Changes

Jump to navigation Jump to search
Line 9: Line 9:     
===Gallium Arsenide===
 
===Gallium Arsenide===
I will now outline and explain some [[gallium arsenide]]'s (GaAs) physical properties both on the macro and nano scale.
  −
   
To start off with the basics gallium arsenide is composed of 2 base elements gallium and arsenic.  When these two individual elements bind together, they form the aforementioned compound, which displays many interesting characteristics.  Gallium arsenide is a [[semiconductor]] with a greater  saturated electron velocity and [[electron mobility]] than that of silicon.  A semiconductor is a material that has [[electrical conductivity]] between between an insulator and a conductor; it may vary its ability to conduct [[electricity]] when it is cool versus when it is hot.  This makes it very useful in many applications.  Another novel quality to gallium arsenide is that it has a [[direct band gap]].  This it a quality that denotes a compound that can emit light efficiently.     
 
To start off with the basics gallium arsenide is composed of 2 base elements gallium and arsenic.  When these two individual elements bind together, they form the aforementioned compound, which displays many interesting characteristics.  Gallium arsenide is a [[semiconductor]] with a greater  saturated electron velocity and [[electron mobility]] than that of silicon.  A semiconductor is a material that has [[electrical conductivity]] between between an insulator and a conductor; it may vary its ability to conduct [[electricity]] when it is cool versus when it is hot.  This makes it very useful in many applications.  Another novel quality to gallium arsenide is that it has a [[direct band gap]].  This it a quality that denotes a compound that can emit light efficiently.     
  

Navigation menu