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*"storage box" AND particles AND cleanroom | *"storage box" AND particles AND cleanroom | ||
==Organic airborne contamination on Si wafers== | ==Organic airborne contamination on Si wafers (Toni)== | ||
===Walter Dena, Hsunling Bai, and Yuhao Kang, “[http://jes.ecsdl.org/content/153/2/G149.full Organic Airborne Molecular Contamination in Semiconductor Fabrication Clean Rooms | ===Walter Dena, Hsunling Bai, and Yuhao Kang, “[http://jes.ecsdl.org/content/153/2/G149.full Organic Airborne Molecular Contamination in Semiconductor Fabrication Clean Rooms | ||
Revision as of 09:40, 7 November 2017
Search Terms
- "storage box" AND particles AND cleanroom
Organic airborne contamination on Si wafers (Toni)
===Walter Dena, Hsunling Bai, and Yuhao Kang, “[http://jes.ecsdl.org/content/153/2/G149.full Organic Airborne Molecular Contamination in Semiconductor Fabrication Clean Rooms A Review]” Journal of The Electrochemical Society, 153(2), G149-G159, 2006.===
Yong-Jun Liu and Hua-Zhong Yu, “Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions” Journal of The Electrochemical Society, 150(12), G861-G865, 2003.
Hitoshi Habuka, Syuichi Ishiwari, Haruo Kato, Manabu Shimada, and Kikuo Okuyamad, “Airborne Organic Contamination Behavior on Silicon Wafer Surface” Journal of The Electrochemical Society, 150(2), G148-G154, 2003.
Syuichi Ishiwari, Haruo Kato, and Hitoshi Habuka, “Development of Evaluation Method for Organic Contamination on Silicon Wafer Surfaces” Journal of The Electrochemical Society, 148(11), G644-G648, 2001.
Hitoshi Habuka, Manabu Shimada and Kikuo Okuyama, “Adsorption and Desorption Rate of Multicomponent Organic Species on Silicon Wafer Surface” Journal of The Electrochemical Society, 148(7), G365-G369, 2001.
Fumitoshi Sugimoto and Sigeru Okamura, “Adsorption Behavior of Organic Contaminants on a Silicon Wafer Surface” Journal of The Electrochemical Society, 146(7), 2725-2729, 1999.
- The authors study behavior of organic contaminants absorbed onto Si wafer surface by solvent-dissolution GC-MS technique.
Experimental
- Wafers precleaned via RCA, wafers covered with native oxide
- Wafers expose to a conventional cleanroom for several hours and placed vertically on a quartz carrier
- Other wafers were sealed and stored for several days in two polypropylene boxes (commercially finished products): (i) not used prior the experiment (“new box”), (ii) box was left open in clean room for several months before the experiment (“used box”)
- Exposure time and storage time varied
- Characterization by GC-MS analysis:
- Organic contaminants collected by dissolving them in a solvent (pure acetone used: suitable for this kind of study, see details from the paper)
- Contaminants then studied from the solvent
Results
- Cleanroom air
- Organic contaminants found from a wafer exposed to clean room air for only 1 h
- Different contaminants are found after 24 h cleanroom air exposure than after 1 h exposure
- Contaminants with low boiling point were adsorbed immediately and decreased with exposure time; those with high bp increased with exposure time (does not apply for everything) => Organic contaminants having a low boiling point were replaced by those with higher boiling points
- New box
- No cleanroom airborne contaminants found but other contaminants resulting from the plastic additives: crosslinking agent (DAB), antioxidant (DBQ) and plasticizer (DBP)
- Used box
- Airborne contamination peaks found due to contamination already present in the box which was stored open beforehand. Nevertheless, the amount considerable smaller than on wafers stored in cleanroom air directly.
- In this case, the adsorption time did not depend on the boiling points of the contaminants but instead on their structure: Contaminants containing C=O or S=O groups were adsorbed immediately; those having -O- groups only after several days. This is due to different polarities of the molecules.
Koichiro Saga and Takeshi Hattori, “Identification and Removal of Trace Organic Contamination on Silicon Wafers Stored in Plastic Boxes” Journal of The Electrochemical Society, 143(10), 3279-3284, 1996.
K. J. Budde, W. J. Holzapfel, and M. M. Beyer , “Application of Ion Mobility Spectrometry to Semiconductor Technology: Outgassings of Advanced Polymers under Thermal Stress” Journal of The Electrochemical Society, 142(3), 888-897, 1995.
- Outgassing characteristics of PP, PC, PFA, PVDF, ABS and PTFE