Line 14: Line 14:
! Reference/hyperlink
! Reference/hyperlink
|-
|-
| rowspan="22"| GaN Freestanding Substrate
| rowspan="26"| GaN freestanding substrate
| Bandgap<br />
| Bandgap(300K)<br />
| eV<br />
| eV<br />
| PL<br />
| PL<br />
Line 25: Line 25:
| cm<sup>2</sup>/V s<br />
| cm<sup>2</sup>/V s<br />
| <br />
| <br />
| 1350(300K)<br />
| 150(300K)<br />
| <br />
| <br />
| <br />
| <br />
Line 50: Line 50:
| <br />
| <br />
|-
|-
| Thermal conductivity<br />
| Thermal conductivity(300K)<br />
| W/cm K<br />
| W/cm K<br />
| <br />
| <br />
| 2.1<br />
| 2.2-2.5<br />
| <br />
| <br />
| <br />
| <br />
Line 149: Line 149:
| nm<br />
| nm<br />
| Profilometer<br />
| Profilometer<br />
| Ra<0.2(epi ready)<br />
| Ra<0.2;RMS<0.5(epi ready)<br />
| <br />
| <br />
|-
| Thermal expansion coeff(300K)<br />
| /K<br />
| <br />
| along a0:5.59x10<sup>-6</sup>; along c0:7.75x10<sup>-6</sup><br />
| <br />
| <br />
|-
| Dielectric constant(300K)<br />
| <br />
| Ellipsometry<br />
| along a0:10.4; along c0:9.5<br />
| <br />
| <br />
|-
| Refractive index<br />
| <br />
| Ellipsometry<br />
| 2.67 at 3.38eV<br />
| <br />
| <br />
|-
| Electron Effective mass<br />
| <br />
| <br />
| 0.22<br />
| <br />
| <br />
|-
| rowspan="29"| GaN template on sapphire
| Bandgap(300K)<br />
| eV<br />
| PL<br />
| 3.44<br />
| <br />
| <br />
|-
| Electron mobility<br />
| cm<sup>2</sup>/V s<br />
| <br />
| 150(300K)<br />
| <br />
| <br />
|-
| Hole mobility<br />
| cm<sup>2</sup>/V s<br />
| <br />
| 13(300K)<br />
| <br />
| <br />
|-
| Melting point<br />
| K<br />
| thermal couple<br />
| 2573<br />
| <br />
| <br />
|-
| Lattice constants<br />
| nm<br />
| X-ray diffraction<br />
| a=0.319;c=0.518<br />
| <br />
| <br />
|-
| Thermal conductivity(300K)<br />
| W/cm K<br />
| <br />
| 2.3(semi insulating); 1.7(HVPE material,n=1x10<sup>17</sup>)<br />
| <br />
| <br />
|-
| Heat capacity<br />
| J/mol K<br />
| <br />
| 35.3<br />
| <br />
| <br />
|-
| Elastic modulus<br />
| GPa<br />
| <br />
| 210<br />
| <br />
| <br />
|-
| Dislocation density<br />
| /cm<sup>2</sup><br />
| <br />
| ≤1 x 10<sup>8</sup><br />
| <br />
| <br />
|-
| Sheet carrier density<br />
| /cm<sup>2</sup><br />
| <br />
| N/A<br />
| <br />
| <br />
|-
| rowspan="4"|Sheet resistance/Resistivity<br />
| rowspan="4"|ohm-cm<br />
| rowspan="4"|<br />
| <0.05(Undoped)<br />
| <br />
| rowspan="4"|<br />
|-
| <0.05(N type)<br />
| <br />
|-
| <1(P type)<br />
| <br />
|-
| >10<sup>6</sup>(Semi insulating)<br />
| <br />
|-
| rowspan="2"| Doping concentration<br />
| rowspan="2"| /cm<sup>3</sup><br />
| rowspan="2"| <br />
| ~10<sup>19</sup>(N type)<br />
|<br />
| rowspan="2"| <br />
|-
| ~10<sup>17</sup>(P type)<br />
| <br />
|-
| rowspan="3"|Thickness(epilayer)<br />
| rowspan="3"|um<br />
| rowspan="3"|Ellipsometry<br />
| 3-100(N type,undoped)<br />
| <br />
| rowspan="3"|<br />
|-
| 5-100(P type)<br />
| <br />
|-
| 20-90(Semi insulating)<br />
| <br />
|-
| Misorientation<br />
| deg<br />
| <br />
| On demand<br />
| <br />
| <br />
|-
| Macro defect density<br />
| /cm<sup>2</sup><br />
| <br />
| <10<br />
| <br />
| <br />
|-
| Bow<br />
| um<br />
| <br />
| 10-500<br />
| <br />
| <br />
|-
| Total thickness variation (TTV)<br />
| um<br />
| <br />
| <10<br />
| <br />
| <br />
|-
| Surface roughness<br />
| nm<br />
| Profilometer<br />
| Ra<0.2;RMS<0.5(epi ready)<br />
| <br />
| <br />
|-
| Thermal expansion coeff(300K)<br />
| /K<br />
| <br />
| along a0:5.59x10<sup>-6</sup>; along c0:7.75x10<sup>-6</sup><br />
| <br />
| <br />
|-
| Dielectric constant(300K)<br />
| <br />
| Ellipsometry<br />
| along a0:10.4; along c0:9.5<br />
| <br />
| <br />
|-
| Refractive index<br />
| <br />
| Ellipsometry<br />
| 2.67 at 3.38eV<br />
| <br />
| <br />
|-
| Electron Effective mass<br />
| <br />
| <br />
| 0.22<br />
| <br />
| <br />
|-
| FWHM of(102)XRD arcsec<br />
| <br />
| X-ray diffraction<br />
| <300<br />
| <br />
| <br />
| <br />
| <br />

Revision as of 21:23, 11 October 2013

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Figures of Merit for GaN substrates

Bulk Type Property Units Characterization Method Industry range Goal Reference/hyperlink
GaN freestanding substrate Bandgap(300K)
 eV
 PL
 3.44

Electron mobility
 cm2/V s
150(300K)

Hole mobility
 cm2/V s
13(300K)

Melting point
 K
 thermal couple
 2573

Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518

Thermal conductivity(300K)
 W/cm K
2.2-2.5

Heat capacity
 J/mol K
35.3

Elastic modulus
 GPa
210

Dislocation density
 /cm2
≤5 x 106

Sheet carrier density
 /cm2
N/A

Sheet resistance/Resistivity
 ohm-cm
0.1-1(Undoped)

<0.01(N type)
>106(Semi insulating)
Doping concentration
 /cm3
~1019(N type)

N/A(P type)
Thickness
 um
 Ellipsometry
 200-475(N type)

475(Semi insulating)
Misorientation
 deg
On demand

Macro defect density
 /cm2
A grade<=2; B grade>2

Bow
 um
<5

Total thickness variation (TTV)
 um
<10

Surface roughness
 nm
 Profilometer
 Ra<0.2;RMS<0.5(epi ready)

Thermal expansion coeff(300K)
 /K
along a0:5.59x10-6; along c0:7.75x10-6

Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5

Refractive index
Ellipsometry
 2.67 at 3.38eV

Electron Effective mass

0.22

GaN template on sapphire Bandgap(300K)
 eV
 PL
 3.44

Electron mobility
 cm2/V s
150(300K)

Hole mobility
 cm2/V s
13(300K)

Melting point
 K
 thermal couple
 2573

Lattice constants
 nm
 X-ray diffraction
 a=0.319;c=0.518

Thermal conductivity(300K)
 W/cm K
2.3(semi insulating); 1.7(HVPE material,n=1x1017)

Heat capacity
 J/mol K
35.3

Elastic modulus
 GPa
210

Dislocation density
 /cm2
≤1 x 108

Sheet carrier density
 /cm2
N/A

Sheet resistance/Resistivity
 ohm-cm
<0.05(Undoped)

<0.05(N type)
<1(P type)
>106(Semi insulating)
Doping concentration
 /cm3
~1019(N type)

~1017(P type)
Thickness(epilayer)
 um
 Ellipsometry
 3-100(N type,undoped)

5-100(P type)
20-90(Semi insulating)
Misorientation
 deg
On demand

Macro defect density
 /cm2
<10

Bow
 um
10-500

Total thickness variation (TTV)
 um
<10

Surface roughness
 nm
 Profilometer
 Ra<0.2;RMS<0.5(epi ready)

Thermal expansion coeff(300K)
 /K
along a0:5.59x10-6; along c0:7.75x10-6

Dielectric constant(300K)
Ellipsometry
 along a0:10.4; along c0:9.5

Refractive index
Ellipsometry
 2.67 at 3.38eV

Electron Effective mass

0.22

FWHM of(102)XRD arcsec
X-ray diffraction
 <300

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