Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. MOST uses ALD techniques to fabricate solar photovoltaic devices.
MOST ALD
- Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform.
MSDS
As received exposed to:
http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p6283d.ashx http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4662e.ashx http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4562i.ashx http://www.ozoneapplications.com/info/ozone_msds.htm