J.M.Pearce (talk | contribs) mNo edit summary |
J.M.Pearce (talk | contribs) m (→MSDS) |
||
| Line 10: | Line 10: | ||
As received exposed to: | As received exposed to: | ||
http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p6283d.ashx | * http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p6283d.ashx | ||
http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4662e.ashx | * http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4662e.ashx | ||
http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4562i.ashx | * http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4562i.ashx | ||
http://www.ozoneapplications.com/info/ozone_msds.htm | * http://www.ozoneapplications.com/info/ozone_msds.htm | ||
==See also== | ==See also== | ||
* [[Atomic layer deposition literature review]] | * [[Atomic layer deposition literature review]] | ||
* [http://mcff.mtu.edu/mff/ MTU MFF] | * [http://mcff.mtu.edu/mff/ MTU MFF] | ||
Revision as of 19:49, 7 June 2013
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD reactions generally use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. Thus it is possible to deposit a very precise thin film by exposing the precursors to the growth surface repeatedly. MOST uses ALD techniques to fabricate solar photovoltaic devices.
MOST ALD
- Jusung / JEL Atomic Layer Deposition ALD Chamber 200mm. This chamber was removed from a Jusung Eureka 2000 system using a Brooks MX-700 Cluster Platform.
MSDS
As received exposed to:
- http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p6283d.ashx
- http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4662e.ashx
- http://www.praxair.com/~/media/North%20America/US/Documents/SDS/p4562i.ashx
- http://www.ozoneapplications.com/info/ozone_msds.htm