| Line 81: | Line 81: | ||
| /cm<sup>2</sup><br /> | | /cm<sup>2</sup><br /> | ||
| <br /> | | <br /> | ||
| | | N/A<br /> | ||
| <br /> | | <br /> | ||
| <br /> | | <br /> | ||
| Line 110: | Line 110: | ||
| rowspan="2"|Thickness<br /> | | rowspan="2"|Thickness<br /> | ||
| rowspan="2"|um<br /> | | rowspan="2"|um<br /> | ||
| rowspan="2"|<br /> | | rowspan="2"|Ellipsometry<br /> | ||
| 200-475(N type)<br /> | | 200-475(N type)<br /> | ||
| <br /> | | <br /> | ||
| Line 146: | Line 146: | ||
| <br /> | | <br /> | ||
|- | |- | ||
| | | Surface roughness<br /> | ||
| nm<br /> | | nm<br /> | ||
| <br /> | | <br /> | ||
| | | Ra<0.2(epi ready)<br /> | ||
| <br /> | | <br /> | ||
| <br /> | | <br /> | ||
Revision as of 18:46, 11 October 2013
This Page is Under Construction
Figures of Merit for GaN substrates
| Bulk Type | Property | Units | Characterization Method | Industry range | Goal | Reference/hyperlink |
|---|---|---|---|---|---|---|
| GaN Freestanding Substrate | Bandgap |
eV |
PL |
3.44 |
||
| Electron mobility |
cm2/V s |
1350(300K) |
||||
| Hole mobility |
cm2/V s |
13(300K) |
||||
| Melting point |
K |
thermal couple |
2573 |
|||
| Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518 |
|||
| Thermal conductivity |
W/cm K |
2.1 |
||||
| Heat capacity |
J/mol K |
35.3 |
||||
| Elastic modulus |
GPa |
210 |
||||
| Dislocation density |
/cm2 |
≤5 x 106 |
||||
| Sheet carrier density |
/cm2 |
N/A |
||||
| Sheet resistance/Resistivity |
ohm-cm |
0.1-1(Undoped) |
||||
| <0.01(N type) |
||||||
| >106(Semi insulating) |
||||||
| Doping concentration |
/cm3 |
~1019(N type) |
||||
| N/A(P type) |
||||||
| Thickness |
um |
Ellipsometry |
200-475(N type) |
|||
| 475(Semi insulating) |
||||||
| Misorientation |
deg |
On demand |
||||
| Macro defect density |
/cm2 |
A grade<=2; B grade>2 |
||||
| Bow |
um |
<5 |
||||
| Total thickness variation (TTV) |
um |
<10 |
||||
| Surface roughness |
nm |
Ra<0.2(epi ready) |