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* ''ALD technique can be used to directly passivate surface with random morphology with atomic scaled dense layer, which could be beneficial for DSC fabrication by reducing interfacial recombination and improving the host chemical stability.''
* ''ALD technique can be used to directly passivate surface with random morphology with atomic scaled dense layer, which could be beneficial for DSC fabrication by reducing interfacial recombination and improving the host chemical stability.''
* ''SE are used to confirm the uniformity of the deposition throughout the reactor.''
* ''SE are used to confirm the uniformity of the deposition throughout the reactor.''
====[http://www.sciencemag.org/content/335/6073/1205 Coking- and Sintering-Resistant Palladium Catalysts Achieved Through Atomic Layer Deposition<ref name="Lu">Lu, Junling, Baosong Fu, Mayfair C. Kung, Guomin Xiao, Jeffrey W. Elam, Harold H. Kung, and Peter C. Stair. “Coking- and Sintering-Resistant Palladium Catalysts Achieved Through Atomic Layer Deposition.” Science 335, no. 6073 (March 9, 2012): 1205–1208.</ref>]====
====[http://www.nature.com/nmat/journal/v10/n7/full/nmat3047.html Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation<ref name="Chen">Chen, Yi Wei, Jonathan D. Prange, Simon Dühnen, Yohan Park, Marika Gunji, Christopher E. D. Chidsey, and Paul C. McIntyre. “Atomic Layer-deposited Tunnel Oxide Stabilizes Silicon Photoanodes for Water Oxidation.” Nature Materials 10, no. 7 (2011): 539–544.</ref>]====
====[http://www.nature.com/nnano/journal/v5/n7/full/nnano.2010.101.html Mimicking the colourful wing scale structure of the Papilio blumei butterfly<ref name="Kolle">Kolle, Mathias, Pedro M. Salgard-Cunha, Maik R. J. Scherer, Fumin Huang, Pete Vukusic, Sumeet Mahajan, Jeremy J. Baumberg, and Ullrich Steiner. “Mimicking the Colourful Wing Scale Structure of the Papilio Blumei Butterfly.” Nature Nanotechnology 5, no. 7 (2010): 511–515.</ref>]====
====[http://www.nature.com/nmat/journal/v2/n11/full/nmat1000.html Atomic layer deposition of transition metals<ref name="Lim">Lim, Booyong S., Antti Rahtu, and Roy G. Gordon. “Atomic Layer Deposition of Transition Metals.” Nature Materials 2, no. 11 (2003): 749–754.</ref>]====
====[http://www.sciencedirect.com/science/article/pii/S0040609002004388 Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates<ref name="Groner">Groner, M.D., J.W. Elam, F.H. Fabreguette, and S.M. George. “Electrical Characterization of Thin Al2O3 Films Grown by Atomic Layer Deposition on Silicon and Various Metal Substrates.” Thin Solid Films 413, no. 1–2 (June 24, 2002): 186–197.</ref>]====
====[http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=1&SID=3EG2oN4m7EpK6k@8Bfk&page=1&doc=2&cacheurlFromRightClick=no Improved Functionality of Lithium-Ion Batteries Enabled by Atomic Layer  Deposition on the Porous Microstructure of Polymer Separators and  Coating Electrodes<ref name="Jung">Jung, Yoon Seok, Andrew S. Cavanagh, Lynn Gedvilas, Nicodemus E. Widjonarko, Isaac D. Scott, Se-Hee Lee, Gi-Heon Kim, Steven M. George, and Anne C. Dillon. “Improved Functionality of Lithium-Ion Batteries Enabled by Atomic Layer  Deposition on the Porous Microstructure of Polymer Separators and  Coating Electrodes.” Advanced Energy Materials 2, no. 8 (August 2012): 1022–1027.</ref>]====
====[http://dx.doi.org/10.1021/ja054685k Ab Initio Calculations of the Reaction Mechanisms for Metal−Nitride Deposition from Organo-Metallic Precursors onto Functionalized Self-Assembled Monolayers<ref name="Haran">Haran, Mohit, James R. Engstrom, and Paulette Clancy. “Ab Initio Calculations of the Reaction Mechanisms for Metal−Nitride Deposition from Organo-Metallic Precursors onto Functionalized Self-Assembled Monolayers.” Journal of the American Chemical Society 128, no. 3 (January 1, 2006): 836–847.</ref>]====
====[http://dx.doi.org/10.1021/ja8090388 Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium<ref name="Pore">Pore, Viljami, Timo Hatanpää, Mikko Ritala, and Markku Leskelä. “Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium.” Journal of the American Chemical Society 131, no. 10 (March 18, 2009): 3478–3480.</ref>]====
====[http://dx.doi.org/10.1021/ja803471g Blocking the Lateral Film Growth at the Nanoscale in Area-Selective Atomic Layer Deposition<ref name="Ras">Ras, Robin H. A., Elina Sahramo, Jari Malm, Janne Raula, and Maarit Karppinen. “Blocking the Lateral Film Growth at the Nanoscale in Area-Selective Atomic Layer Deposition.” Journal of the American Chemical Society 130, no. 34 (August 1, 2008): 11252–11253.</ref>]====
====[http://dx.doi.org/10.1021/ja909102j Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition<ref name="Milanov">Milanov, Andrian P., Ke Xu, Apurba Laha, Eberhard Bugiel, Ramadurai Ranjith, Dominik Schwendt, H. Jörg Osten, Harish Parala, Roland A. Fischer, and Anjana Devi. “Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition.” Journal of the American Chemical Society 132, no. 1 (January 13, 2010): 36–37.</ref>]====
====[http://dx.doi.org/10.1021/ja109398t Growth of Ge Nanofilms Using Electrochemical Atomic Layer Deposition, with a “Bait and Switch” Surface-Limited Reaction<ref name="Liang">Liang, Xuehai, Qinghui Zhang, Marcus D. Lay, and John L. Stickney. “Growth of Ge Nanofilms Using Electrochemical Atomic Layer Deposition, with a ‘Bait and Switch’ Surface-Limited Reaction.” Journal of the American Chemical Society 133, no. 21 (June 1, 2011): 8199–8204.</ref>]====
====[http://dx.doi.org/10.1021/ja1025112 Coaxial Heterogeneous Structure of TiO2 Nanotube Arrays with CdS as a Superthin Coating Synthesized via Modified Electrochemical Atomic Layer Deposition<ref name="Zhu">Zhu, Wen, Xi Liu, Huiqiong Liu, Dali Tong, Junyou Yang, and Jiangying Peng. “Coaxial Heterogeneous Structure of TiO2 Nanotube Arrays with CdS as a Superthin Coating Synthesized via Modified Electrochemical Atomic Layer Deposition.” Journal of the American Chemical Society 132, no. 36 (September 15, 2010): 12619–12626.</ref>]====
====[http://dx.doi.org/10.1021/ja8023059 Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene<ref name="Wang">Wang, Xinran, Scott M. Tabakman, and Hongjie Dai. “Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene.” Journal of the American Chemical Society 130, no. 26 (July 1, 2008): 8152–8153.</ref>]====
====[http://www.sciencedirect.com/science/article/pii/S0040609001016789 Thin film atomic layer deposition equipment for semiconductor processing<ref name="Sneh">Sneh, Ofer, Robert B Clark-Phelps, Ana R Londergan, Jereld Winkler, and Thomas E Seidel. “Thin Film Atomic Layer Deposition Equipment for Semiconductor Processing.” Thin Solid Films 402, no. 1–2 (January 1, 2002): 248–261.</ref>]====
====[http://www.sciencedirect.com/science/article/pii/S0925838810007267 Chemical vapour deposition and atomic layer deposition of amorphous and nanocrystalline metallic coatings: Towards deposition of multimetallic films<ref name="Blanquet">Blanquet, Elisabeth, Arnaud Mantoux, Michel Pons, and Constantin Vahlas. “Chemical Vapour Deposition and Atomic Layer Deposition of Amorphous and Nanocrystalline Metallic Coatings: Towards Deposition of Multimetallic Films.” Journal of Alloys and Compounds 504, Supplement 1, no. 0 (August 2010): S422–S424.</ref>]====
====[http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5042640&abstractAccess=no&userType=inst Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process<ref name="Puurunen">Puurunen, Riikka L. “Surface Chemistry of Atomic Layer Deposition: A Case Study for the Trimethylaluminum/water Process.” Journal of Applied Physics 97, no. 12 (June 2005): 121301 –121301–52.</ref>]====
====[http://www.sciencedirect.com/science/article/pii/S0169433210018271 Formation of strontium template on Si(1 0 0) by atomic layer deposition<ref name="Zhang">Zhang, C.B., L. Wielunski, and B.G. Willis. “Formation of Strontium Template on Si(1 0 0) by Atomic Layer Deposition.” Applied Surface Science 257, no. 11 (March 15, 2011): 4826–4830.</ref>]====
====[http://www.sciencedirect.com/science/article/pii/S004060900600736X Atomic layer deposition of palladium films on Al2O3 surfaces<ref name="Elam">Elam, J.W., A. Zinovev, C.Y. Han, H.H. Wang, U. Welp, J.N. Hryn, and M.J. Pellin. “Atomic Layer Deposition of Palladium Films on Al2O3 Surfaces.” Thin Solid Films 515, no. 4 (December 5, 2006): 1664–1673.</ref>]====
====[http://www.sciencedirect.com/science/article/pii/S0167931710004077 Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates<ref name="Lamagna">Lamagna, L., M. Fusi, S. Spiga, M. Fanciulli, G. Brammertz, C. Merckling, M. Meuris, and A. Molle. “Effects of Surface Passivation During Atomic Layer Deposition of Al2O3 on In0.53Ga0.47As Substrates.” Microelectronic Engineering 88, no. 4 (April 2011): 431–434.</ref>]====


===references===
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This page describes selected literature available on atomic layer deposition.

Applications of atomic layer deposition to nanofabrication and emerging nanodevices[1]

Abstract: Recently, with scaling down of semiconductor devices, need for nanotechnology has increased enormously. For nanoscale devices especially, each of the layers should be as thin and as perfect as possible. Thus, the application of atomic layer deposition (ALD) to nanofabrication strategies and emerging nanodevices has sparked a good deal of interest due to its inherent benefits compared to other thin film deposition techniques. Since the ALD process is intrinsically atomic in nature and results in the controlled deposition of films at the atomic scale, ALD produces layers with nanometer scale thickness control and excellent conformality. In this report, we review current research trends in ALD processes, focusing on the application of ALD to emerging nanodevices utilizing fabrication through nanotechnology.

  • Atomic layer deposition consists of four essential steps: 1)precursor exposure, 2) evacuation or purging of the precursors and any byproducts from the chamber, 3) exposure of the reactant species, typically oxidants or reagents, and 4) evacuation or purging of the reactants and byproduct molecules from the chamber .
  • A clear and distinctive feature of ALD lies in the self-limitation for precursor adsorption and alternate, sequential exposure of precursors and reactants
  • A challenge of deposition on nanoscale three-diamension surface is that while saturated adsorption is achieved on the flat surface at a given amount of precursor exposure, incomplete saturation reaction may occur deep inside of nanosize holes or vias, leading to poor overall conformality
  • The required exposure to achieve good saturation can be controlled by varying exposure time or working pressure. Higher pressure during precursor exposure was shown to enhance precursor adsorption on the inside surface of the pores, resulting in the reduction of exposure time for saturation.
  • Some materials, particularly metal ALD material, may yield islands during ALD process, which affects the growth rate, resulting in a non-linear increase in film thickness vs. growth cycles, and makes it difficult to obtain atomically smooth surfaces
  • Another important characteristic of ALD is the ability to deposit relatively high quality films at low temperature, that gives opportunities to material with low evaporation temperature, like InN.( low compared to CVD even at low temperature).
  • Another advantage is that ALD can be performed on polymer substrates with nucleation site. TMA molecules into the pores of polymers was found to facilitate the nucleation of ALD Al2O3.
  • Method: fluid bed reactor can be used for nanoparticle ALD.
  • ALD processes the advantage of biomtemplating from existing materials such as bacteria, butterfly wings, spider silk, etc. due to its high conformality and low growth temperature.
  • High aspect ratio AAO with ALD perform as templates for complex nanomorphology fabrication, particular the nanoarrays, nanotube and nanorods.

Atomic Layer Deposition: An Overview[2]

Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells[3]

Abstract: Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al2O3, ZnO, SnO2, Nb2O5, HfO2, Ga2O3 and TiO2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy.

  • Author(s) proposed a completely novel 3D host-passivation-guest structure using self-assembly and atomic layer deposition techniquies that enabled an increase of more than 100mV in a liquid state DSC.
  • ALD technique can be used to directly passivate surface with random morphology with atomic scaled dense layer, which could be beneficial for DSC fabrication by reducing interfacial recombination and improving the host chemical stability.
  • SE are used to confirm the uniformity of the deposition throughout the reactor.

Coking- and Sintering-Resistant Palladium Catalysts Achieved Through Atomic Layer Deposition[4]

Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation[5]

Mimicking the colourful wing scale structure of the Papilio blumei butterfly[6]

Atomic layer deposition of transition metals[7]

Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates[8]

Improved Functionality of Lithium-Ion Batteries Enabled by Atomic Layer Deposition on the Porous Microstructure of Polymer Separators and Coating Electrodes[9]

Ab Initio Calculations of the Reaction Mechanisms for Metal−Nitride Deposition from Organo-Metallic Precursors onto Functionalized Self-Assembled Monolayers[10]

Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium[11]

Blocking the Lateral Film Growth at the Nanoscale in Area-Selective Atomic Layer Deposition[12]

Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition[13]

Growth of Ge Nanofilms Using Electrochemical Atomic Layer Deposition, with a “Bait and Switch” Surface-Limited Reaction[14]

Coaxial Heterogeneous Structure of TiO2 Nanotube Arrays with CdS as a Superthin Coating Synthesized via Modified Electrochemical Atomic Layer Deposition[15]

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene[16]

Thin film atomic layer deposition equipment for semiconductor processing[17]

Chemical vapour deposition and atomic layer deposition of amorphous and nanocrystalline metallic coatings: Towards deposition of multimetallic films[18]

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process[19]

Formation of strontium template on Si(1 0 0) by atomic layer deposition[20]

Atomic layer deposition of palladium films on Al2O3 surfaces[21]

Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates[22]

references

  1. ↑ Kim, Hyungjun, Han-Bo-Ram Lee, and W.-J. Maeng. “Applications of Atomic Layer Deposition to Nanofabrication and Emerging Nanodevices.” Thin Solid Films 517, no. 8 (February 27, 2009): 2563–2580.
  2. ↑ George, Steven M. “Atomic Layer Deposition: An Overview.” Chemical Reviews 110, no. 1 (January 13, 2010): 111–131.
  3. ↑ Tétreault, Nicolas, L-P. Heiniger, M Stefik, P. L. Labouchère, Éric Arsenault, N. K. Nazeeruddin, G A. Ozin, and M. Grätzel. “(Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells.” 303–314, 2011.
  4. ↑ Lu, Junling, Baosong Fu, Mayfair C. Kung, Guomin Xiao, Jeffrey W. Elam, Harold H. Kung, and Peter C. Stair. “Coking- and Sintering-Resistant Palladium Catalysts Achieved Through Atomic Layer Deposition.” Science 335, no. 6073 (March 9, 2012): 1205–1208.
  5. ↑ Chen, Yi Wei, Jonathan D. Prange, Simon Dühnen, Yohan Park, Marika Gunji, Christopher E. D. Chidsey, and Paul C. McIntyre. “Atomic Layer-deposited Tunnel Oxide Stabilizes Silicon Photoanodes for Water Oxidation.” Nature Materials 10, no. 7 (2011): 539–544.
  6. ↑ Kolle, Mathias, Pedro M. Salgard-Cunha, Maik R. J. Scherer, Fumin Huang, Pete Vukusic, Sumeet Mahajan, Jeremy J. Baumberg, and Ullrich Steiner. “Mimicking the Colourful Wing Scale Structure of the Papilio Blumei Butterfly.” Nature Nanotechnology 5, no. 7 (2010): 511–515.
  7. ↑ Lim, Booyong S., Antti Rahtu, and Roy G. Gordon. “Atomic Layer Deposition of Transition Metals.” Nature Materials 2, no. 11 (2003): 749–754.
  8. ↑ Groner, M.D., J.W. Elam, F.H. Fabreguette, and S.M. George. “Electrical Characterization of Thin Al2O3 Films Grown by Atomic Layer Deposition on Silicon and Various Metal Substrates.” Thin Solid Films 413, no. 1–2 (June 24, 2002): 186–197.
  9. ↑ Jung, Yoon Seok, Andrew S. Cavanagh, Lynn Gedvilas, Nicodemus E. Widjonarko, Isaac D. Scott, Se-Hee Lee, Gi-Heon Kim, Steven M. George, and Anne C. Dillon. “Improved Functionality of Lithium-Ion Batteries Enabled by Atomic Layer Deposition on the Porous Microstructure of Polymer Separators and Coating Electrodes.” Advanced Energy Materials 2, no. 8 (August 2012): 1022–1027.
  10. ↑ Haran, Mohit, James R. Engstrom, and Paulette Clancy. “Ab Initio Calculations of the Reaction Mechanisms for Metal−Nitride Deposition from Organo-Metallic Precursors onto Functionalized Self-Assembled Monolayers.” Journal of the American Chemical Society 128, no. 3 (January 1, 2006): 836–847.
  11. ↑ Pore, Viljami, Timo Hatanpää, Mikko Ritala, and Markku Leskelä. “Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium.” Journal of the American Chemical Society 131, no. 10 (March 18, 2009): 3478–3480.
  12. ↑ Ras, Robin H. A., Elina Sahramo, Jari Malm, Janne Raula, and Maarit Karppinen. “Blocking the Lateral Film Growth at the Nanoscale in Area-Selective Atomic Layer Deposition.” Journal of the American Chemical Society 130, no. 34 (August 1, 2008): 11252–11253.
  13. ↑ Milanov, Andrian P., Ke Xu, Apurba Laha, Eberhard Bugiel, Ramadurai Ranjith, Dominik Schwendt, H. Jörg Osten, Harish Parala, Roland A. Fischer, and Anjana Devi. “Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition.” Journal of the American Chemical Society 132, no. 1 (January 13, 2010): 36–37.
  14. ↑ Liang, Xuehai, Qinghui Zhang, Marcus D. Lay, and John L. Stickney. “Growth of Ge Nanofilms Using Electrochemical Atomic Layer Deposition, with a ‘Bait and Switch’ Surface-Limited Reaction.” Journal of the American Chemical Society 133, no. 21 (June 1, 2011): 8199–8204.
  15. ↑ Zhu, Wen, Xi Liu, Huiqiong Liu, Dali Tong, Junyou Yang, and Jiangying Peng. “Coaxial Heterogeneous Structure of TiO2 Nanotube Arrays with CdS as a Superthin Coating Synthesized via Modified Electrochemical Atomic Layer Deposition.” Journal of the American Chemical Society 132, no. 36 (September 15, 2010): 12619–12626.
  16. ↑ Wang, Xinran, Scott M. Tabakman, and Hongjie Dai. “Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene.” Journal of the American Chemical Society 130, no. 26 (July 1, 2008): 8152–8153.
  17. ↑ Sneh, Ofer, Robert B Clark-Phelps, Ana R Londergan, Jereld Winkler, and Thomas E Seidel. “Thin Film Atomic Layer Deposition Equipment for Semiconductor Processing.” Thin Solid Films 402, no. 1–2 (January 1, 2002): 248–261.
  18. ↑ Blanquet, Elisabeth, Arnaud Mantoux, Michel Pons, and Constantin Vahlas. “Chemical Vapour Deposition and Atomic Layer Deposition of Amorphous and Nanocrystalline Metallic Coatings: Towards Deposition of Multimetallic Films.” Journal of Alloys and Compounds 504, Supplement 1, no. 0 (August 2010): S422–S424.
  19. ↑ Puurunen, Riikka L. “Surface Chemistry of Atomic Layer Deposition: A Case Study for the Trimethylaluminum/water Process.” Journal of Applied Physics 97, no. 12 (June 2005): 121301 –121301–52.
  20. ↑ Zhang, C.B., L. Wielunski, and B.G. Willis. “Formation of Strontium Template on Si(1 0 0) by Atomic Layer Deposition.” Applied Surface Science 257, no. 11 (March 15, 2011): 4826–4830.
  21. ↑ Elam, J.W., A. Zinovev, C.Y. Han, H.H. Wang, U. Welp, J.N. Hryn, and M.J. Pellin. “Atomic Layer Deposition of Palladium Films on Al2O3 Surfaces.” Thin Solid Films 515, no. 4 (December 5, 2006): 1664–1673.
  22. ↑ Lamagna, L., M. Fusi, S. Spiga, M. Fanciulli, G. Brammertz, C. Merckling, M. Meuris, and A. Molle. “Effects of Surface Passivation During Atomic Layer Deposition of Al2O3 on In0.53Ga0.47As Substrates.” Microelectronic Engineering 88, no. 4 (April 2011): 431–434.
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