /K<br />
-| <br />
+| Thermal elaastic measurement<br />
 | along a0:5.59x10<sup>-6</sup>; along c0:7.75x10<sup>-6</sup><br />
 | <br />

Figures of merit for GaN substrates: Difference between revisions

Revision as of 19:04, 12 October 2013

This Page is Under Construction

Figures of Merit for GaN substrates