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Line 9: − I will now outline and explain some [[gallium arsenide]]'s (GaAs) physical properties both on the macro and nano scale. −
→Gallium Arsenide
===Gallium Arsenide===
===Gallium Arsenide===
To start off with the basics gallium arsenide is composed of 2 base elements gallium and arsenic. When these two individual elements bind together, they form the aforementioned compound, which displays many interesting characteristics. Gallium arsenide is a [[semiconductor]] with a greater saturated electron velocity and [[electron mobility]] than that of silicon. A semiconductor is a material that has [[electrical conductivity]] between between an insulator and a conductor; it may vary its ability to conduct [[electricity]] when it is cool versus when it is hot. This makes it very useful in many applications. Another novel quality to gallium arsenide is that it has a [[direct band gap]]. This it a quality that denotes a compound that can emit light efficiently.
To start off with the basics gallium arsenide is composed of 2 base elements gallium and arsenic. When these two individual elements bind together, they form the aforementioned compound, which displays many interesting characteristics. Gallium arsenide is a [[semiconductor]] with a greater saturated electron velocity and [[electron mobility]] than that of silicon. A semiconductor is a material that has [[electrical conductivity]] between between an insulator and a conductor; it may vary its ability to conduct [[electricity]] when it is cool versus when it is hot. This makes it very useful in many applications. Another novel quality to gallium arsenide is that it has a [[direct band gap]]. This it a quality that denotes a compound that can emit light efficiently.