| Line 101: | Line 101: | ||
| rowspan="2"| /cm<sup>3</sup><br /> | | rowspan="2"| /cm<sup>3</sup><br /> | ||
| rowspan="2"| <br /> | | rowspan="2"| <br /> | ||
| (N type)<br /> | | ~10<sup>19</sup>(N type)<br /> | ||
|<br /> | |<br /> | ||
| rowspan="2"| <br /> | | rowspan="2"| <br /> | ||
|- | |- | ||
| (P type)<br /> | | N/A(P type)<br /> | ||
| <br /> | | <br /> | ||
|- | |- | ||
| Line 111: | Line 111: | ||
| rowspan="2"|um<br /> | | rowspan="2"|um<br /> | ||
| rowspan="2"|<br /> | | rowspan="2"|<br /> | ||
| (N type)<br /> | | 200-475(N type)<br /> | ||
| <br /> | | <br /> | ||
| rowspan="2"|<br /> | | rowspan="2"|<br /> | ||
|- | |- | ||
| (Semi insulating)<br /> | | 475(Semi insulating)<br /> | ||
| <br /> | | <br /> | ||
|- | |- | ||
| Line 121: | Line 121: | ||
| deg<br /> | | deg<br /> | ||
| <br /> | | <br /> | ||
| | | On demand<br /> | ||
| <br /> | | <br /> | ||
| <br /> | | <br /> | ||
| Line 135: | Line 135: | ||
| um<br /> | | um<br /> | ||
| <br /> | | <br /> | ||
| | | <5<br /> | ||
| <br /> | | <br /> | ||
| <br /> | | <br /> | ||
| Line 142: | Line 142: | ||
| um<br /> | | um<br /> | ||
| <br /> | | <br /> | ||
| | | <10<br /> | ||
| <br /> | | <br /> | ||
| <br /> | | <br /> | ||
Revision as of 17:00, 11 October 2013
This Page is Under Construction
Figures of Merit for GaN substrates
| Bulk Type | Property | Units | Characterization Method | Industry range | Goal | Reference/hyperlink |
|---|---|---|---|---|---|---|
| GaN Freestanding Substrate | Bandgap |
eV |
PL |
3.44 |
||
| Electron mobility |
cm2/V s |
1350(300K) |
||||
| Hole mobility |
cm2/V s |
13(300K) |
||||
| Melting point |
K |
thermal couple |
2573 |
|||
| Lattice constants |
nm |
X-ray diffraction |
a=0.319;c=0.518 |
|||
| Thermal conductivity |
W/cm K |
2.1 |
||||
| Heat capacity |
J/mol K |
35.3 |
||||
| Elastic modulus |
GPa |
210 |
||||
| Dislocation density |
/cm2 |
≤5 x 106 |
||||
| Sheet carrier density |
/cm2 |
NA |
||||
| Sheet resistance/Resistivity |
ohm-cm |
0.1-1(Undoped) |
||||
| <0.01(N type) |
||||||
| >106(Semi insulating) |
||||||
| Doping concentration |
/cm3 |
~1019(N type) |
||||
| N/A(P type) |
||||||
| Thickness |
um |
200-475(N type) |
||||
| 475(Semi insulating) |
||||||
| Misorientation |
deg |
On demand |
||||
| Macro defect density |
/cm2 |
A grade<=2; B grade>2 |
||||
| Bow |
um |
<5 |
||||
| Total thickness variation (TTV) |
um |
<10 |
||||
| RMS roughness |
nm |
210 |