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'''Atomic layer deposition''' (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. [[MOST]] uses ALD techniques to fabricate solar [[photovoltaic]] devices. | '''Atomic layer deposition''' (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. [[MOST]] uses ALD techniques to fabricate solar [[photovoltaic]] devices. | ||
For more information on ALD http://www.aldpulse.com/ | |||
==MOST ALD== | ==MOST ALD== | ||
* Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform. | * Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform. | ||
==Other MTU researchers== | |||
* Dr. Kathryn A. Perrine http://chem.sites.mtu.edu/perrine/ | |||
==MSDS== | |||
As received exposed to: | |||
* http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p6283d.ashx | |||
* http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4662e.ashx | |||
* http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4562i.ashx | |||
* http://www.ozoneapplications.com/info/ozone_msds.htm | |||
==See also== | ==See also== | ||
* [[Atomic layer deposition literature review]] | * [[Atomic layer deposition literature review]] | ||
* [http://mcff.mtu.edu/mff/ MTU MFF] | * [http://mcff.mtu.edu/mff/ MTU MFF] | ||
Revision as of 16:47, 23 August 2016
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. MOST uses ALD techniques to fabricate solar photovoltaic devices.
For more information on ALD http://www.aldpulse.com/
MOST ALD
- Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform.
Other MTU researchers
- Dr. Kathryn A. Perrine http://chem.sites.mtu.edu/perrine/
MSDS
As received exposed to:
- http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p6283d.ashx
- http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4662e.ashx
- http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4562i.ashx
- http://www.ozoneapplications.com/info/ozone_msds.htm